BF545B |
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NXP Semiconductors
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BF545 - TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal |
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Original |
PDF
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127.63KB |
16 |
BF545B |
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NXP Semiconductors
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N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 6 to 15 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.4 to7.5 V; VDSmax: 30 V; YFS: 3 to 6.5 ms |
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Original |
PDF
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63.34KB |
15 |
BF545B |
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Philips Semiconductors
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N-Channel Silicon Junction Field-Effect Transistor |
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Original |
PDF
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67.3KB |
12 |
BF545B |
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Philips Semiconductors
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N-Channel Silicon Junction Field Effect Transistor |
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Original |
PDF
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270.26KB |
11 |
BF545B |
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Philips Semiconductors
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N-Channel Silicon Junction Field Effect Transistor |
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Scan |
PDF
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288.2KB |
10 |
BF545B |
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Philips Semiconductors
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N-channel silicon junction field-effect transistor |
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Scan |
PDF
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269.02KB |
11 |
BF545B,215 |
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NXP Semiconductors
|
BF545 - TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal |
|
Original |
PDF
|
127.63KB |
16 |
BF545B,215 |
|
NXP Semiconductors
|
N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 6 to 15 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.4 to7.5 V; VDSmax: 30 V; YFS: 3 to 6.5 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd |
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Original |
PDF
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63.34KB |
15 |