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Wolfspeed C4D10120D DIODE ARR SIC 1200V 19A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	C4D10120D	Tube			1	1 $9.35 10 $9.35 100 $5.50033 1000 $4.21251 10000 $4.21251	Buy Now
Mouser Electronics	C4D10120D		313			1 $8.66 10 $7.99 100 $5.24 1000 $4.21 10000 $4.21	Buy Now
Verical ()	C4D10120D		420		2	1 - 10 $7.435 100 $4.547 1000 $4.137 10000 $4.137	Buy Now
	C4D10120D		320		8	1 - 10 $7.67 100 $4.72 1000 $4.37 10000 $4.37	Buy Now
Arrow Electronics	C4D10120D		420	13 Weeks	1	1 $7.981 10 $7.435 100 $4.547 1000 $4.137 10000 $4.137	Buy Now
Newark	C4D10120D	Bulk			1	1 $8.39 10 $7.33 100 $4.85 1000 $4.56 10000 $4.56	Buy Now

TME	C4D10120D		17		1	1 $7.3 10 $5.79 100 $5.4 1000 $5.4 10000 $5.4	Buy Now
Richardson RFPD	C4D10120D		765		1	1 $5.8 10 $5.8 100 $5.5 1000 $5.5 10000 $5.5	Buy Now
Chip One Stop	C4D10120D	Tube	320	0 Weeks, 1 Days	1	1 $8.31 10 $7.67 100 $4.72 1000 $4.26 10000 $3.75	Buy Now
Vyrian	C4D10120D		1,595			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Analog Power ADC4D10120D DIODE SIL CARB 1200V 9A TO2473
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ADC4D10120D	Tube			1	1 $12.54 10 $11.043 100 $9.5506 1000 $7.9389 10000 $7.9389	Buy Now

C4D10120D Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
C4D10120D		Cree	Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 1200V 9A TO247		Original	PDF		6

C4D10120D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
c4d10120 Abstract: C4D10120D Contextual Info: C4D10120D–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = 1200 V IF = 10 A Qc =69 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching	Original	C4D10120D O-247-3 C4D10120D C4D10120 c4d10120	PDF
c4d10120 Contextual Info: C4D10120D–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = 1200 V IF; TC<135˚C = 18 A Qc =69 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching	Original	C4D10120D O-247-3 C4D10120D C4D10120 c4d10120	PDF
C4D10120 Contextual Info: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 13 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching	Original	C4D10120D O-247-3 O-247 C4D10120D C4D10120	PDF
C4D10120 Contextual Info: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching	Original	C4D10120D O-247-3 O-247 C4D10120D C4D10120	PDF
Contextual Info: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching	Original	C4D10120D O-247-3 O-24planted C4D10120A	PDF
C4D10120 Contextual Info: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching	Original	C4D10120D O-247-3 O-24planted C4D10120A C4D10120	PDF
cmf20120 Abstract: CMF20120D mosfet 10a 800v 423F power Diode 800V 20A MOSFET 20a 800v Cree SiC MOSFET Contextual Info: CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V ID MAX = 42 A N-Channel Enhancement Mode RDS(on) Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive	Original	CMF20120D-Silicon O-247-3 CMF20120D CMF20120D cmf20120 mosfet 10a 800v 423F power Diode 800V 20A MOSFET 20a 800v Cree SiC MOSFET	PDF
CMF20120D Abstract: cmf20120 Contextual Info: CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS 1200 V ID MAX 42 A R 80mΩ DS(on) N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive	Original	CMF20120D-Silicon O-247-3 CMF20120D CMF20120D cmf20120	PDF
C2M1000170 Abstract: Diode 1S 2473 Contextual Info: VDS 1700 V ID @ 25˚C 4.9 A C2M1000170D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 1.0 Ω N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive	Original	C2M1000170D O-247-3 C2M1000170D C2M1000170 Diode 1S 2473	PDF
c2m0080120 Abstract: C2M0080120D 12v to 1000v inverters circuit diagrams 10v to 1000v inverters circuit diagrams Contextual Info: VDS 1200 V ID @ 25˚C 31.6 A C2M0080120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive	Original	C2M0080120D O-247-3 C2M0080120D c2m0080120 12v to 1000v inverters circuit diagrams 10v to 1000v inverters circuit diagrams	PDF
C4D05120 Abstract: CMF10120 CSD01060E c4d02120e c4d02120 C3D02060 C4D02120A C3D02060A C2D20120 c3d0606 Contextual Info: Power Product Line Z-RecTM Rectifiers DALL, Rev. G Datasheet: C3 VRRM V IF(AVG) (A) IF(AVG) (A) (Tc=150°C) (Tc=100°C) Zero-Recovery Rectifiers and VF(T VF(T TJ(Max) Max Typ Max (°C) Package Type Recommended for new designs? J=25°C) Typ J=175°C) CSD01060A	Original	CSD01060A CSD01060E C3D02060A C3D02060E C3D02060F C3D03060A C3D03060E C3D03060F C3D04060A C3D04060E C4D05120 CMF10120 c4d02120e c4d02120 C3D02060 C4D02120A C2D20120 c3d0606	PDF
C2M0160120D Contextual Info: VDS 1200 V ID MAX @ 25˚C C2M0160120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS(on) 17.7 A 160 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive	Original	C2M0160120D O-247-3 C2M0160applications C2M0160120D	PDF
Contextual Info: VDS 1200 V ID @ 25˚C 31.6 A C2M0080120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive	Original	C2M0080120D O-247-3 C2M0080120D	PDF