BLF4G10LS-160 Search Results
BLF4G10LS-160 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| BLF4G10LS-160 |
|
UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB | Original | 118.81KB | 15 | ||
| BLF4G10LS-160,112 |
|
RF FETs, Discrete Semiconductor Products, BASESTATION FINAL 1GHZ SOT502B | Original | 15 |