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    Infineon Technologies AG BFQ19SH6327XTSA1

    RF TRANS NPN 15V 5.5GHZ SOT89-3
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    DigiKey BFQ19SH6327XTSA1 Digi-Reel 8,316 1
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    BFQ19SH6327XTSA1 Reel 7,000 1,000
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    Avnet Americas BFQ19SH6327XTSA1 Ammo Pack 19 Weeks 1
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    Mouser Electronics BFQ19SH6327XTSA1 14,087
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    Verical BFQ19SH6327XTSA1 12,029 120
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    BFQ19SH6327XTSA1 3,369 27
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    BFQ19SH6327XTSA1 Cut Strips 3,369 4 Weeks 1
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    BFQ19SH6327XTSA1 1,000 4 Weeks 1,000
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    Newark BFQ19SH6327XTSA1 Cut Tape 361 1
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    Rochester Electronics BFQ19SH6327XTSA1 1
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    TME BFQ19SH6327XTSA1 1,070 1
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    Chip1Stop BFQ19SH6327XTSA1 Cut Tape 12,029
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    BFQ19SH6327XTSA1 Cut Tape 978
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    EBV Elektronik BFQ19SH6327XTSA1 5 Weeks 1,000
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    NXP Semiconductors BFQ19,115

    RF TRANS NPN 15V 5.5GHZ SOT89-3
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    Infineon Technologies AG BFQ-19S-E6327

    RF TRANS NPN 15V 5.5GHZ SOT89
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    Infineon Technologies AG BFQ 19S H6327

    RF Bipolar Transistors RF BIP TRANSISTORS
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    Mouser Electronics BFQ 19S H6327 5,173
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    CoreStaff Co Ltd BFQ 19S H6327 8
    • 1 $0.122
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    Philips Semiconductors BFQ19,115

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    Bristol Electronics BFQ19,115 2,600
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    BFQ19,115 1,077
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    Quest Components BFQ19,115 2,080
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    BFQ19 Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFQ19 NXP Semiconductors BFQ19 - NPN 5 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; fT: 5.5 GHz; Frequency: 3.3 MHz; GUM @ f1: 11.5 dB; GUM @ f2: 7.5 dB; IC: 100 mA; Noise figure: 3.3@f1 dB; Ptot: 1000 mW; Polarity: NPN ; VCEO max: 15 V Original PDF
    BFQ19 Philips Semiconductors NPN 5 GHz wideband transistor Original PDF
    BFQ19 Philips Semiconductors NPN 5 GHz Wideband Transistor Original PDF
    BFQ19 Motorola European Master Selection Guide 1986 Scan PDF
    BFQ19 Motorola NPN silicon RF transistor. Scan PDF
    BFQ19 Mullard Quick Reference Guide 1977/78 Scan PDF
    BFQ19 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BFQ19 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BFQ19 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BFQ19 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFQ19 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFQ19 Siemens Components for Surface Mounting 1983/4 Scan PDF
    BFQ19,115 NXP Semiconductors NPN 5 GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; fT: 5.5 GHz; Frequency: 3.3 MHz; GUM @ f1: 11.5 dB; GUM @ f2: 7.5 dB; IC: 100 mA; Noise figure: 3.3@f1 dB; Ptot: 1000 mW; Polarity: NPN ; VCEO max: 15 V; Package: week 28, 2003 Original PDF
    BFQ193 Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFQ193 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFQ193 Siemens NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) Original PDF
    BFQ193 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFQ194 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFQ194 Siemens PNP Silicon RF Transistor Scan PDF
    BFQ196 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    BFQ19 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFQ19

    Abstract: BFQ19C
    Text: BFQ19 NPN 5 GHz wideband transistor Rev. 03 — 28 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


    Original
    PDF BFQ19 771-BFQ19-T/R BFQ19 BFQ19C

    BFQ19S

    Abstract: No abstract text available
    Text: BFQ19S NPN Silicon RF Transistor 1  For low noise, low distortion broadband 2 amplifiers in antenna and 3 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFQ19S VPS05162 Jun-22-2001 BFQ19S

    Untitled

    Abstract: No abstract text available
    Text: BFQ19S NPN Silicon RF Transistor • For low noise, low distortion broadband 1 2 amplifiers in antenna and 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available


    Original
    PDF BFQ19S AEC-Q101

    BAW78D

    Abstract: BFQ19S
    Text: BFQ19S NPN Silicon RF Transistor* • For low noise, low distortion broadband 1 amplifiers in antenna and 2 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original
    PDF BFQ19S BAW78D BFQ19S

    BFQ19S E6327

    Abstract: BAW78D BFQ19S E6327
    Text: BFQ19S NPN Silicon RF Transistor 1  For low noise, low distortion broadband 2 amplifiers in antenna and 3 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFQ19S VPS05162 BFQ19S E6327 BAW78D BFQ19S E6327

    Untitled

    Abstract: No abstract text available
    Text: BFQ19S NPN Silicon RF Transistor* • For low noise, low distortion broadband 1 2 amplifiers in antenna and 3 2 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original
    PDF BFQ19S

    BFQ19

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ19 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFQ19 PINNING NPN transistor in a SOT89 plastic


    Original
    PDF BFQ19 BFQ19

    BAW78D

    Abstract: BFQ19S transistor MARKING CODE LAYOUT G SOT89
    Text: BFQ19S NPN Silicon RF Transistor* • For low noise, low distortion broadband 1 amplifiers in antenna and 2 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original
    PDF BFQ19S BAW78D BFQ19S transistor MARKING CODE LAYOUT G SOT89

    S*S Technologies

    Abstract: No abstract text available
    Text: BFQ19S NPN Silicon RF Transistor* • For low noise, low distortion broadband 1 amplifiers in antenna and 2 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFQ19S S*S Technologies

    Untitled

    Abstract: No abstract text available
    Text: BFQ19S NPN Silicon RF Transistor 1  For low noise, low distortion broadband 2 amplifiers in antenna and 3 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFQ19S VPS05162

    Untitled

    Abstract: No abstract text available
    Text: BFQ19S Low Noise Silicon Bipolar RF Transistor • For low noise, low distortion broadband 1 amplifiers in antenna and 2 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available


    Original
    PDF BFQ19S AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: BFQ19S NPN Silicon RF Transistor* • For low noise, low distortion broadband 2 3 amplifiers in antenna and telecommunications systems up to 1.5 GHz 1 at collector currents from 10 mA to 70 mA * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFQ19S

    transistor bfq19

    Abstract: BFQ19 MBB773
    Text: BFQ19 NPN 5 GHz wideband transistor Rev. 03 — 28 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


    Original
    PDF BFQ19 transistor bfq19 BFQ19 MBB773

    Untitled

    Abstract: No abstract text available
    Text: BFQ19S NPN Silicon RF Transistor • For low noise, low distortion broadband 1 amplifiers in antenna and 2 3 telecommunications systems up to 1.5 GHz 2 at collector currents from 10 mA to 70 mA • Pb-free RoHS compliant package • Qualification report according to AEC-Q101 available


    Original
    PDF BFQ19S AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F MOTOROLA 4bE D • b3b?254 OOlSOfi? 3 I noTb r - 3 \~ J .$ SE M IC O N D U C T O R TECHNICAL DATA MRFQ19 The RF Line DIE SOURCE SAME AS BFQ19 N P N S ilic o n H ig h F re q u e n cy T r a n s isto r iC m ISO mA SURFACE MOUNT HIGH FREQUENCY


    OCR Scan
    PDF MRFQ19 IS21I2 BFQ19 7S1-03,

    BFG195

    Abstract: SOT103 BFQ195 BFG197 BFG198 X3A-BFQ195 320nm
    Text: P rodu ct spe cification P h ilip s S em icon du ctors T-31-9 o NPN 8 GHz wideband transistor crystal PHILIPS INTERNATIONAL X3A-BFQ195 SbE D • TllGflSb □□HbDTfl 3 ^ IPHIN M E C H A N IC A L DATA DESCRIPTION C rystal NPN crystal used in BFG195 SOT103 , BFG197


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    PDF BFG195 OT103) BFG197 OT143) BFG198 OT223) X3A-BFQ195 X3A-BFQ195 URV-3-5-52/733 BFG195 SOT103 BFQ195 BFG197 BFG198 320nm

    X3A-BFQ195

    Abstract: BFG195 BFG197 BFG198
    Text: Philips Semiconductors |H bb SB T B l NPN 8 GHz wideband transistor crystal D0322Dfl 757 APY Product specification X3A-BFQ195 N AMER PHILIPS/DISCRETE LTE ]> MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFG195 SOT103 , BFG197 (SOT143) and BFG198 (SOT223). Crystals are supplied


    OCR Scan
    PDF bbS3T31 00322DÃ X3A-BFQ195 BFG195 BFG197 OT143) BFG198 OT223) X3A-BFQ195 URV-3-5-52/733 BFG195 BFG197 BFG198

    IC 1296

    Abstract: K 193 transistor sot marking code ZS BFQ193
    Text: SIEMENS BFQ193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 7.5 GHz F = 1.3 dB at 900 MHz Marking Ordering Code Pin Configuration BFQ 193 RCs 1=B 2=C CO II Q62702-F1312 Package m


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    PDF BFQ193 Q62702-F1312 OT-89 IS21el2 IC 1296 K 193 transistor sot marking code ZS BFQ193

    MXR5583

    Abstract: MXR5943 BFQ17 BFQ18A BFQ19 MR3866 MXR5160
    Text: SURFACE MOUNT PRODUCTS continued SOT-89 Transistors (continued) RF NPN hFE *T Device Min (MHz) BFQ19 BFQ18A MXR5943 BFQ17 MR3866 IC (mA) V b R(CEO ) Min 50 25 25 25 25 10 200 50 50 50 50 50 25 10 100 - 100 50 4000 3200* 1200 1200 500 50 150 50 15 15 30


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    PDF OT-89 BFQ19 BFQ18A MXR5943 BFQ17 MR3866 MXR5583 MXR5160 OT-23 OT-89

    Untitled

    Abstract: No abstract text available
    Text: □(□53=131 0035DL.2 715 B A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFQ19 N AMER PHILIPS/DISCRETE DESCRIPTION b7E ]> PINNING NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. It is


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    PDF 0035DL BFQ19

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BFQ19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1,5GHz at collector currents from 10 mA to 70 mA • C EC C -type available: C E C C 50 002/259 E S P : Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan
    PDF BFQ19S Q62702-F1088 OT-89 fl535b05 D1S2011 A235bD5

    Untitled

    Abstract: No abstract text available
    Text: bbS3T31 0Q322Dfl 757 Philips Semiconductors APY Product specification NPN 8 GHz wideband transistor crystal X3A-BFQ195 AUER PHILIPS/DISCRETE b'JE ]> MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFG195 SOT103 , BFG197 (SOT143) and BFG198 (SOT223). Crystals are supplied


    OCR Scan
    PDF bbS3T31 0Q322Dfl X3A-BFQ195 BFG195 OT103) BFG197 OT143) BFG198 OT223)

    MRFQ19

    Abstract: No abstract text available
    Text: MOTOROLA • SEM IC O N D U C T O R TECHNICAL DATA MRFQ19 The RF Line DIE SO URCE SA M E A S BFQ19 N P N S ilic o n H ig h Frequ ency T ra n sisto r lc = 150 mA SURFACE M O U N T HIGH FREQUENCY TRANSISTOR NPN SILICON . . . d e sig n e d fo r am plifier, o scillator or fre q u e n cy m ultiplier a p p lica tio n s in industrial


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    PDF MRFQ19 BFQ19 SO-81 IS21I2 MRFQ19

    BFT97

    Abstract: Siemens 1985 BFT65 bfr91a siemens BFQ64P BFT98T BFS55A bf254 BFR96S
    Text: S IE M E N S / SPCLt SEMICONDS ' ' ?QC D • fiS 3b 3E Q 0013325 1 ■ RF Transistors Type PNP= P NPN= N Typical Application epitaxial=E planar = PL E, PL Maximum Ratings Vcbo V VcEO (V) ^80 (V) (mA) fe ft (°C) 40 25 4 25 150 Plot (mW) (°C/W) 500 N Uncontrolled TV IF amplifier stages


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    PDF BF199 BF240 BF241 BF254 BF255 BF414 BF420 BF420L BF421 BF421L BFT97 Siemens 1985 BFT65 bfr91a siemens BFQ64P BFT98T BFS55A BFR96S