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    BLF6G22-180PN,112 Search Results

    BLF6G22-180PN,112 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BLF6G22-180PN,112
    		NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 50 W; Package material: SOT539A ; Power gain: 17.5 dB; Package: SOT539A (LDMOST); Container: Blister pack Original PDF 78.05KB 11
    BLF6G22-180PN,112
    		NXP Semiconductors RF FETs, Discrete Semiconductor Products, TRANS BASESTATION SOT539A Original PDF 14
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    BLF6G22-180PN,112 Price and Stock

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    Ampleon BLF6G22-180PN,112

    RF MOSFET LDMOS 32V SOT539A
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    DigiKey BLF6G22-180PN,112 Tray
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    Avnet Americas BLF6G22-180PN,112 Tube 60
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    NXP Semiconductors BLF6G22-180PN,112

    Discontinued
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    Vyrian BLF6G22-180PN,112 1,489
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