C12CJ Search Results

Contextual Info: _ 3DE D • 7 C12CJ237 OOBlbOH 7 ■ ' Y rL S ~ IS' SGS-THOMSON mOMSON ilL iO T « ! B T A /B T B 0 6 A S G S-TH0MSÔN SENSITIVE GATE TRIACS GLASS PASSIVATED CHIP Ig t SPECIFIED IN FOUR QUADFIANTS AVAILABLE IN INSULATED VERSION -> BTA SERIES INSULATING VOLTAGE

TRIAC BTA-SERIES

Abstract: bta 700 BTA 18 800
Contextual Info: _ m 3DE D r z 7 Ä T # _ ~T'-'ZS?'\5 7 C12CJ237 OÜBlbCm 7 • S C S - T H O M S O N M û Iï t L iig T m « ! B T A /B T B 0 6 A S G S-THOMSON SENSITIVE GATE TRIACS GLASS PASSIVATED CHIP I g t SPECIFIED IN FOUR QUADRANTS AVAILABLE IN INSULATED VERSION ->

CC15C

Abstract: ESM3045DF
Contextual Info: 30E D • 7 C12CJ 2 3 7 GG3GM4M S C S -T H O M S O N G *^ »i(gTT[iM O (gS t. ■ E S M 3 0 4 5 DF E S M 3 0 4 5 DV S-THOMSON "~p33> NPN DARLINGTON POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW Rth JUNCTION CASE ■ SPECIFIED ACCIDENTAL OVERLOAD

Contextual Info: S G S'IC S -T H Q M SO N . 59C D I 7 C12CJ237 02713 O THOMSON-CSF ÜGG2713 D T-GMP5/5A/5B DIVISION SEMICONDUCTEURS UNIDIRECTIONAL TRAN SIEN T VOLTAGE SU PPRESSO RS DIOD ES D E PROTECTION UNIDIRECTIONNELLES TRANSIL Pp : 60OW/1ms expo. 7,2kW/8-20^s expo. TRANSIENT VOLTAGE SUPPRESSOR DIODES ESPECIALLY

BTA SERIES

Contextual Info: 3DE D f Z Ä T m 7 C12CJ237 OÜBlbCm 7 • 7 S G S -T H O M S O N # M û Iï t L iig T m _ ~ T ' - ' Z S ? ' \ 5 « ! B T A /B T B 0 6 A S G S-THOMSON SENSITIVE GATE TRIACS GLASS PASSIVATED CHIP I g t SPECIFIED IN FOUR QUADRANTS AVAILABLE IN INSULATED VERSION ->

M74HC00

Contextual Info: Sb E G Z T> m 7^2^237 DG3T73D S'ìD • S G T H S C S -T H O M SO N HD»I[L[l RiO gi s G S-THÖHS0N M54HCÖÖ M74HC00 T -*i3 -Z ( QUAD 2-INPUT NAND GATE ■ HIGH SPEED tpD = 8 ns (TYP. at Vcc = 5V ■ LOW POWER DISSIPATION Ice = 1 i*A (MAX.) at Ta = 25°C

Contextual Info: S G S -T H O M S O N R H O T «! rz 7 ^ 7# V N 03 ISO HIGH SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA TYPE VN03 V d ss R D S o n In D V cc 60 V 0.5 n 0.7 A 26 V . MAXIMUM CONTINUOUS OUTPUT CURRENT (#): 4 A @ Tc= 85°C . 5V LOGIC LEVEL COMPATIBLE INPUT

BTW 600

Abstract: 69-N
Contextual Info: / ^ T S C S -TH O M S O N ^ 7 Mt MttOiiuiigiiwifflniei BTW 69 N SCR FEATURES • ■ ■ ■ HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY BTW69 Serie: INSULATED VOLTAGE = 2500V(RMS) (UL RECOGNIZED: E81734) DESCRIPTION The BTW 69 (N) Family of Silicon Controlled Recti­

g0712

Abstract: ST24LC21 chip 8-pin t24 400KHZ scl 11z
Contextual Info: 7 7 S G S -T H O M S O N V # .' K iilD g ^ ( S i( L i( g ìK R !lD © Ì ST24LC21 DUAL MODE SERIAL ACCESS 1K (128 x 8) EEPROM PRODUCT PREVIEW • ■ ■ ■ ■ ■ ■ ■ ■ 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION 2.5V to 5.5V SINGLE SUPPLY VOLTAGE

Contextual Info: Æ # ^ 7 i. S G S -1 H 0 M S 0 N ST62T08 D ïilD Ê IM llIL liÊ in M llI 8-BIT OTP MCUs PRELIM INARY DATA • ■ ■ ■ ■ ■ ■ 3.0 to 6.0V Supply Operating Range 8 MHz Maximum Clock Frequency -40 to +85°C Operating Temperature Range Run, Wait and Stop Modes

M3493C1

Abstract: UG31
Contextual Info: SbE ]> • 7^2^537 OOB'JOAa T30 ■ S 6 T H _ S G S -T H O M S O N i* ^ o m i( g 1 M $~G K 7= -7$w /-i/ S M 3 4 9 3 S-TH0HS0N CMOS 1 2 X 8 CROSSPOINT WITH CONTROL MEMORY ■ LOW ON RESISTANCE (typ. 40 Q at V d d = 10 V ■ INTERNAL CONTROL LATCHES ■ ANALOG SIGNAL SWING CAPABILITY EQUAL

ic 4060 pin configuration diagram

Contextual Info: SbE » • 7^2^237 0Q40401 72T ■ S G T H Æ 7 S C S -T H O M S O N A 7f [ « [ M m i H g r a & œ S S M 54H C 4060 M 74H C 4060 G S-THOMSON 14-STAGE BINARY COUNTER/OSCILLATOR ■ HIGH SPEED f M A X = 60 MHz TYP at VCC = 5V ■ LOW POWER DISSIPATION

Contextual Info: r z T SGS-THOMSON Ä 7# M54HC298 M74HC298 QUAD 2 CHANNEL MULTIPLEXER/REGISTER • HIGHSPEED fM A X = 73 MHz typ. AT Vcc = 5 V ■ LOW POWER DISSIPATION Icc = 4 nA (MAX.) AT T a = 25 "C ■ HIGH NOISE IMMUNITY V nih = V nil = 28 % Vcc (MIN.) ■ OUTPUT DRIVE CAPABILITY

Contextual Info: SEE » • TTSIEB? 0036432 723 ■SGTH 7 ^ ^ - Z 3 - /V SGS-THOMSON M46Z256 M46Z256Y iIUira RDDgi S G S-TH0HS0N CMOS 256K x 16 ZEROPOWER SRAM PRELIMINARY DATA ■ INTEGRATED LOW POWER SRAM, POWER­ FUL CONTROL CIRCUIT AND BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIM­

BYW 70

Contextual Info: SGS-THOMSON M e œ iL ie ïG M e s BYW 08-50 200 HIGH EFFIC IEN CY FAST R EC O VER Y R ECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE CAPABILITY

stp53n06

Abstract: STP53 i237
Contextual Info: 7 ^ 2 3 7 OOMLSlfl 3Sfl • S 6 T H SGS-THOMSON S T P 5 3 N 06 ia j g « § N ^CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss R ds(oü Id STP53N06 60 V < 0.025 a 53 A Q • TYPICAL RDS(on) = 0.022 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED