BFG400 Search Results

power amplifier circuit diagram with pcb layout

Abstract: BFG480W transistor amplifier 3 ghz MGS629 power amplifier circuit diagram with pcb layout 2 BFG400 0805CS TRANSISTOR noise figure measurements philips circuit diagram
Contextual Info: APPLICATION INFORMATION 2.4 GHz low noise amplifier with the BFG480W Philips Semiconductors Application information 2.4 GHz low noise amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W is one of the Philips double polysilicon wideband transistors of the BFG400 series.

MGS731

Abstract: BFG480W MGS732 0805CS BP317
Contextual Info: APPLICATION INFORMATION 900 MHz low noise amplifier with the BFG480W Philips Semiconductors 900 MHz low noise amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400W series.

BFG480W

Abstract: 0805CS BP317
Contextual Info: APPLICATION INFORMATION 2 GHz low noise amplifier with the BFG480W Philips Semiconductors 2 GHz low noise amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400W series.

power amplifier circuit diagram with pcb layout

Abstract: PH ON 4307 2.45 Ghz power amplifier 45 dbm 2.45 Ghz power amplifier BFG480W amplifier TRANSISTOR 12 GHZ power amplifier circuit diagram with pcb layout 2 Um 3562 BC817 2.45 Ghz power amplifier 30 db
Contextual Info: APPLICATION INFORMATION 2.45 GHz power amplifier with the BFG480W Philips Semiconductors Application information 2.45 GHz power amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400 series. These transistors are

micro amplifier 471

Abstract: philips 23 BFG425W BP317 hewlett packard application note 972 stripline pcb
Contextual Info: APPLICATION INFORMATION 900 MHz driver amplifier with the BFG425W Philips Semiconductors Application information 900 MHz driver amplifier with the BFG425W ABSTRACT • Description of the product The BFG425W is one of the Philips double polysilicon wideband transistors of the BFG400W series.

BFG410W

Abstract: Buffer Amplifier Ghz BFG400 BP317 application notes philips rf philips printed circuit board design
Contextual Info: APPLICATION INFORMATION 2 GHz buffer amplifier with the BFG410W Philips Semiconductors Application information 2 GHz buffer amplifier with the BFG410W ABSTRACT • Description of the product The BFG410W, one of the Philips double polysilicon wideband transistors of the BFG400 series.

BFG425

Abstract: BFG425W BFG410W TRANSISTOR noise figure measurements 2 GHz LNA RNR-T45-96-B-773
Contextual Info: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-773 : T. Buss : 14-Nov-1996 : P.G. Transistors & Diodes, Development 2GHz LOW NOISE AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly

BFG403W

Abstract: 0805CS Series amplifier 900mhz 0805CS 900MHz LOW NOISE AMPLIFIER WITH THE BFG403W
Contextual Info: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-006 : T.F. Buss : Jan. 6 1997 : P.G. Transistors & Diodes, Development 900MHz LOW NOISE AMPLIFIER WITH THE BFG403W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG403W Double Poly

Contextual Info: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-375 : T. Buss : 20 May 1997 : P.G. Transistors & Diodes, Development 2GHz BUFFER-AMPLIFIER WITH THE BFG410W Abstract: This application note contains an example of a Buffer-Amplifier with the new BFG410W Double Poly RFtransistor. The buffer is designed for a frequency f=2GHz. Performance at f=2GHz: Isolation S12~-31dB,

BB142

Abstract: 43p transistor BFG425W 1K 1608 2K 0402 BFG410W TRANSISTOR noise figure measurements tdk VCO BFG425W APPLICATION 0402_PHILIPS
Contextual Info: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-45-98-B-0827 : Haris Duric & Robert Cloudt : 16 December 1998 : DSC-N, Development CDMA CELLULAR VCO WITH THE BFG425W, BFG410W AND VARACTOR BB142

L05 SMD

Abstract: CMP266 RNR-T45-96-B-1025 L6 PHILIPS transistor smd Sb1 BFG425W CMP401 BFG400W CMP409 CMP231
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-1025 : T.F. Buss : 10 Dec. 1996 : P.G. Transistors & Diodes, Development IMPROVED IP3 BEHAVIOUR OF THE 900MHz LOW NOISE AMPLIFIER WITH THE BFG425W

BFG425W

Abstract: 900mhz driver amplifier 900mhz DRIVER DESIGN philips c3 RF 900MHz
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0688 : T. Buss : 26 Aug 1997 : P.G. Transistors & Diodes, Development 900MHz DRIVER-AMPLIFIER WITH ENABLE-SWITCH USING THE BFG425W Abstract:

BFG480W

Abstract: philips c3 PPAP 0805CS TRANSISTOR noise figure measurements BFG400W C327
Contextual Info: H Philips Semiconductors B.V. Report nr. Author Date Department : RNR-45-98-B-0703 : T.F. Buss / J.Bouwman : 28-10-1998 : Development DSC-N 900 MHz Driver with the BFG480W Abstract: This application note contains an example of a driver, designed for a frequency f=900MHz.

2F1 SMD Transistor

Abstract: 2F2 SMD Transistor w2 smd transistor TRANSISTOR SMD w2 schematic diagram induction heating BFG425W smd transistor w2 2 GHz LNA BFG425W APPLICATION BFG410W
Contextual Info: Philips Semiconductors Application Note Ultra Low Noise Amplifiers for 900 and 2000 MHz with High IP3 by Korné Vennema Philips Semiconductors Slatersville, RI December 1996 #KV96-157 This application note describes four Low Noise Amplifier designs with the

BFG425W

Contextual Info: AN11449 Low Noise Flat Gain 40M~1GHz DVB-C LNA with BFG425W Rev.1 — 22 October 2013 Application note Document information Info Content Keywords BFG425W, 40M~1GHz LNA, DVB-C, Abstract This document provides circuit simulation, schematic, layout, BOM and typical EVB performance for a 40M ~ 1GHz DVB-C LNA

transistor bipolar driver schematic

Abstract: BFG425W RNR-T45-97-B-0787 2Ghz amplifier BFG425 BFG425W APPLICATION b0787
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0787 : T. Buss : 29 Sept 1997 : P.G. Transistors & Diodes, Development 2GHz DRIVER-AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a frequency f=2GHz.

b 772 p

Abstract: CMP265 CMP460 BFG410W CMP230 CMP231 CMP287 CMP452 CMP453 CMP485
Contextual Info: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0789 : T. Buss th : 30 of September 97 : P.G. Transistors & Diodes, Development 2GHz LOW NOISE AMPLIFIER WITH THE BFG410W update of report RNR-T45-96-B-772

Contextual Info: BFGBFG-S 系列电磁流量计 系列电磁流量计 传感器规格 型号 BFG-10S BFG-15S BFG-20S BFG-25S BFG-50S BFG-65S BFG-80S BFG-100S BFG-125S BFG-150S BFG-200S BFG-250S BFG-300S BFG-350S BFG-400S BFG-500S BFG-600S BFG-700S BFG-800S BFG-900S BFG-1000S

BFG425W

Abstract: BFG425W APPLICATION RNR-T45-97-B-0686 transistor bipolar driver schematic Z048
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0686 : T. Buss : 22 Aug1997 : P.G. Transistors & Diodes, Development 900MHz DRIVER-AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a frequency f=900MHz.

L05 SMD

Abstract: w05 smd transistor SMD W05 W05 transistor W05 SMD L6 PHILIPS CMP401 CMP281 CMP263 CMP286
Contextual Info: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-770 : T. Buss : 20-Jan-00 : P.G. Transistors & Diodes, Development 900MHz LOW NOISE AMPLIFIER WITH THE BFG410W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG410W Double Poly

Philips npo 0805

Abstract: 5Ghz lna transistor datasheet BFG425W 0805CS Series BFG425W APPLICATION philips satellite systems w2 smd transistor 0805CS CMP230 CMP231
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0584 : T.F. Buss : 16-07-97 : P.G. Transistors & Diodes, Development 1.5GHz LOW NOISE AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly