BF821 Search Results

1Y SOT-23

Contextual Info: BF821, BF823 PNP Silicon Epitaxial Planar Transistors especially suited for application in class-B video output stages of TV receivers and monitors. A s complementary types, the NPN transistors BF820 and BF822 are recommended. Pin Configuration 1 = Collector, 2 = Base, 3 = Emitter.

Contextual Info: Philips Semiconductors Product specification PNP high-voltage transistors BF821 ; BF823 FEATURES PINNING • Low current max. 50 mA PIN • High voltage (max. 300 V). 1 base 2 emitter 3 collector APPLICATIONS DESCRIPTION • Telephony and professional communication equipment.

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Apr 23 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification PNP high-voltage transistors BF821 ; BF823 FEATURES PINNING • Low curren t max. 50 mA

transistors 10 KW

Abstract: BF821 BF823
Contextual Info: Transys Electronics L I M I T E D SOT-23 Formed SMD Package BF821 BF823 SILICON EPITAXIAL TRANSISTORS P–N–P transistors Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1

L7E transistor

Abstract: BF820 BF821 BF822 BF823
Contextual Info: • bb53^31 N AMER □□2M7DM 5T2 B A P X PHILIPS/DISCRETE L7E BF821 BF823 ]> SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature plastic envelope intended for application in thick and thin-film circuits. Primarily intended fo r use in telephony and professional communication equipment. N-P-N

Contextual Info: DISCRETE SEMICONDUCTORS DAT BF821; BF823 PNP high-voltage transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 16 NXP Semiconductors Product data sheet PNP high-voltage transistors BF821; BF823 PINNING FEATURES • Low current max. 50 mA

Contextual Info: BF821 BF823 SILICON EPITAXIAL TRANSISTORS P-N-P transistors Marking BF821 = IW BF823 = ÎY PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _J.0_ 2.8 0.14 Ö.09 0.48 0.38 0.70 0.50 3 Pin configuration 1.4 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 1.2 2.4 R0.1 .004 '

301 marking code PNP transistor

Abstract: BF820 BF821 BF822 BF823 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF821; BF823 PNP high-voltage transistors Product specification Supersedes data of 1997 Apr 23 1999 Apr 15 Philips Semiconductors Product specification PNP high-voltage transistors BF821; BF823 FEATURES

Contextual Info: BF821 BF823 HL SILICON EPITAXIAL TRANSISTORS P -N -P transistors M arking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIM ENSIONS IN m m _3.0 2.8 0.48 0.14 038 '• ^ 0.09 0.70 0.50 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 1.4 2.4 1.2

BF821

Abstract: BF823 transistors 10 KW
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BF821 BF823 SILICON EPITAXIAL TRANSISTORS P–N–P transistors Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

BF821

Abstract: BF823
Contextual Info: BF821 BF823 SILICON EPITAXIAL TRANSISTORS P-N -P transistors Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J5.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _l-°2_ 0.89 0.60 0.40 _2 .° 0_

BF821

Abstract: BF823
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BF821 BF823 SILICON EPITAXIAL TRANSISTORS P–N–P transistors Marking BF821 = 1W

Contextual Info: Transistors SMD Type Product specification BF821,BF823 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High voltage max. 300 V . 1 0.55 Low current (max. 50 mA) +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

smd transistor 1y

Abstract: BF821 BF823
Contextual Info: Transistors SMD Type PNP High-Voltage Transistors BF821,BF823 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High voltage max. 300 V . 1 0.55 Low current (max. 50 mA) +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1

8F820

Contextual Info: BF820, BF822 NPN Silicon Epitaxial Planar Transistors especially suited for application in class-B video output stages of TV receivers and monitors. As complementary types, the PNP transistors BF821 and BF823 are recommended. Top View Pin configuration 1 = Collector, 2 = Base, 3 = Emitter.

BF820

Abstract: BF821 BF822 BF823 BF823 NXP
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF821; BF823 PNP high-voltage transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 16 NXP Semiconductors Product data sheet PNP high-voltage transistors BF821; BF823 FEATURES PINNING • Low current max. 50 mA

BF823

Abstract: PNP Epitaxial Silicon Transistor sot-23 BF820 BF821 BF822
Contextual Info: BF821, BF823 Small Signal Transistors PNP FEATURES ♦ PNP Silicon Epitaxial Planar Transistors SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) .056 (1.43) .052 (1.33) 3 ♦ As complementary types, the NPN transistors BF820 and BF822 are recommended. .016 (0.4)

AXm marking

Contextual Info: BF821 BF823 SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature plastic package intended for application in thick and thin-film circuits. Primarily intended for use in telephony and professional communication equipment. N P-N complements are BF820, B F822 respectively.

BF820

Abstract: BF821 BF822 BF823
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF821; BF823 PNP high-voltage transistors Product specification Supersedes data of 1999 Apr 15 2004 Jan 16 Philips Semiconductors Product specification PNP high-voltage transistors BF821; BF823 FEATURES PINNING • Low current max. 50 mA

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BF821 BF823 SILICON EPITAXIAL TRANSISTORS P–N–P transisto rs Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

BF821

Abstract: BF823
Contextual Info: BF821 BF823 SILICON EPITAXIAL TRANSISTORS P-N -P transistors Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.48 0.38 0.14 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 J.02_ 0.60 0.40 0.89 _2 .00_ 1.80

Contextual Info: 'IL BF821 BF823 SILICON EPITAXIAL TRANSISTORS P-N -P transistors Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0. 2.8 0.48 TT3B Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 1.02 "” 5. 89^ 2.00_ 0.60 0.40 1.80

BF820

Abstract: BF821 BF822 BF823
Contextual Info: BF820, BF822 Small Signal Transistors NPN FEATURES SOT-23 ♦ NPN Silicon Epitaxial Planar Transistors .122 (3.1) .118 (3.0) .016 (0.4) .056 (1.43) .052 (1.33) 3 ♦ As complementary types, the PNP transistors BF821 and BF823 are recommended. .016 (0.4)

Contextual Info: Philips Semiconductors Product specification PNP high-voltage transistors BF821 ; BF823 FEATURES PINNING • Low current max. 50 mA PIN • High voltage (max. 300 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Telephony and professional communication equipment.