CIL1020 Search Results

CIL1020

Abstract: CIL2655
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP/NPN COMPLEMENTARY PLANAR SILICON TRANSISTORS CIL1020 PNP CIL2655 (NPN) TO-237 BCE ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL

CIL1020Y

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP COMPLEMENTARY PLANAR SILICON TRANSISTORS CIL1020Y BPL TO-237 BCE ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE VCBO

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP/NPN COMPLEMENTARY PLANAR SILICON TRANSISTORS CIL1020 PNP CIL2655 (NPN) TO-237 BCE ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP COMPLEMENTARY PLANAR SILICON TRANSISTORS CIL1020B BPL TO-237 BCE ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION

CIL1020Y

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP COMPLEMENTARY PLANAR SILICON TRANSISTORS CIL1020Y BPL TO-237 BCE ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

CIL1020

Abstract: CIL2655
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP/NPN COMPLEMENTARY PLANAR SILICON TRANSISTORS CIL1020 PNP CIL2655 (NPN) TO-237 BCE ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE

T1P42C

Contextual Info: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN

G25CW

Abstract: CIL10
Contextual Info: cm tq^ pljwsic cr*oc Maxinlum Rfitings Type No. Electrical Characteristics Ta=25”C, Unless Otherwise Specified wCE(SAT) vv BE|S«T) a 'c c* 'c (V) S (V) 0 (mA) (pF) (MHz) (mA) Max Min Max Typ Max Min Typ Max KoH) (ns) Max COIl Case Style 'c ^ceo V EBO

DIAC DB2

Abstract: BD469 C2N3904 pin configuration transistor BC547 smd packaging C2N5551 cbc337 D1 DB2 Diac SMD SOT23 transistor MARK Y2 A1941 1N4007 MINI MELF
Contextual Info: Quick Reference Data Wafer Fabrication Surface Mounted Devices Leaded Semiconductor Devices Electronic Manufacturing Services Switching Diodes & Arrays Schottky Barrier Diodes Zener Diodes Rectifiers Small Signal Transistors Medium Power Transistors Power Transistors

2N6706

Abstract: 2n6730 tn2905 CSC1573 MPSW13 2N6705 2N6707 2N6711 cil916 2N6713
Contextual Info: TO-237 DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 1,14 12,70 5.DEG MAX 5,33 5,20 4,19 0,55 0,50 0,55 1,40 2,54 - A L L DIM EN SIO N S A R E IN M.M. L L PIN CONFIGURATION AVAILABLE IN TO-237 CDIL Code Style 3 TO-237 PIN 1 PIN 2 PIN 3 Emitter Base

transistor 237

Abstract: 2N6708 2N6709 2N6710 2N6726 2N6727 2N6728 2N6729 2N6730 2N6732
Contextual Info: TO-237 Plastic Package Transistors PNP Maximum Ratings Type No. 2N6708 2N6709 2N6710 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Y cbo V CEO ^EBO (V) Min (V) Min (V) Min (W) @Tc=25”c (A) 60 45 5 0.75 1.5 80 100 60 80 5 5 0.75 0.75

Contextual Info: TO-237 Piastio Package Transistors PNP Maximum Ratings Type No. 2N6708 2N6709 2N6710 Electrical Characteristics (Ta=25”C, U n le ss Otherwise Specified) ^CfiO ^CEO V EB0 (V) Min (V) Min (V) Min PD (W) @Tc=25°c 'c (A) 60 45 5 0.75 1.5 80 100 60 80 5 5