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    BLF6G20-75 Search Results

    BLF6G20-75 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BLF6G20-75
    NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 37.5 %; Frequency band: 1930 - 1990 GHz; Mode: CW EDGE ; Output power: 29.5 W; Package material: SOT502A ; Power gain: 19 dB Original PDF 86.7KB 12
    BLF6G20-75,112
    NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 37.5 %; Frequency band: 1930 - 1990 GHz; Mode: CW EDGE ; Output power: 29.5 W; Package material: SOT502A ; Power gain: 19 dB; Package: SOT502A (LDMOST); Container: Blister pack Original PDF 86.7KB 12