BYG23M Search Results
BYG23M Datasheets (16)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| BYG23M | Vishay Intertechnology | Fast Silicon Mesa SMD Rectifier | Original | 80.09KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYG23M-E3/TR | Vishay Semiconductors | Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE AVALANCHE 1KV 1.5A DO214AC | Original | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYG23M-E3/TR3 | Vishay Semiconductors | Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE AVALANCHE 1KV 1.5A DO214AC | Original | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYG23MH |
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65NS, 1.5A, 1000V, HIGH EFFICIEN | Original | 509.05KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYG23MHE3_A/H | Vishay Semiconductor Diodes Division | Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE AVALANCHE 1KV 1.5A DO214AC | Original | 94.14KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYG23MHE3_A/I | Vishay Semiconductor Diodes Division | Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE AVALANCHE 1KV 1.5A DO214AC | Original | 94.14KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYG23MHE3/TR | Vishay Semiconductors | Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE AVALANCHE 1KV 1.5A DO214AC | Original | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYG23MHE3/TR3 | Vishay Semiconductors | Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE AVALANCHE 1KV 1.5A DO214AC | Original | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYG23MHM3_A/H | Vishay Semiconductor Diodes Division | Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE AVALANCHE 1KV 1.5A DO214AC | Original | 92.29KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYG23MHM3_A/I | Vishay Semiconductor Diodes Division | Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE AVALANCHE 1KV 1.5A DO214AC | Original | 92.29KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYG23MHM3/TR | Vishay Semiconductors | Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE AVAL 1.5A 1000V DO-214AC | Original | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYG23MHM3/TR3 | Vishay Semiconductors | Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE AVAL 1.5A 1000V DO-214AC | Original | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYG23M M2G |
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Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GEN PURP 1.5A DO214AC | Original | 377.37KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYG23M-M3/TR | Vishay Semiconductors | Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE AVAL 1.5A 1000V DO-214AC | Original | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| BYG23M-M3/TR3 | Vishay Semiconductors | Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE AVAL 1.5A 1000V DO-214AC | Original | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BYG23M R3G |
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Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GEN PURP 1.5A DO214AC | Original | 377.37KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BYG23M Price and Stock
Taiwan Semiconductor BYG23MH65NS, 1.5A, 1000V, HIGH EFFICIEN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BYG23MH | Cut Tape | 14,738 | 1 |
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BYG23MH | Reel | 13 Weeks | 15,000 |
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BYG23MH |
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BYG23MH | 1 |
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Vishay Semiconductors BYG23M-M3-TR3DIODE AVALANCHE 1KV 1.5A DO214AC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BYG23M-M3-TR3 | Cut Tape | 11,471 | 1 |
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Vishay Semiconductors BYG23MHM3_A-HDIODE AVALANCHE 1KV 1.5A DO214AC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BYG23MHM3_A-H | Digi-Reel | 10,800 | 1 |
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Taiwan Semiconductor BYG23MDIODE GEN PURP 1.5A DO214AC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BYG23M | Cut Tape | 7,860 | 1 |
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BYG23M | Reel | 13 Weeks | 15,000 |
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Buy Now | |||||
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BYG23M | 17,704 |
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BYG23M | 1 |
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BYG23M | 7,500 | 8 Weeks | 7,500 |
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BYG23M | 7,500 | 1 |
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Buy Now | ||||||
Vishay Semiconductors BYG23MHE3_A-HDIODE AVALANCHE 1KV 1.5A DO214AC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BYG23MHE3_A-H | Cut Tape | 6,146 | 1 |
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BYG23M Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: BYG23M www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time |
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BYG23M J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC DO-214AC 2011/65/EU 2002/95/EC. 2011/65/EU. | |
vishay MARKING UM SMA
Abstract: byg23m-e3 BYG23M DO-214AC SMA um 1a vishay JESD22-B102 J-STD-002 vishay smd diode code marking vishay smd diode UM vishay MARKING UM
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BYG23M J-STD-020, DO-214AC 2002/95/EC 2002/96/EC 11-Mar-11 vishay MARKING UM SMA byg23m-e3 BYG23M DO-214AC SMA um 1a vishay JESD22-B102 J-STD-002 vishay smd diode code marking vishay smd diode UM vishay MARKING UM | |
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Contextual Info: BYG23M www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time |
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BYG23M J-STD-020, DO-214AC AEC-Q101 2002/95/EC 2002/96/EC 11-Mar-11 | |
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Contextual Info: BYG23M Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time • Meets MSL level 1, per J-STD-020, LF maximum |
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BYG23M DO-214AC J-STD-020, 2002/95/EC 2002/96/EC J-STD-002 08-Apr-05 | |
vishay smd diode UM
Abstract: DO-214 smd diode smd diode UM 08
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BYG23M BYG23M DO-214AC 08-Apr-05 vishay smd diode UM DO-214 smd diode smd diode UM 08 | |
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Contextual Info: BYG23M www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time |
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BYG23M J-STD-020, DO-214AC AEC-Q101 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A | |
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Contextual Info: BYG23M www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated pallet chip junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time |
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BYG23M J-STD-020, DO-214AC AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
tsal62
Abstract: ir tsal62
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BYG23M DO-214AC BYG23M DO-214AC 15-Sep-04 tsal62 ir tsal62 | |
smd diode UM 09
Abstract: BYG23 smd diode vishay UM 09
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BYG23M BYG23M 125K/W 175K/W 09-Oct-00 smd diode UM 09 BYG23 smd diode vishay UM 09 | |
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Contextual Info: BYG23M www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time |
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BYG23M J-STD-020, DO-214AC AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: BYG23M www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time |
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BYG23M J-STD-020, DO-214AC AEC-Q101 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. | |
BYG23M
Abstract: JESD22-B102D J-STD-002B TR3 Marking
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BYG23M DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 BYG23M JESD22-B102D J-STD-002B TR3 Marking | |
vishay MARKING UM SMAContextual Info: BYG23M Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time DO-214AC SMA |
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BYG23M DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 vishay MARKING UM SMA | |
BYG23MContextual Info: BYG23M Vishay Telefunken Fast Silicon Mesa SMD Rectifier Features D D D D D Glass passivated junction Low reverse current High reverse voltage Fast reverse recovery time Wave and reflow solderable Applications 15 811 Freewheeling diodes in SMPS and converters |
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BYG23M D-74025 13-Aug-99 BYG23M | |
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Contextual Info: BYG23M Taiwan Semiconductor CREAT BY ART FEATURES High Efficient Surface Mount Rectifiers - Glass passivated junction chip. - Ideal for automated placement - Fast switching for high efficiency - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 |
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BYG23M J-STD-020 2011/65/EU 2002/96/EC DO-214AC JESD22-B102 D1309034 | |
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Contextual Info: BYG23M www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time |
Original |
BYG23M J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC DO-214AC 2011/65/EU 2002/95/EC. 2011/65/EU. | |
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Contextual Info: BYG23M www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time |
Original |
BYG23M J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC DO-214AC 11-Mar-11 | |
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Contextual Info: BYG23M Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time • Meets MSL level 1, per J-STD-020C |
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BYG23M J-STD-020C 2002/95/EC 2002/96/EC DO-214AC J-STD-002B JESD22-B102D 08-Apr-05 | |
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Contextual Info: BYG23M Vishay Telefunken Fast Silicon Mesa SMD Rectifier Features D D D D D Glass passivated junction Low reverse current High reverse voltage Fast reverse recovery time Wave and reflow solderable Applications 15 811 Freewheeling diodes in SMPS and converters |
Original |
BYG23M D-74025 09-Aug-99 | |
vishay MARKING UM SMA
Abstract: vishay smd diode code marking BYG23M byg23 JESD22-B102 J-STD-002 BYG23ME3-TR
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BYG23M J-STD-020, DO-214AC 2002/95/EC 2002/96/EC 18-Jul-08 vishay MARKING UM SMA vishay smd diode code marking BYG23M byg23 JESD22-B102 J-STD-002 BYG23ME3-TR | |
BYG23Contextual Info: BYG23M VISHAY Vishay Semiconductors Ultrafast Avalanche SMD Rectifier Features • • • • • Glass passivated junction Low reverse current High reverse voltage Fast reverse recovery time Wave and reflow solderable Applications Freewheeling diodes in SMPS and converters |
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BYG23M BYG23M conditio16 125K/W 175K/W 07-Jan-03 BYG23 | |
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Contextual Info: BYG23M www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated pallet chip junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time |
Original |
BYG23M J-STD-020, DO-214AC AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: BYG23M Taiwan Semiconductor CREAT BY ART FEATURES High Efficient Surface Mount Rectifiers - Glass passivated junction chip. - Ideal for automated placement - Fast switching for high efficiency - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 |
Original |
BYG23M J-STD-020 2011/65/EU 2002/96/EC DO-214AC JESD22-B102 D1309034 | |
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Contextual Info: BYG23M www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time |
Original |
BYG23M J-STD-020, DO-214AC AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |