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    BLF6G20LS-75,112 Search Results

    BLF6G20LS-75,112 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BLF6G20LS-75,112
    NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 52 %; Frequency band: 1800 - 2000 GHz; Mode: CW / EDGE ; Output power: 63 / 29.5 W; Package material: SOT502B ; Power gain: 19 / 19 dB; Package: SOT502B (LDMOST); Container: Blister pack Original PDF 86.7KB 12
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    BLF6G20LS-75,112 Price and Stock

    Ampleon

    Ampleon BLF6G20LS-75,112

    RF MOSFET LDMOS 28V SOT502B
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    Avnet Americas BLF6G20LS-75,112 Tube 26 Weeks 60
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