BLF6G22LS-75 Search Results

BLF6G22LS-75 Datasheets (8)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BLF6G22LS-75		NXP Semiconductors	Power LDMOS transistor	Original	PDF	78.4KB	10
BLF6G22LS-75		NXP Semiconductors	BLF6G22 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power	Original	PDF	126.51KB	11
BLF6G22LS-75,112		Ampleon USA	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.7DB SOT502B	Original	PDF	841.82KB
BLF6G22LS-75,118		Ampleon USA	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.7DB SOT502B	Original	PDF	841.82KB
BLF6G22LS-75,112		NXP Semiconductors	Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 30.5 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 17 W; Package material: SOT502B ; Power gain: 18.7 dB; Package: SOT502B (LDMOST); Container: Blister pack	Original	PDF	78.38KB	10
BLF6G22LS-75,112		NXP Semiconductors	BLF6G22 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power	Original	PDF	126.51KB	11
BLF6G22LS-75,118		NXP Semiconductors	Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 30.5 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 17 W; Package material: SOT502B ; Power gain: 18.7 dB; Package: SOT502B (LDMOST); Container: Reel Pack, SMD, 13"	Original	PDF	78.38KB	10
BLF6G22LS-75,118		NXP Semiconductors	BLF6G22 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power	Original	PDF	126.51KB	11

BLF6G22LS-75 Price and Stock

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Ampleon


Ampleon BLF6G22LS-75,112 LDMOS RF Power Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	BLF6G22LS-75,112		34		1	1 - 10 - 100 $53.87 1000 $48.20 10000 $45.36	Buy Now