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Wolfspeed C4D10120D DIODE ARR SIC 1200V 9A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	C4D10120D	Tube	800		1	1 $9.35 10 $9.35 100 $5.50033 1000 $4.21251 10000 $4.21251	Buy Now
Mouser Electronics	C4D10120D		920			1 $8.99 10 $5.11 100 $5.11 1000 $4.21 10000 $4.21	Buy Now
Newark	C4D10120D	Bulk	5,106		1	1 $8.42 10 $7.22 100 $6.31 1000 $5.76 10000 $5.76	Buy Now
TME	C4D10120D		17		1	1 $7.3 10 $5.79 100 $5.4 1000 $5.4 10000 $5.4	Buy Now
Richardson RFPD	C4D10120D		765		1	1 $5.8 10 $5.8 100 $5.5 1000 $5.5 10000 $5.5	Buy Now

Chip1Stop	C4D10120D	Tube	320			1 $7.99 10 $4.39 100 $3.85 1000 $3.85 10000 $3.85	Buy Now
Analog Power ADC4D10120D DIODE SIL SIC 1200V 9A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ADC4D10120D	Tube			1	1 $12.54 10 $11.043 100 $12.54 1000 $7.9389 10000 $7.9389	Buy Now

C4D10120D Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
C4D10120D		Cree	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 1200V 9A TO247		Original	PDF

C4D10120D Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
c4d10120 Abstract: C4D10120D Text: C4D10120D–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = 1200 V IF = 10 A Qc =69 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching	Original	PDF	C4D10120D O-247-3 C4D10120D C4D10120 c4d10120
c4d10120 Abstract: No abstract text available Text: C4D10120D–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = 1200 V IF; TC<135˚C = 18 A Qc =69 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching	Original	PDF	C4D10120D O-247-3 C4D10120D C4D10120 c4d10120
C4D10120 Abstract: No abstract text available Text: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 13 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching	Original	PDF	C4D10120D O-247-3 O-247 C4D10120D C4D10120
C4D10120 Abstract: No abstract text available Text: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching	Original	PDF	C4D10120D O-247-3 O-247 C4D10120D C4D10120
Untitled Abstract: No abstract text available Text: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching	Original	PDF	C4D10120D O-247-3 O-24planted C4D10120A
C4D10120 Abstract: No abstract text available Text: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching	Original	PDF	C4D10120D O-247-3 O-24planted C4D10120A C4D10120
cmf20120 Abstract: CMF20120D mosfet 10a 800v 423F power Diode 800V 20A MOSFET 20a 800v Cree SiC MOSFET Text: CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V ID MAX = 42 A N-Channel Enhancement Mode RDS(on) Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive	Original	PDF	CMF20120D-Silicon O-247-3 CMF20120D CMF20120D cmf20120 mosfet 10a 800v 423F power Diode 800V 20A MOSFET 20a 800v Cree SiC MOSFET
CMF20120D Abstract: cmf20120 Text: CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS 1200 V ID MAX 42 A R 80mΩ DS(on) N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive	Original	PDF	CMF20120D-Silicon O-247-3 CMF20120D CMF20120D cmf20120
C2M1000170 Abstract: Diode 1S 2473 Text: VDS 1700 V ID @ 25˚C 4.9 A C2M1000170D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 1.0 Ω N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive	Original	PDF	C2M1000170D O-247-3 C2M1000170D C2M1000170 Diode 1S 2473
c2m0080120 Abstract: C2M0080120D 12v to 1000v inverters circuit diagrams 10v to 1000v inverters circuit diagrams Text: VDS 1200 V ID @ 25˚C 31.6 A C2M0080120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive	Original	PDF	C2M0080120D O-247-3 C2M0080120D c2m0080120 12v to 1000v inverters circuit diagrams 10v to 1000v inverters circuit diagrams
C4D05120 Abstract: CMF10120 CSD01060E c4d02120e c4d02120 C3D02060 C4D02120A C3D02060A C2D20120 c3d0606 Text: Power Product Line Z-RecTM Rectifiers DALL, Rev. G Datasheet: C3 VRRM V IF(AVG) (A) IF(AVG) (A) (Tc=150°C) (Tc=100°C) Zero-Recovery Rectifiers and VF(T VF(T TJ(Max) Max Typ Max (°C) Package Type Recommended for new designs? J=25°C) Typ J=175°C) CSD01060A	Original	PDF	CSD01060A CSD01060E C3D02060A C3D02060E C3D02060F C3D03060A C3D03060E C3D03060F C3D04060A C3D04060E C4D05120 CMF10120 c4d02120e c4d02120 C3D02060 C4D02120A C2D20120 c3d0606
C2M0160120D Abstract: No abstract text available Text: VDS 1200 V ID MAX @ 25˚C C2M0160120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS(on) 17.7 A 160 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive	Original	PDF	C2M0160120D O-247-3 C2M0160applications C2M0160120D
Untitled Abstract: No abstract text available Text: VDS 1200 V ID @ 25˚C 31.6 A C2M0080120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive	Original	PDF	C2M0080120D O-247-3 C2M0080120D