BSR14 Search Results

BSR14 SOT23

Abstract: bsr14 bsr13 BSR14,215
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSR13; BSR14 NPN switching transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 13 NXP Semiconductors Product data sheet NPN switching transistors BSR13; BSR14 FEATURES PINNING • High current max. 800 mA

BSR14

Abstract: BSR13 transistor npn U8 sot23 marking u8
Contextual Info: Transistors IC SMD Type NPN Switching Transistors BSR13,BSR14 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low voltage max. 40 V . 1 0.55 High current (max. 800 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1

BSR14

Abstract: BSR13 BSR15 BSR16
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSR13; BSR14 NPN switching transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 13 NXP Semiconductors Product data sheet NPN switching transistors BSR13; BSR14 FEATURES PINNING • High current max. 800 mA

Contextual Info: Transistors IC SMD Type Product specification BSR13,BSR14 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low voltage max. 40 V . 1 0.55 High current (max. 800 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

sot23 marking u8

Abstract: BSR15 BSR16 BP317 BSR13 BSR14
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D088 BSR13; BSR14 NPN switching transistors Product specification Supersedes data of 1997 Apr 22 1999 Apr 15 Philips Semiconductors Product specification NPN switching transistors BSR13; BSR14 FEATURES PINNING

BSR13

Abstract: BSR14 BSR13R BSR14R RFT-300
Contextual Info: BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors Marking BSR13 = U 7 BSR14 = U8 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0_ 2.8 0.48 0.38 0 .1 4 3 Pin configuration 2.6 2 .4 1 = BASE 2 = EMITTER 3 = COLLECTOR J.02 0.60 0.40

c546b

Abstract: c557b of bc 237 b C547B c558b BC 9014 ba W61C c 557b 082BC w61b
Contextual Info: NPN General Purpose Amplifiers & Switches Device No. [Mark] B C W65C [ED ] Case Style TO-236 49 V CEO (V) Min 32 B C X 58 TO-92 (97) 32 BSR14 [U8] TO-236 (49) 40 V CBO VCES* (V) Min 60 75 V EBO (V) Min 5 I CBO ICES* (nA) Max 20* @ VCB (V) 32 TO-236 (49)

bf255

Contextual Info: BSR14 NPN General Purpose Amplifier Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. • Sourced from Process 19. • See BCW65C for characteristics. C E SOT-23 B Mark:U8 Absolute Maximum Ratings*

BSR13

Abstract: BSR14 CBO10
Contextual Info: 711 G a e b 0 0 ^ 5 3 5 2 bfl PHIN BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTO RS N-P-N silicon transistors, in a microminiature plastic envelope intended for switching and linear appli­ cations in thick and thin-film circuits. QUICK R EF ER E N C E DATA

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BSR13 = U7 BSR14 = U8 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

BSR13

Abstract: BSR14 BSR13R
Contextual Info: BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N Silicon transistors Marking BSR13 = U7 BSR14 = U8 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.70 0.50 Pin configuration 1 = BASE 2 * EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS BSR13_ BSR 14

BSR14

Abstract: BSR13 IC ti 072 sot23 marking u8
Contextual Info: r Z Z SGS-THOMSON Ä 7 # MO IHimi<gra M gS BSR13 BSR14 SMALL SIGNAL NPN TRANSISTORS Type Marking BSR13 U7 BSR14 U8 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION

Mark T92

Contextual Info: This Pro Electron Series Material cr Ln CD b-1 b-1 ÜJ Pro Electron Surface Mount Bipolar Devices continued V *CES Device No. (SOT-23 Mark) a Copyrighted o □ -C a BSR14 (U8) Ln ID Case Style TO-236 (49) V 1 * ' ces ^C E O CBO (V) * *CBO (V) Min Min (nA)

BCW65C

Abstract: BSR14 SOT23 NE
Contextual Info: BSR14 BSR14 C E SOT-23 B Mark: U8 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See BCW65C for characteristics. Absolute Maximum Ratings* Symbol

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BSR13 = U7 BSR14 = U8 Pin configuration 1 = BASE 2 = EMITTER

sot-23 MARKING CODE ZA

Abstract: marking code VV transistors BSR13 BSR14 marx generator
Contextual Info: •I bbSB^Bl ODcfSSb"! bö4 H A P X N AI1ER P H IL IP S /D IS C R E T E BSR13 BSR14 b?E » SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope intended for switching and linear appli­ cations in thick and thin-film circuits.

BSR13

Abstract: BSR14 VBSR13 BSR13R U8 marking
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BSR13 = U7 BSR14 = U8 PACKAGE OUTLINE DETAILS

Contextual Info: BSR13 BSR14 L SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors M arking BSR13 = U7 BSR14 = U8 PACKAGE OUTLINE DETAILS A LL DIM ENSIONS IN m m 3.0 2.8 0.14 0.48 t 0.38 11 3 1 1 Pin configuration 1 = BASE 2 = EMITTER 3 » COLLECTOR 2A 11 _K02

bsr13

Abstract: bsr14
Contextual Info: BSR13 BSR14 SMALL SIGNAL NPN TRANSISTORS • ■ ■ ■ Type Marking BSR13 U7 BSR14 U8 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION AND SWITCHING PNP COMPLEMENTS ARE RESPECTIVELY

U8p TRANSISTOR

Abstract: BSR14 BSR13 u8p Transistor MARKING
Contextual Info: Philips Semiconductors Product specification NPN switching transistors BSR13; BSR14 FEATURES PINNING • High current max. 800 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Switching and linear applications.

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking

BCW65C

Abstract: BSR14
Contextual Info: BSR14 BSR14 C E SOT-23 B Mark: U8 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See BCW65C for characteristics. Absolute Maximum Ratings* Symbol

BSR13R

Contextual Info: BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTORS kacje intended fo r sw itch in g anrl linear a p p ii cations in th ic k and th in -fiim circuits. Q U IC K KE.F ERF.NCF: D A T A -BSR13 C o lk.T ior base voltaye ¡open e m itte r BSR14 v CB0 max. 60 75

IC 7403

Contextual Info: BSR14 BSR14 C E SOT-23 B Mark: U8 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See BCW65C for characteristics. Absolute Maximum Ratings* Symbol