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    CGH35060F Price and Stock

    MACOM CGH35060F2

    RF MOSFET HEMT 28V 440193
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH35060F2 Tray 21 1
    • 1 $288.44
    • 10 $255.1
    • 100 $255.1
    • 1000 $255.1
    • 10000 $255.1
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    CGH35060F Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGH35060F2 Wolfspeed 60W GAN HEMT 28V 4.0GHZ FLANGE Original PDF
    CGH35060F2 Wolfspeed 60W GAN HEMT 28V 4.0GHZ FLANGE Original PDF

    CGH35060F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Tantalum

    Abstract: CGH35060F-TB j121 10UF 470PF CGH3506 CGH35060 CGH35060F CGH35060-TB s-parameter
    Text: CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and


    Original     		PDF CGH35060F CGH35060F CGH3506 Tantalum CGH35060F-TB j121 10UF 470PF CGH3506 CGH35060 CGH35060-TB s-parameter

    CGH35060

    Abstract: CGH35060F
    Text: CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and


    Original     		PDF CGH35060F CGH35060F CGH3506 10failure CGH35060

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and


    Original     		PDF CGH35060F CGH35060F CGH3506

    Untitled

    Abstract: No abstract text available
    Text: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original     		PDF CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2

    Untitled

    Abstract: No abstract text available
    Text: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original     		PDF CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2

    CGH35060

    Abstract: CGH35060F 470PF CGH3506 CGH35060F-TB CGH35060-TB JESD22
    Text: CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and


    Original     		PDF CGH35060F CGH35060F CGH3506 CGH35060 470PF CGH3506 CGH35060F-TB CGH35060-TB JESD22

    Untitled

    Abstract: No abstract text available
    Text: CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal


    Original     		PDF CGH35060F1 CGH35060P1 CGH35060F CGH3506 CGH35 060P1 CGH35060P1

    CGH35060

    Abstract: No abstract text available
    Text: CGH35060F2 / CGH35060P2 60 W, 3100-3500 MHz, 28V, GaN HEMT Cree’s CGH35060F2/P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F2 / P2 ideal for


    Original     		PDF CGH35060F2 CGH35060P2 CGH35060F2/P2 CGH3506 CGH35 060P2 CGH35060

    Untitled

    Abstract: No abstract text available
    Text: CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal


    Original     		PDF CGH35060F1 CGH35060P1 CGH35060F CGH3506 CGH35 060P1 CGH35060P1

    16312 transistor

    Abstract: CGH35060F1-TB
    Text: CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal


    Original     		PDF CGH35060F1 CGH35060P1 CGH35060F CGH3506 CGH35 060P1 CGH35060P1 16312 transistor CGH35060F1-TB

    CGH09120F

    Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F
    Text: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR


    Original     		PDF CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F