BT5089 Search Results

Contextual Info: IL CMBT5088 BT5089 NPN SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm M ark in g C M BT5088 = 1Q CM BT5089 = 1R _3.0 2.8 0.14 0.48 0.38 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR

BT5089

Abstract: GMBT5089
Contextual Info: 1/2 GM BT5089 NP N E PITAXI AL P L ANAR T RANS ISTO R Description The BT5089 is designed for low noise, high gain, general purpose amplifier applications. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0.10

Contextual Info: MOTOROLA 6367254 "Üä SC Í X S T R S / R FJ M OT O RO L A SC CXSTRS/R M A XIM U M RATINGS »F|t:3t,7ES4 ODflSDMô S J"~ F 96D 8 2 0 4 8 1 T'Z9'/5 Value Sym bol M M BT5088 M M BT5089 Unit Collector-Emitter V oltage v CEO 30 25 V dc Collector-Base V oltage

BT5401

Contextual Info: Transistors Reel = 500pcs, Bag = lOOpcs. SOT23 Case NPN T ype m iniR eel O rd e r N um ber N P N H ig h F req u en cy BF840 73-8400 BF841 73-8410 M M BTH 10 73-0010 M M BT918 73-0918 N P N L ow N ise M M BT5089 73-5089 M M BT5088 73-5088 BC850B 73-8501 B C850C

Contextual Info: N AUER PHILIPS/DISCRETE 25E D • ^53*131 a01b341 3 ■ Surface Mount Devices LOW-NOISE TRANSISTORS NF hFE t y p .a t lc dB pA mln/max* at I c ^ C E mA/V RATINGS TYPE P ACK A G E VCEO V Vc b O V •c mA : VCE sat max. at lc % V mA/mA h typ. MHZ PINOUT 5 SEE

BTS089

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistors NPN Silicon MMBT5088LT1 BT5089LT1* C O L LE C T O R 3 'Motorola Preferred Device % MAXIMUM RATINGS Rating Sym bol 5088LT1 5089LT1 Unit Collector-Em itter Voltage VCEO 30 25 Vdc C o lle c to r-B a s e Voltage

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

5089

Abstract: N5088 2n 5088 transistor c 5088 DS21 603 marking 2N5088 2N5089 MMBT5088 MMBT5089
Contextual Info: 2N5088/5089 / MMBT5088/5089 VISHAY NPN SMALL SIGNAL TRANSISTORS /Li T E M I ri / POWERSEMICONDUCTOR I Features MMBT5088 / BT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier

2N508B

Abstract: 2N5088 national 2N5089 NATIONAL SEMICONDUCTOR 2N5088 2N5089 MMBT5088 MMBT5089 T092 LS5911
Contextual Info: 2N5088 / MMBT5088 12N50891 BT5089 & D iscrete P O W ER & S ig n a l Techno logies National S e m i c o n d u c t o r " MMBT5088 BT5089 2N5088 2N5089 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1pA to 50 mA.

MSC1621

Abstract: Sj85a MRF9331 MMFT6661 2SD601R TLP655G cr708A 8C807-16 2SD601 R MBR931
Contextual Info: Alphanumeric Index and Cross Reference T he following table represents a cross-reference guide for surface mount packages which are m anufactured by Motorola. W here the M otorola part num ber differs from the industry part number, the M otorola device is a “form, fit and function" replacem ent for the

2SC9014

Abstract: BEC npn 2SC9013 SOT-23 BTA43 BTA70 BA811 2SC1623L6 BT3904 BTA42 BT5551
Contextual Info: SOT-23 SMD Products Photograph of Products: Performance and Characteristics: NPN Silicon General Purpose Power Transistors Type Ptot Ic VCEO mW (mA) (V) hFE Polar 123 Type Ptot Ic VCEO (mW) (mA) (V) hFE Polar 123 2SC1623L3 225 100 40 60～90 BEC BCW60A 225