BUL791 Search Results

BUL791

Contextual Info: BUL791 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric

Contextual Info: BUL791 NPN SILICON POWER TRANSISTOR Designed Specifically for High Frequency Electronic Ballasts up to 125 W hFE 6 to 22 at VCE = 1 V, IC = 2 A Low Power Losses On-state and Switching Key Parameters Characterised at High Temperature Tight and Reproducible Parametric

BUL791

Contextual Info: BUL791 NPN SILICON POWER TRANSISTOR Copyright 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High

Contextual Info: BUL791 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric

Contextual Info: BUL791 NPN SILICON POWER TRANSISTOR C o p y rig h t 1997, Power Innovations Limited, UK • Designed Specifically for High Frequency Electronic Ballasts up to 125 W • hFE 6 to 22 at V C e = 1 V , I c = 2 A • Low Power Losses On-state and Switching

Contextual Info: BUL791 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric

BUL791

Abstract: si 220 mh
Contextual Info: TflJUISYS BUL791 NPN SILICON POWER TRANSISTOR fUCTKONICS LIMITED • Designed Specifically for High Frequency Electronic Ballasts up to 125 W • hFE 6 to 22 at VCE = 1 V, lc = 2 A • Low Power Losses On-state and Switching • Key Parameters Characterised at High

BUL791

Contextual Info: BUL791 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric

TIC106D equivalent

Abstract: TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent
Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers

DK53

Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
Contextual Info: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240

BUL791

Abstract: BULD125KC TO-5 PACKAGE case for transistor
Contextual Info: c f AN SYS BULD125KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE IUCTROMICS LIMITED Designed Specifically for High Frequency Electronic Ballasts Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability Diode t rr Typically 1 TO-220 PACKAGE TOP VIEW

TIC106M SCR

Abstract: TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC126D equivalent TIC116D equivalent
Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers

equivalent transistor bul128

Abstract: HALL EFFECT 21E equivalent of transistor 2sc4106 2sC2335 TRANSISTOR equivalent Shortform Transistor Guide BUL208 BUF656B KSE13007 equivalent BUD620 BUL128 replacements
Contextual Info: Bipolar Power Transistors Data Book 1997 General Information Data Sheets Addresses Table of Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DK53

Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Contextual Info: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240