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    BUZ900D Search Results

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    BUZ900D Price and Stock

    TT Electronics Power and Hybrid / Semelab Limited BUZ900D

    Mosfet, N Channel, 160V, 16A, To-3; Channel Type:N Channel; Drain Source Voltage Vds:160V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; Msl:- Rohs Compliant: Yes |Tt Electronics/semelab BUZ900D
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    BUZ900D Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUZ900D Magnatec N-CHANNEL POWER MOSFET Original PDF
    BUZ900D Magnatec Silicon N-Channel Power Mosfet Scan PDF
    BUZ900D Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ900DP Magnatec N-CHANNEL POWER MOSFET Original PDF
    BUZ900DP Magnatec N-channel Power Mosfet Original PDF

    BUZ900D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUZ900D

    Abstract: BUZ901D BUZ905d equivalent BUZ906D BUZ906d equivalent BUZ905D
    Text: BUZ900D BUZ901D MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING


    Original     		PDF BUZ900D BUZ901D BUZ905D BUZ906D BUZ900D BUZ901D BUZ905d equivalent BUZ906D BUZ906d equivalent BUZ905D

    Untitled

    Abstract: No abstract text available
    Text: BUZ900D Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)160 V(BR)GSS (V) I(D) Max. (A)16.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)16.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250# Minimum Operating Temp (øC)-55


    Original     		PDF BUZ900D

    Untitled

    Abstract: No abstract text available
    Text: BUZ900D BUZ901D MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING


    Original     		PDF BUZ900D BUZ901D BUZ905D BUZ906D

    buz901dp

    Abstract: No abstract text available
    Text: BUZ900DP BUZ901DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 N–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 2.0 • N–CHANNEL POWER MOSFET 1.0 • SEMEFAB DESIGNED AND DIFFUSED


    Original     		PDF BUZ900DP BUZ901DP BUZ905DP BUZ906DP buz901dp

    BUZ901D

    Abstract: BUZ901DP 100-C1210 BUZ901 BUZ900D BUZ900DP BUZ905DP BUZ906DP High speed double Drain MOSFET A6V14
    Text: BUZ900DP BUZ901DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 N–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 2.0 • N–CHANNEL POWER MOSFET 1.0 • SEMEFAB DESIGNED AND DIFFUSED


    Original     		PDF BUZ900DP BUZ901DP BUZ905DP BUZ906DP BUZ901D BUZ901DP 100-C1210 BUZ901 BUZ900D BUZ900DP BUZ905DP BUZ906DP High speed double Drain MOSFET A6V14

    BUZ901P

    Abstract: BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410
    Text: STI Type: BUZ341 Notes: Breakdown Voltage: 200 Continuous Current: 33 RDS on Ohm: 0.07 Trans Conductance Mhos: 15 Trans Conductance A: 21 Gate Threshold min: 2.1 Gate Threshold max: 4.0 Resistance Switching ton: 60 Resistance Switching toff: 680 Resistance Switching ID: 3.0


    Original     		PDF BUZ341 O-247 BUZ344 BUZ346 O-204AA/TO-3: DTS409 DTS410 BUZ901P BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410

    Untitled

    Abstract: No abstract text available
    Text: BUZ905D BUZ906D MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 P–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING


    Original     		PDF BUZ905D BUZ906D BUZ900D BUZ901D

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


    Original     		PDF DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E

    BUZ906D

    Abstract: BUZ906DP BUZ905DP BUZ900DP BUZ906d equivalent BUZ901DP BUZ905D
    Text: BUZ905DP BUZ906DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 P–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 2.0 • P–CHANNEL POWER MOSFET 1.0 • SEMEFAB DESIGNED AND DIFFUSED


    Original     		PDF BUZ905DP BUZ906DP BUZ900DP BUZ901DP BUZ906D BUZ906DP BUZ905DP BUZ900DP BUZ906d equivalent BUZ901DP BUZ905D

    BUZ900

    Abstract: BUZ900P TO-3P BUZ900D BUZ902DP to-3 BUZ908DP BUZ901P BUZ905 SOT-227
    Text: Magnatec. Мощные комплиментарные полевые транзисторы для аудио техники Компания Magnatec является подразделением Semelab Официальный дистрибьютор SEMELAB в России - компания АПЕКС.


    Original     		PDF BUZ900 BUZ901 BUZ900D BUZ901D BUZ900P BUZ901P BUZ900DP BUZ901DP BUZ900X4S BUZ901X4S BUZ900 BUZ900P TO-3P BUZ900D BUZ902DP to-3 BUZ908DP BUZ901P BUZ905 SOT-227

    Untitled

    Abstract: No abstract text available
    Text: BUZ905DP BUZ906DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 P–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 2.0 • P–CHANNEL POWER MOSFET 1.0 • SEMEFAB DESIGNED AND DIFFUSED


    Original     		PDF BUZ905DP BUZ906DP BUZ900DP BUZ901DP

    BUZ906D

    Abstract: BUZ905D BUZ900 BUZ905d equivalent BUZ906d equivalent BUZ900D BUZ901D
    Text: BUZ905D BUZ906D MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 P–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING


    Original     		PDF BUZ905D BUZ906D BUZ900D BUZ901D BUZ906D BUZ905D BUZ900 BUZ905d equivalent BUZ906d equivalent BUZ900D BUZ901D

    BUZ900D

    Abstract: BUZ50ASM BUZ50B-220SM
    Text: SEMELAB pic Type_No BUZ45A BUZ46 BUZ50A BUZ50A-220M BUZ50A-220SM BUZ50A-220TM BUZ50A-T0220M BUZ50ASM BUZ50B BUZ50B-220M BUZ50B-220SM BUZ50B-T0220M BUZ50BSM BUZ60 BUZ60B BUZ63 BUZ64 BUZ71 BUZ71A BUZ72A BUZ74 BUZ74A BUZ76 BUZ84 BUZ900 BUZ900D BUZ900DP BUZ900P


    OCR Scan     		PDF BUZ45A BUZ46 BUZ50A BUZ50A-220M BUZ50A-220SM BUZ50A-220TM BUZ50A-T0220M BUZ50ASM BUZ50B BUZ50B-220M BUZ900D BUZ50B-220SM

    n-channel 250w power mosfet

    Abstract: No abstract text available
    Text: BUZ900D BUZ901D IVI A CB INI A M ECHANICAL DATA N-CHANNEL POWER MOSFET Dimensions in mm POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V • HIGH ENERGY RATING


    OCR Scan     		PDF BUZ900D BUZ901D BUZ905D BUZ906D BUZ900D n-channel 250w power mosfet

    HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET

    Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
    Text: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED


    OCR Scan     		PDF BUZ905D BUZ906D -100mA -160V -200V HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D

    buz906dp

    Abstract: No abstract text available
    Text: BUZ905DP BUZ906DP M ECHANICAL DATA Dimensions in mm P-CHANNEL POWER MOSFET 5 .C POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V) • HIGH ENERGY RATING


    OCR Scan     		PDF BUZ905DP BUZ906DP BUZ900DP BUZ901DP buz906dp

    BUZ MOSFET

    Abstract: No abstract text available
    Text: bOE D 3133107 SEMELAB PLC G0GDS42 2G3 • SMLB - " T S f l - Z 5 r r MAGNA TEC BUZ 905D BUZ 906D NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SWITCHING


    OCR Scan     		PDF G0GDS42 BUZ900D BUZ901D BUZ905D BUZ906D BUZ MOSFET

    BUZ MOSFET

    Abstract: No abstract text available
    Text: bDE D I 5133107 000D530 ST 1 • S M L B SEMELAB PLC prpr M A G N A r^ t e c BUZ 9 0 0 BUZ 901 NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FO R USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SWITCHING


    OCR Scan     		PDF 000D530 BUZ905 BUZ906 BUZ900D BUZ905D BUZ901D BUZ906D BUZ MOSFET

    Untitled

    Abstract: No abstract text available
    Text: bDE D • 0133107 Q000533 ETG ■■ SULB SEMELAB PLC p rp r ''T'3cM S M A G IMA r^ tec BUZ 9 0 0 D b u z s o id NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICA TION FEATURES


    OCR Scan     		PDF Q000533 BUZ905D BUZ906D 300jiS BUZ900D BUZ901D

    Untitled

    Abstract: No abstract text available
    Text: bOE ]> • SEHELAB 0133107 □□□G53‘ì 711 ■SMLB PLC r r rT ' - ' 3 ^ ' Z 3 M A Gl\IA TEC BUZ 9 0 5 b u z 90S NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES


    OCR Scan     		PDF BUZ900 BUZ901 BUZ900D BUZ905D BUZ901D BUZ906D

    2SJ56

    Abstract: 2SJ50 equivalent 2SJ56 equivalent 2SKI76 BUZ90QP BUZ90I BUZ90IP z901 BUZ90S 2SJ568
    Text: Magnatec Engineering Distribution M agnatec - lateral M O S F E T s for the audio m arket M ag n a tec , a co m p an y w ith in th e S e m e la b G ro u p , in tro d u c e s a ran g e o f c o m p le m e n ta ry lateral M O S F E T pow er transistors. Supplied in a range of outlines, the 8/16Amp,


    OCR Scan     		PDF 8/16Amp, 160/200Voit BUZ900D BUZ90QP BUZ90I Z901/906 2SJ162 2SJ56 2X2SJ56 USPI6N20 2SJ56 2SJ50 equivalent 2SJ56 equivalent 2SKI76 BUZ90I BUZ90IP z901 BUZ90S 2SJ568

    BUZ905D

    Abstract: No abstract text available
    Text: BUZ905D BUZ906D IVI A CB INI A MECHANICAL DATA Dimensions in mm P-CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V • HIGH ENERGY RATING


    OCR Scan     		PDF BUZ905D BUZ906D BUZ900D BUZ901D