C14043 Search Results

RX64

Abstract: MDP36 lr33300 BDLR4500 BDMR4011 LR4500 R4000 sca24 MDP21 MDP18
Contextual Info: MiniRISC LR4500 Superscalar Microprocessor Technical Manual ® Order Number C14043 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.

MC140448

Abstract: MC140438 MC140 14044b MC14044B 14043b MC14 MC14043B MC14XXXBCL MC14XXXBCP
Contextual Info: g C14043B MOTOROLA MC14044B CMOS MSI L SUFFIX CERAMIC CASE 620 QUAD R-S LATCHES The M C14043B and M C 14044B quad R -S latche*. w ith MOS P-channel and N-channel enhancement m single monolithic structure. Each latch has an indepc and set and reset inputs. The Q outputs are gatecl

Contextual Info: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1016CX www.vishay.com Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 -20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.50 Qg (TYP.) • High-side switching • Ease in driving switches

Contextual Info: Si1035X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 8 at VGS = - 4.5 V

Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400

Contextual Info: Si1072X Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) Qg (Typ.) 0.093 at VGS = 10 V 1.3a 1.2 5.41 0.129 at VGS = 4.5 V • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si1050X Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) () ID (A) 0.086 at VGS = 4.5 V 1.34a 0.093 at VGS = 2.5 V 1.29 0.102 at VGS = 1.8 V 1.23 0.120 at VGS = 1.5 V 0.7 Qg (Typ.) 7.1 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1034X Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated

Contextual Info: Si1073X Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.173 at VGS = - 10 V - 0.98a 0.243 at VGS = - 4.5 V - 0.83 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Contextual Info: Si1040X Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 RDS(on) () ID (A) 0.625 at VIN = 4.5 V ± 0.43 0.890 at VIN = 2.5 V ± 0.36 1.25 at VIN = 1.8 V ± 0.3 Si1040X 4 2, 3 S2 D2 Q2 • Halogen-free According to IEC 61249-2-21

TC4013BP equivalent

Abstract: D4066BC SCL4160BE SCL4081BE SCL4017BE CF4017BE scl4584be cd4013be equivalent CD4069BE CD4049CN
Contextual Info: Cross-Reference Guide T h is guide provides a quick reference to a wide variety of industry C M O S logic integrated circuits that can be replaced by R C A types. The R C A types listed as replacements are electrically and m echanically equivalent to the corre sp on d ing industry types and can be used as direct replacements in m ost

Contextual Info: Si1026X Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS(min) (V) RDS(on) () VGS(th) (V) ID (mA) 60 1.40 at VGS = 10 V 1 to 2.5 500 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 1.40  • Low Threshold: 2 V (typ.)

Contextual Info: Si1034CX Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V 0.05 Qg (Typ.) 0.75 • • • • TrenchFET Power MOSFET

Contextual Info: Si1023CX Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.756 at VGS = - 4.5 V - 0.35 1.038 at VGS = - 2.5 V - 0.35 1.44 at VGS = - 1.8 V - 0.1 2.4 at VGS = - 1.5 V - 0.05 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1069X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.184 at VGS = - 4.5 V - 0.94 0.268 at VGS = - 2.5 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si1037X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.195 at VGS = - 4.5 V - 0.84 0.260 at VGS = - 2.5 V - 0.73 0.350 at VGS = - 1.8 V - 0.64 SC-89 (6-LEADS) APPLICATIONS D 1 6 D D 2 5 D 3 4 • Cell Phones and Pagers

Contextual Info: Si1054X Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY a VDS (V) RDS(on) () ID (A) 0.095 at VGS = 4.5 V 1.32 12 0.104 at VGS = 2.5 V 1.26 0.114 at VGS = 1.8 V 0.88 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

MC140438

Abstract: MC140446 14043b C1404 MC14044B MC14043 MC14043B MC14XXXBCL MC14XXXBCP MC14XXXBD
Contextual Info: MC 14043 B M O T O R O L A MC14044B CMOS MSI L SUFFIX CERAMIC CASE 620 QUAD R-S LATCHES The C14043B and MC14G44B quad R-S latches are constructed with MOS P-channel and N-channei enhancement mode devices in a single monolithic structure. Each latch has an independent Q output

IMC14043B

Contextual Info: MOTOROLA SC - C L O G I O "ifl L 3 t,7 5 SH QOTTSMO 0 L; 6367252 MOTOROLA SC LOGIC 980 79540 O T - ¥ é - 0 ? - / S C14043B M O T O R O QUAD "NOR" R-S LATCH L A MC14044B QUAD "NAND" R-S LATCH CMOS MSI QUAD R-S LATCHES The C14043B and MC14044B quad R-S latches are constructed

MC140438

Abstract: 14044B
Contextual Info: C14043B MOTOROLA MC14044B CMOS MSI L SUFFIX CERAMIC CASE 620 QUAD R-S LATCHES Th e M C 1 4 0 4 3 B and M C 1 4 0 4 4 B quad R-S latches are constructed w ith M O S P-channel and N-channel enhancem ent mode devices in a single m onolithic structure. Each latch has an independent Q o utput

Contextual Info: Si1079X www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) (Ω) MAX. ID (A) 0.100 at VGS = -4.5 V -1.44 0.112 at VGS = -3.7 V -1.36 0.140 at VGS = -2.5 V -1.22 Qg (TYP.) • Typical ESD performance 2500 V

Contextual Info: Si1071X Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 0.167 at VGS = - 10 V 0.96 - 30 0.188 at VGS = - 4.5 V 0.90 0.244 at VGS = - 2.5 V 0.79 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET