BPV11 Search Results
BPV11 Price and Stock
Vishay Semiconductors BPV11FPHOTOTRANSISTOR 900 TO 980 NM |
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BPV11F | Bulk | 5,668 | 1 |
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Vishay Semiconductors BPV11PHOTOTRANSISTOR 450 TO 1080 NM |
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BPV11 | Bulk | 21 | 1 |
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Vishay Intertechnologies BPV11FPHOTO TRANS. 5MM 15DEG FILTR-e4 - Bulk (Alt: 78Y9448) |
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BPV11F | Bulk | 17 Weeks, 5 Days | 1 |
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BPV11F | 7,313 |
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BPV11F | 1,000 | 21 |
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BPV11F | 1,000 | 6 Weeks | 1 |
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BPV11F | Bulk | 69 | 1 |
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BPV11F | Tube | 6,000 | 2,000 |
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BPV11F | 1 |
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BPV11F | 4,000 |
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BPV11F | 26 |
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BPV11F | 2,000 | 7 Weeks | 2,000 |
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BPV11F | 2,000 | 1 |
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Vishay Intertechnologies BPV11PHOTO TRANS. 5MM 15DEG-e4 - Bulk (Alt: BPV11) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BPV11 | Bulk | 6 Weeks | 2,000 |
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BPV11 | 5,246 |
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BPV11 | Bulk | 1,279 | 1 |
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BPV11 | 1,185 | 1 |
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BPV11 | 1,480 |
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BPV11 | 7 Weeks | 2,000 |
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Vishay Siliconix BPV11F30 deg IR Phototransistor, Through Hole 2-Pin 5mm (T-1 3/4) package |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BPV11F | Bulk | 1,971 | 1 |
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BPV11 Datasheets (8)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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BPV11 | Vishay Intertechnology | Silicon NPN Phototransistor | Original | 90.81KB | 6 | |||
BPV11 | Vishay Semiconductors | Optical Sensors - Phototransistors, Sensors, Transducers, PHOTOTRANS NPN 5MM CLEAR LENS | Original | 5 | ||||
BPV11 | Vishay Telefunken | Phototransistor Module, 1nA Dark Current, 850nm Wavelength | Original | 127.42KB | 6 | |||
BPV11 | Telefunken Electronic | Photo Detectors / Phototransistors / Photo Pin Diodes | Scan | 252.28KB | 5 | |||
BPV11F | Vishay Intertechnology | Silicon NPN Phototransistor | Original | 91.41KB | 6 | |||
BPV11F | Vishay Semiconductors | Optical Sensors - Phototransistors, Sensors, Transducers, PHOTOTRANS NPN 5MM IR 70V | Original | 5 | ||||
BPV11F | Vishay Telefunken | Phototransistor, 1nA Dark Current, 930nm Wavelength | Original | 128.09KB | 6 | |||
BPV11F | Telefunken Electronic | Photo Detectors / Phototransistors / Photo Pin Diodes | Scan | 252.28KB | 5 |
BPV11 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times |
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BPV11F BPV11F 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
BPV11F
Abstract: IC AN 8249
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Original |
BPV11F BPV11F 900nm) D-74025 20-May-99 IC AN 8249 | |
BPW20RF
Abstract: BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g
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BPV11 2002/95/EC 2002/96/EC BPV11 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 BPW20RF BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g | |
Vishay Telefunken Phototransistor
Abstract: BPV11
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BPV11 BPV11 D-74025 20-May-99 Vishay Telefunken Phototransistor | |
BPV11Contextual Info: BPV11 Vishay Semiconductors Silicon NPN Phototransistor Description BPV11 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. Due to its waterclear epoxy lens the device is sensitive to visible and near infrared radiation. |
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BPV11 BPV11 2002/95/EC 2002/96/EC 08-Apr-05 | |
Contextual Info: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
Original |
BPV11 2002/95/EC 2002/96/EC BPV11 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
Contextual Info: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
Original |
BPV11 2002/95/EC 2002/96/EC BPV11 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
BPV11Contextual Info: BPV11 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
Original |
BPV11 2002/95/EC 2002/96/EC BPV11 11-Mar-11 | |
8253CContextual Info: Temic BPV11F S e m i c o n d u c t o r s Silicon NPN Phototransistor Description B P V U F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T - H i plastic pack age. The epoxy package itself is an IR filter, spectrally |
OCR Scan |
BPV11F BPV11F 900nm 16-Ocr-96 16-Oct-% 16-Oct-96 8253C | |
Contextual Info: BPV11 Vishay Telefunken Silicon NPN Phototransistor Description BPV11 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. Due to its waterclear epoxy lens the device is sensitive to visible and near infrared radiation. |
Original |
BPV11 BPV11 D-74025 20-May-99 | |
Contextual Info: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
Original |
BPV11 2002/95/EC 2002/96/EC BPV11 11-Mar-11 | |
Contextual Info: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
Original |
BPV11 BPV11 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
ic 8253
Abstract: BPV11
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BPV11 BPV11 D-74025 16-Oct-96 ic 8253 | |
BPV11F
Abstract: an 8249
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BPV11F BPV11F D-74025 26-Mar-04 an 8249 | |
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BPV11FContextual Info: BPV11F Vishay Telefunken Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters l p |
Original |
BPV11F BPV11F 900nm) D-74025 20-May-99 | |
BPV11
Abstract: ic 8272 ic 8250
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BPV11 BPV11 D-74025 20-May-99 ic 8272 ic 8250 | |
Contextual Info: BPV11F www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times |
Original |
BPV11F BPV11F 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
BPV11Contextual Info: TELEFUNKEN Semiconductors BPV 11 Silicon NPN Phototransistor Description BPV11 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. Due to its waterclear epoxy lens the device is sensitive to visible and near infrared radiation. |
Original |
BPV11 D-74025 | |
BPV11
Abstract: 8239 8249 an 8249 ic 8253
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BPV11 BPV11 D-74025 08-Mar-05 8239 8249 an 8249 ic 8253 | |
ic 8253
Abstract: IC AN 8249 BPV11
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BPV11 BPV11 08-Apr-05 ic 8253 IC AN 8249 | |
BPV11Contextual Info: BPV11 Vishay Semiconductors Silicon NPN Phototransistor Description BPV11 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. Due to its waterclear epoxy lens the device is sensitive to visible and near infrared radiation. |
Original |
BPV11 BPV11 D-74025 20-May-99 | |
Contextual Info: BPV11F VlSfrlAY Vishay Telefunken Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-13A plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters X p ^ 900nm . |
OCR Scan |
BPV11F BPV11F 900nm) 20-May-99 | |
Contextual Info: BPV11 VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPV11 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. Due to its waterclear epoxy lens the device is sensitive to visible and near infrared radiation. |
Original |
BPV11 BPV11 D-74025 25-Mar-04 | |
BPV11FContextual Info: BPV11F Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters l p 900nm . |
Original |
BPV11F BPV11F 900nm) D-74025 16-Oct-96 |