BFS17A Search Results
BFS17A Price and Stock
NXP Semiconductors BFS17A,235RF TRANS NPN 15V 2.8GHZ SOT-23 |
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BFS17A,235 | Reel |
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BFS17A,235 | 10,000 |
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BFS17A,235 | 1,214 |
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NXP Semiconductors BFS17A,215RF TRANS NPN 15V 2.8GHZ SOT-23 |
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BFS17A,215 | Cut Tape |
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BFS17A,215 | Reel | 3,000 |
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BFS17A,215 | 3,000 |
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BFS17A,215 | 3,000 |
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BFS17A,215 | 1,168 |
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Vishay Intertechnologies BFS17AR-GS08- Tape and Reel (Alt: BFS17AR-GS08) |
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BFS17AR-GS08 | Reel | 111 Weeks | 15,000 |
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Philips Semiconductors BFS17AT/R |
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BFS17AT/R | 2,688 |
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BFS17AT/R | 2,150 |
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Philips Semiconductors BFS17A |
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BFS17A | 1,707 |
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BFS17A | 20 |
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BFS17A Datasheets (25)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BFS17A |
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BFS17A - NPN 3 GHz wideband transistor - @ f: 800 MHz; @ f1: 800 ; @ IC: 14 mA; fT: 2.8 GHz; Frequency: 2.5 MHz; GUM @ f1: 13.5 dB; Gain @ 1.9 GHz: 25@250MHz dB; Gain @ 900 Mhz: 25@250MHz dB; IC: 25 mA; Noise figure: 2.5@f1 dB; Ptot: 300 mW | Original | 65.41KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17A |
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NPN 3 GHz wideband transistor | Original | 52.18KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17A |
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NPN 3 GHz wideband transistor | Original | 62.01KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17A |
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NPN 3 GHz wideband transistor | Original | 45KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17A |
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NPN 3 GHz Wideband Transistor | Original | 238.66KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17A | Vishay Telefunken | Silicon NPN Planar RF Transistor | Original | 166.99KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17A | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 88.51KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17A | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form | 32.3KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17A |
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NPN 3 GHz Wideband Transistor | Scan | 118.17KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17A |
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NPN 2 GHz WIDEBAND TRANSISTOR | Scan | 41.47KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17A,215 |
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NPN 3 GHz wideband transistor - @ f: 800 MHz; @ f1: 800 ; @ IC: 14 mA; fT: 2.8 GHz; Frequency: 2.5 MHz; GUM @ f1: 13.5 dB; Gain @ 1.9 GHz: 25@250MHz dB; Gain @ 900 Mhz: 25@250MHz dB; IC: 25 mA; Noise figure: 2.5@f1 dB; Ptot: 300 mW; Package: SOT23 (TO-236AB); Container: Tape reel smd | Original | 35.63KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17A,215 |
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BFS17 - TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SST, 3 PIN, BIP RF Small Signal | Original | 65.41KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17A,235 |
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NPN 3 GHz wideband transistor - @ f: 800 MHz; @ f1: 800 ; @ IC: 14 mA; fT: 2.8 GHz; Frequency: 2.5 MHz; GUM @ f1: 13.5 dB; Gain @ 1.9 GHz: 25@250MHz dB; Gain @ 900 Mhz: 25@250MHz dB; IC: 25 mA; Noise figure: 2.5@f1 dB; Ptot: 300 mW; Package: SOT23 (TO-236AB); Container: Tape reel smd | Original | 35.63KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17A,235 |
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BFS17A - NPN 3 GHz wideband transistor, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, Large | Original | 65.41KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BFS17A/C,215 |
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BFS17A/C - NPN 3 GHz wideband transistor, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel | Original | 65.41KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17AR | Vishay Intertechnology | Silicon NPN Planar RF Transistor | Original | 227.31KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17AR | Vishay Telefunken | Silicon NPN Planar RF Transistor | Original | 166.99KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17AR-GS08 |
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TRANS GP BJT NPN 15V 15A 3 pin SOT-23 T/R | Original | 416.54KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17ASMD | Various Russian Datasheets | Transistor | Original | 84.39KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFS17AT |
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TRANS GP BJT NPN 15V 0.025A 3 pin SOT-23 T/R | Original | 35.65KB | 6 |
BFS17A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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transistor 431b
Abstract: 431B TRANSISTOR marking code gj BFS17 BFS17A MARKING 431B SOT-23
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BFS17A S0T-23 BFS17A BFS17 transistor 431b 431B TRANSISTOR marking code gj MARKING 431B SOT-23 | |
Contextual Info: BFS17A / BFS17AR / BFS17AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • • • • • Low noise figure High power gain e3 Small collector capacitance Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC |
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BFS17A BFS17AR BFS17AW 2002/95/EC 2002/96/EC OT-23 OT-323 OT-23 | |
FHC30LG
Abstract: ne72089 KC535C NE388-06 AL307BM IC 78L12 SOT89 KC535B AL307 79L05 hearing aid lm358
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MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 FHC30LG ne72089 KC535C NE388-06 AL307BM IC 78L12 SOT89 KC535B AL307 79L05 hearing aid lm358 | |
E2p 28 transistor
Abstract: E2p transistor transistor applications
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BFS17A E2p 28 transistor E2p transistor transistor applications | |
Contextual Info: BFS17A/BFS17AR/BFS17AW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band, low noise, small signal amplifiers up to UHF frquencies, high speed logic applications and oscillator applications. |
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BFS17A/BFS17AR/BFS17AW BFS17A BFS17AR BFS17AW D-74025 20-Jan-99 | |
Contextual Info: DISCRETE SEMICONDUCTORS DAT BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS |
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BFS17A September1995 MSB003 R77/02/pp9 | |
09 66 563 681
Abstract: silicon npn planar rf transistor sot 143 BFS17A ic 565 features RF NPN POWER TRANSISTOR 3 GHZ 420 NPN Silicon RF Transistor marking E5 RF NPN POWER TRANSISTOR 2.5 GHZ BFS17AR
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BFS17A/BFS17AR BFS17A BFS17AR D-74025 17-Apr-96 09 66 563 681 silicon npn planar rf transistor sot 143 ic 565 features RF NPN POWER TRANSISTOR 3 GHZ 420 NPN Silicon RF Transistor marking E5 RF NPN POWER TRANSISTOR 2.5 GHZ | |
BFS17AWContextual Info: BFS17AW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide-band, low noise, small signal amplifiers up to UHF frequencies, high speed logic applications and oscillator applications. Features |
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BFS17AW D-74025 07-Nov-97 BFS17AW | |
E2p 93 transistor
Abstract: E2p 28 transistor 1 307 329 082 E2p 49 transistor BFS17 BFS17A
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BFS17A E2p 93 transistor E2p 28 transistor 1 307 329 082 E2p 49 transistor BFS17 BFS17A | |
626 057-0
Abstract: BFS17A BFS17AR BFS17AW 682 MARKING SOT-23 944 SOT323
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BFS17A BFS17AR BFS17AW OT-23 2002/95/EC 2002/96/EC OT-323 BFS17A OT-23 626 057-0 BFS17AW 682 MARKING SOT-23 944 SOT323 | |
cq 636 g transistorContextual Info: bbsa'oi Philips Semiconductors goeses^ n s • APX N AMER PHILIPS/D ISCR ETE NPN 3 GHz wideband transistor b?E Product specification D ^ BFS17A PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners. |
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BFS17A cq 636 g transistor | |
bfr17
Abstract: BFS17A BFS17AR BFS17AW bfr17ar
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BFS17A/BFS17AR/BFS17AW BFS17A BFS17AR BFS17AW D-74025 20-Jan-99 bfr17 bfr17ar | |
E2p 96 transistor
Abstract: BFS17 BFS17A MSB003
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711Dflgb BFS17A MSB003 E2p 96 transistor BFS17 | |
BFS17A
Abstract: MSB003
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BFS17A September1995 MSB003 BFS17A MSB003 | |
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po102
Abstract: 1401CA1 DIAC ecg6407 ECG6407 ic 565 1401CA3 AL307BM 78l05 sot-23 DZS535-15 AL307
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MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 po102 1401CA1 DIAC ecg6407 ECG6407 ic 565 1401CA3 AL307BM 78l05 sot-23 DZS535-15 AL307 | |
85039Contextual Info: ViSHAY BFS17A/BFS17AR/BFS17AW ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications Wide band, low noise, small signal amplifiers up to UHFfrquencies, high speed logic applications and os |
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BFS17A/BFS17AR/BFS17AW BFS17A BFS17AR BFS17AW 20-Jan-99 BFS17A/BFS17AR/BFS17AW_ 85039 | |
BFS17A
Abstract: MSB003 E2p transistor
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BFS17A September1995 MSB003 R77/02/pp9 BFS17A MSB003 E2p transistor | |
SOT23 marking 658Contextual Info: BFS17A / BFS17AR / BFS17AW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features • Low noise figure • High power gain • Small collector capacitance 2 3 1 SOT-23 Applications Wide band, low noise, small signal amplifiers up to |
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BFS17A BFS17AR BFS17AW OT-23 OT-23 BFS17AW SOT23 marking 658 | |
BFS17A
Abstract: BFS17AR
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BFS17A/BFS17AR BFS17A BFS17AR D-74025 31-Oct-97 | |
E2p 28 transistor
Abstract: 55C40 BFS17 BFS17A E2p device marking E2p transistor
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BFS17 E2p 28 transistor 55C40 BFS17A E2p device marking E2p transistor | |
BFS17A
Abstract: BFS17AR BFS17AW Marking E5 power sot-23 Marking aa
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BFS17A/BFS17AR/BFS17AW BFS17A BFS17AR BFS17AW D-74025 20-Jan-99 Marking E5 power sot-23 Marking aa | |
E2p 28 transistor
Abstract: transistor DATA REFERENCE handbook RF TRANSISTOR 2.5 GHZ s parameter E2p device marking marking code 10 sot23 marking code ce SOT23 RF NPN POWER TRANSISTOR 2.5 GHZ BFS17A MSB003
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BFS17A MSB003 E2p 28 transistor transistor DATA REFERENCE handbook RF TRANSISTOR 2.5 GHZ s parameter E2p device marking marking code 10 sot23 marking code ce SOT23 RF NPN POWER TRANSISTOR 2.5 GHZ BFS17A MSB003 | |
Contextual Info: BFS17A Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)25 I(C) Max. (A)25m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)135õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition) |
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BFS17A | |
Contextual Info: TEMIC BFS17AW S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications W ide-band, low noise, small signal amplifiers up to UHF frequencies, high speed logic applications and oscillator |
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BFS17AW D-74025 -Nov-97 |