C30895 Search Results

tic 1060

Abstract: rca 923 C30895 5252 F led rca 514 5252 F 5252 S RCA 411
Contextual Info: E G & G/CANADA/OPTOELEK BDBDbl D O O O O i n ID <123 H C A N A T-W-Si Photodiode R G i l Optics C30895 D A TA S H E ET Silicon Avalanche Photodiode Optim ized fo r High Responsivity and V e ry Lo w Noise at 1060 Nanom eters • Noise Equivalent Power NEP a t 1060 nm — 7.5 x 1 0 14 W/Hz1/2 max.

photodioda

Abstract: N10-13 laser rca rca 210 C30895
Contextual Info: 1GE D • I 74fi4b75 D D O D i n A INC/ ELECTRO OPTICS VICil H I Photodiode C30895 DATASHEET Silicon Avalanche Photodiode Optimized for High Responsivity and Very Low Noise at 1060 Nanometers ■ Noise Equivalent Pow er NEP a t 1060 n m — 7.5 x 1 0 14 W /Hz1'2 max.

Contextual Info: E G & G/CANADA/OPTOELEK ID î • 3ü30blü G O O O i n ItC ilElectro 123 M C A N A T-W S i Photodiode C30895 DATA SHEET Optics Silicon Avalanche Photodiode Optimized for High Responsivity and Very Low Noise at 1060 Nanometers ■ Noise Equivalent Power NEP at 1060 nm — 7.5 x 1 0 14 W/Hz1/2 max.