| BF2040 |
|
Infineon Technologies
|
Silicon N-Channel MOSFET Tetrode in SOT-143 package. For low noise, high gain controlled input stages up to 1GHz. Operating voltage 5V, gfs=40mS. Partly integrated bias network. |
Original |
PDF
|
50.14KB |
5 |
| BF2040 |
|
Infineon Technologies
|
Single Semi Biased; Package: PG-SOT143-4; ID (max): 40.0 mA; Ptot (max): 200.0 mW; gfs (typ): 42.0 mS; Gp (typ): 23.0 dB; F (typ): 1.6 dB; |
Original |
PDF
|
205.35KB |
11 |
| BF 2040 |
|
Infineon Technologies
|
TRANS MOSFET N-CH 8V 0.02A 4SOT-143 |
Original |
PDF
|
102.93KB |
5 |
| BF2040 |
|
Siemens
|
RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
Original |
PDF
|
465.63KB |
37 |
| BF2040 |
|
Siemens
|
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Original |
PDF
|
15.53KB |
2 |
| BF 2040E6327 |
|
Infineon Technologies
|
TRANS MOSFET N-CH 8V 0.02A 4SOT-143 T/R |
Original |
PDF
|
102.93KB |
5 |
| BF2040E6814 |
|
Infineon Technologies
|
RF FETs, Discrete Semiconductor Products, MOSFET N-CH 8V 40MA SOT-143 |
Original |
PDF
|
|
11 |
| BF2040E6814HTSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH 8V 40MA SOT-143 |
Original |
PDF
|
205.44KB |
|
| BF2040R |
|
Infineon Technologies
|
integrated semi biasing network, VDS=5V, gfs=41mS, Gps=23dB, F=1.5dB |
Original |
PDF
|
111.31KB |
5 |
| BF2040R |
|
Infineon Technologies
|
TRANS MOSFET N-CH 8V 0.02A 4SOT-143R |
Original |
PDF
|
58.89KB |
5 |
| BF2040R |
|
Infineon Technologies
|
Single Semi Biased; Package: PG-SOT143-4; ID (max): 40.0 mA; Ptot (max): 200.0 mW; gfs (typ): 42.0 mS; Gp (typ): 23.0 dB; F (typ): 1.6 dB; |
Original |
PDF
|
205.35KB |
11 |
| BF2040RE6327 |
|
Infineon Technologies
|
TRANS MOSFET N-CH 8V 0.02A 4SOT-143R T/R |
Original |
PDF
|
58.89KB |
5 |
| BF2040RE6814 |
|
Infineon Technologies
|
RF FETs, Discrete Semiconductor Products, MOSFET N-CH 8V 40MA SOT-143R |
Original |
PDF
|
|
11 |
| BF2040RE6814HTSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH 8V 40MA SOT-143R |
Original |
PDF
|
205.44KB |
|
|
|
| BF2040W |
|
Infineon Technologies
|
Single Semi Biased; Package: PG-SOT343-4; ID (max): 40.0 mA; Ptot (max): 200.0 mW; gfs (typ): 42.0 mS; Gp (typ): 23.0 dB; F (typ): 1.6 dB; |
Original |
PDF
|
205.35KB |
11 |
| BF2040W |
|
Infineon Technologies
|
Silicon N-Channel MOSFET Tetrode in SOT-343 package. For low noise, high gain controlled input stages up to 1GHz. Operating voltage 5V, gfs=40mS. Partly integrated bias network. |
Original |
PDF
|
50.31KB |
5 |
| BF2040W |
|
Siemens
|
RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
Original |
PDF
|
465.63KB |
37 |
| BF2040W |
|
Siemens
|
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Original |
PDF
|
30.53KB |
2 |
| BF2040WE6814 |
|
Infineon Technologies
|
RF FETs, Discrete Semiconductor Products, MOSFET N-CH 8V 40MA SOT-343 |
Original |
PDF
|
|
11 |
| BF2040WE6814HTSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH 8V 40MA SOT-343 |
Original |
PDF
|
205.44KB |
|
