BUT11 Search Results

by205

Abstract: BY205-400 diode by205 2n2222 transistor pin b c e by205 diode BUT11 D44H11 2N2222 2N2904 D45H11
Contextual Info: BUT11 NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 100 W at 25°C Case Temperature ● 5 A Continuous Collector Current TO-220 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA

BUT11F

Abstract: DSA002309 silicon transistor npn 395 BUT11
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT11F • DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS Ta=25℃

d 42030 transistor

Abstract: AN-7505 220v ac to 48v dc smps AN3008 Fairchild crt horizontal deflection circuit AN-7528 9019 transistor FAN6800 BUT11A spice AN817
Contextual Info: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units V Collector-Base Voltage : BUT11 : BUT11A

BUT11A1

Abstract: BUT-11 BUT11A CIRCUIT BUT11 BUT11A
Contextual Info: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11 : BUT11A 850 1000 V V Collector-Emitter Voltage

BUT11AF

Abstract: 150v power diode
Contextual Info: BUT11AF SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. TO-220F QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BUT11A Features Lead Free Finish/RoHS Compliant Note1 ("P" Suffix designates • • • • • • NPN Silicon

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BUT11A Features • • • • High voltage, high speed NPN power transistors. With TO-220 package Intended for use in converters, inverters, switching regulators, motor

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BUT11A Features • • • • • Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates RoHS Compliant. See ordering information)

BUT11A CIRCUIT

Abstract: BUT11
Contextual Info: BUT11/11A NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector Base Voltage Rating Unit 850 V 1000 V 400 V VcES : BUT11 Collector Emitter Voltage Emitter Base Voltage : B UT11A : BUT11

BUT11AX

Abstract: BUT11F
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11F GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc.

Contextual Info: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS ■ DESCRIPTION

Contextual Info: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: ■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION

TRANSISTOR 3360

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT11AF Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use In line operated switching power supplies in a w ide range of end use applications. This device com bines the latest state of the art

SO402DH

Abstract: SO402MH scr battery charger SO402 BU801 scr so402mh ICC01 tip50 darlington high voltage darlington TYN425
Contextual Info: IGNITION RECOMMENDED DEVICES HOME HEATING SCOOTERS Type TIP50 TIP54 BUT11A FLC02 Function High Voltage TR in TO-220 High Voltage TR in TO-218 High Voltage TR in TO-220 ASD Fuel Ignitor Control in SOT-82/SOT-194 LAWNMOWER Type BU801 BU900TP ICC03 ICC01 Function

by205

Abstract: BUT11 BY205-400 2N2222 2N2904 D44H11 D45H11 transistor d44h11
Contextual Info: BUT11 NPN SILICON POWER TRANSISTOR Copyright 1997, Power Innovations Limited, UK ● Rugged Triple-Diffused Planar Construction ● 100 W at 25°C Case Temperature ● 5 A Continuous Collector Current MAY 1989 - REVISED MARCH 1997 TO-220 PACKAGE TOP VIEW

BUT11A

Abstract: 970725
Contextual Info: 970725 01 SIDA: 1/8 ELFA artikelnr. 71-056-95 BUT11A Switchtrans.TO220 970725 01 SIDA: 2/8 970725 01 SIDA: 3/8 970725 01 SIDA: 4/8 970725 01 SIDA: 5/8 970725 01 SIDA: 6/8 970725 01 SIDA: 7/8 970725 01 SIDA: 8/8

Contextual Info: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS s t ■

Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUT11F GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc.

transistor BUT

Abstract: 11apx transistor Transistor Vb TRANSISTOR K 135 J 50 silicon transistor npn 395 bsat
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional

but11a

Abstract: but 11 BUT-11 transistor but 11a BUT11
Contextual Info: Product specification Philips Semiconductors BUT11; BUT11A Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-22QAB package. APPLICATIONS • Converters • Inverters • Switching regulators

Contextual Info: BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11F : BUT11AF 850 1000 V V

2n2222 transistor pin b c e

Abstract: by205 2n2222 h parameter values BUT11
Contextual Info: BUT11 NPN SILICON POWER TRANSISTOR Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature TO-220 PACKAGE TOP VIEW 5 A Continuous Collector Current This series is currently available, but not recommended for new designs. B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base.

BUT11APX

Abstract: BUT11APX-1200 BUT11
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUT11APX-1200 Silicon Diffused Power Transistor Product specification April 1999 1;3 Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX-1200 GENERAL DESCRIPTION Enhanced performance new generation,high voltage, high-speed switching npn transistor in a plastic full-pack

BUT11A Switching regulators

Abstract: BUT11A CIRCUIT NPN switching power transistor npn switching transistor Ic 5A BUT11A but11a isc
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT11A DESCRIPTION •High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS Ta=25℃