BSX59 Search Results

bsx61

Abstract: BSX59
Contextual Info: Philips Semiconductors Product specification NPN switching transistors BSX59; BSX61 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • High-speed switching in industrial applications.

BSX59

Abstract: BSX60 BSX61 iC-lg 10MA B2450 silicon planar epitaxial transistors MAX4530
Contextual Info: BSX59 to 61 PHILIPS INTERNATIONAL St>E » • 7110ßHb 0042422 STl MPHIN “F 2 7 - Z 3 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-39 metal envelope with the collector connected to the case. The BSX59, BSX60 and BSX61 are primarily intended for very high speed core-driving purposes.

BSX59

Contextual Info: BSX59 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 45V 0.41 (0.016) 0.53 (0.021)

BSX59

Abstract: BSX61 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSX59; BSX61 NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 22 Philips Semiconductors Product specification NPN switching transistors

BSX59

Abstract: bu 11 apx BSX60 WE VQE 11 E WE VQE 24 E BSX61 silicon planar epitaxial transistors
Contextual Info: N AMER PHI LI PS/DISCRETE b'IE D • 0027^33 T37 I IAPX BSX59 to 61 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-39 metal envelope with the collector connected to the case. The BSX59, BSX60 and BSX61 are primarily intended for very high speed core-driving purposes.

BSX59

Abstract: BSX60 BSX61 TO-39 CASE 435-1824
Contextual Info: Bata Sheet BSX59 BSX60 BSX61 S e llllC D Iia U C IO i G O fp. NPN SILICON TRANSISTORS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR BSX59 series types are NPN Silicon Transistors designed for high speed switching

BSX59

Contextual Info: BSX59 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 45V 0.41 (0.016) 0.53 (0.021)

Contextual Info: N AMER PHILIPS/DISCRETE • LIE D bbS3^31 DD27T33 T37 BSX59 to 61 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-39 metal envelope with the collector connected to the case. The BSX59, BSX60 and BSX61 are primarily intended for very high speed core-driving purposes.

BSX59

Abstract: BSX60 BSX61 toilt MULLARD BSX59-Page MULLARD TRANSISTOR bay36
Contextual Info: BSX59 SILICON PLANAR EPITA X IA L N-P-N TRANSISTORS 3 ^ . ^ BSX6Q B S X 6 1 Silicon p la n a r epitaxial n -p ^ J fira n s is to rs intended fo r u se in v ery high speed c o re d riving applications QUICK R EFEREN CE DATA BSX 5 9 V ^ m ax. CBO V _ m ax. CEO

BSX69

Abstract: 2N3725 MOTOROLA BSX60 BAY38 BSX59 2N3725 BSX61 HA 7904
Contextual Info: M O T O R O L A SC XSTRS/R F 12E D I 131755»« QOflbSOb 7 | BSX59 BSX60 CASE 79-04, STYLE 1 TO-39 TQ-205AD M A X IM U M RATINGS S ym b o l BSX 59 C ollector-E m itter Voltage VCEO 45 30 Vdc C ollector-E m ltter Voltage VC ES 60 60 Vdc Collector-Base Voltage

Contextual Info: BSX59 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 45V 0.41 (0.016) 0.53 (0.021)

tube az2

Abstract: 2n2389 2n2906 sis BSS68 BSW41 2N2369 2N2906 to92 BFX34 BSS38 BSW41A
Contextual Info: Transistors Type No. g s 3 o Drawing reference silicon low/medium power switching transistors book 1 parts 1 and 2 VCEJO VcEO <V V) Maximum Ratings IcM lc(AV) (mA) ImA) Hfe min. max. Ptot at 25°C (°C) <mW) Tj at •c fT VcE(sat) min. max. (mA) (MHz) (V)

transistor t2a

Abstract: 2n2206 TRANSISTOR ztx312 transistor 2N2475 N706A BSX12 2N2206 J 2N2369 BSV24 BSV25
Contextual Info: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics M axim um Ratings Type No. v CBO VCER Vebo P to t 25°C smb. fT min. Storajje Time t s ( i nax.) at l c mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200

BD320C

Abstract: 2N3725 tip122 tip127 BD321A TlPl22 2N3261 2N3512 2N3724 BD320A BD320B
Contextual Info: CORE DRIVERS TABLE 9 - N P N SILICON PLANAR HIGH SPEED CORE DRIVER TRANSISTORS The devices shown in this table are designed fo r use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is o f prime importance.

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

MM4003

Abstract: 2N4033 2N2905 BC177 2N3495 2N5680 transistor 2N4033 2N3227 2N3506 2N3725
Contextual Info: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

Katalog CEMI

Abstract: OA81 diode byp 660-50r Philips BC147 p 181 transoptor Mullard oa81 Hitachi 12V MS 5A-181 OA81 BA102 diode telefunken hr 780 rds
Contextual Info: WSTIJP W ydaw nictw a Przem yslu M aszynowego WEMA przekazujq uzytkow nikom branzow y katalog pt. E l e m e n t y pólp rz e w o d n i k o w e , zaw ierajqcy dokladne inform acje techniczne dotycz^ce elem entów pólprzew odnikow ych produkow anych w Polsce n a skal^ przem yslow ^. W szystkie w yroby

KD502

Abstract: KU607 KU605 KFY18 KD503 KF517 KC507 KU608 KD3055 KFY46
Contextual Info: N lZ K O F R E K V E N C N l t r a n z i s t o r y n -p -n M e zn i hodnoty Typ h 21E h2/i>* le so p ii U c b max U cb V Uce V 101N U70 102N U70 103N U70 104N U70 10 20 20 20 20 25 25 25 105N U70 106N U70 107N U70 32 32 32 3 0 ’ 3 0 ') 30') 10 10 10 101NU71

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

Contextual Info: small signal Transistors D ESCR IPTIO N Vc b O VC EO v EB O V (V) (V) *V C ER hFE 'C B O v C B O ftiA ) (V) @ lc (m A) (V) m TY P E NO. < o T O -39 Case V C E (S A T) ® *C (V) (m A) *>CEO h C0 b ton toff NF (M H z) <PF) (ns) (ns) (dB ) *TY P *TY P