CMBT3906 Search Results

X10-4

Contextual Info: CMBT3904E NPN CMBT3906E PNP ENHANCED SPECIFICATION COMPLEMENTARY FEMTOminiTM SILICON TRANSISTORS SOT-923 CASE FEATURES • Very Small Package Size • 200mA Collector Current • Low VCE SAT (0.1V Typ @ 50mA) • Miniature 0.8 x 0.6 x 0.4mm Ultra Low height profile

SMD TRANSISTOR MARKING 2A pnp

Abstract: CMBT3906
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transisto r Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

CMNT3906E

Contextual Info: ¡ei S e m ic o n d u c to r C o rp . S i V C E S A T H f t W 60V, 200mA TLP Tiny Laadlass Package fEMTOminr CET3904E (NPN) CET3906E (PNP) CMBT3904E (NPN) CMBT3906E (PNP) SOT-883L SOT-923 TEÌSL0B 1.05mm x 0.65mm x 0.4mm ( g / t ) 1.1 mm x 0.65mm x 0.41 mm

m 923

Abstract: laptop ic list CMNT3906E SOT923 sot-883 3904 SOT CET3904 3904 sot-923 marking 02 npn
Contextual Info: PRODUCT announcement Tiny Low VCE SAT Transistors 60V, 200mA CET3904E (NPN) CET3906E (PNP) CMBT3904E (NPN) CMBT3906E (PNP) Top View Sample Devices soT-923 soT-883l available Bottom View 1.05mm x 0.65mm x 0.4mm(H) 1.1mm x 0.65mm x 0.41mm(H) upon request. features

Contextual Info: CMBT3906 SILICON EPITAXIAL TRANSISTOR P-N -P transistor Marking CMBT3906 = 2A PA CKA G E O U TLIN E DETAILS A LL D IM EN SIO N S IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02 0.89" 2.00 0.60 0.40 1.80

SOT-883L

Abstract: sot883lip
Contextual Info: Sei a nnductor Cl c< 60V, 200mA T# g L I ffMTOmini Package CET3904E NPN CET3906E (PNP) CMBT3904E (NPN) CMBT3906E (PNP) SOT-883L 1.05mm x SOT-923 0.65mm x 0.4mm (Mix.) 1.1 mm x 0.65mm x 0.41 mm • « t ä f e l t e « , f i i g s 10mA T Ä * VCE(SAT)

PB CMBT3904E_06E

Abstract: CMBT3904E SOT923 SOT-923
Contextual Info: Product Brief CMBT3904E NPN CMBT3906E (PNP) Marking Code CMBT3904E: B CMBT3906E: G SOT-923 40V, 200mA NPN and PNP General Purpose Low VCE(SAT) Small Signal Transistors CMBT3904E CMBT3906E in the SOT-923 The CMBT3904E and the CMBT3906E are 40V, 200mA NPN and PNP transistors with an exceptionally low VCE(SAT) specification

3906 PNP

Abstract: m 923 on semiconductor marking code sot transistor 3904 npn datasheet 3904 NPN r 923 SOT-883L SOT-923 CMNT3906E 3904 SOT
Contextual Info: PRODUCT announcement Tiny Low VCE SAT Transistors 60V, 200mA CET3904E (NPN) CET3906E (PNP) CMBT3904E (NPN) CMBT3906E (PNP) Top View Sample Devices SOT-923 SOT-883L available Bottom View 1.05mm x 0.65mm x 0.4mm(H) 1.1mm x 0.65mm x 0.41mm(H) upon request. features

X10-4

Abstract: SOT-923
Contextual Info: CMBT3904E NPN CMBT3906E PNP ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS SOT-923 CASE FEATURES • Very Small Package Size • 200mA Collector Current • Low VCE SAT (0.1V Typ @ 50mA) • Miniature 0.8 x 0.6 x 0.4mm Ultra Low height profile

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A

563 j 400v

Abstract: 8002A scr SOT-23 JE SOT23 npn 400V sot-23 CMKTC825A CMXDM7002A TLM532 KS sot 23 pnp 400v 10a
Contextual Info: le n H Sem iconductor Corp. }TM Central www.centralsemi.com/product/whatsnew VCE SAT f i t t g 60V, 200mA CET3904E (NPN) CMBT3904E (NPN) CET3906E (PNP) CMBT3906E (PNP) SOT-883L s* • * » * « 1 1 4 * 1 . S tS S 10mA T i * VCE(SAT) « i x * 0.1V. • SOT-883L in SOT-923 S S IS tfS iiJ, ffigij .

Contextual Info: CMBT3906 SILICON EPITAXIAL TRANSISTOR P -N -P transistor M arking CMBT3906 = 2A PACKAGE OUTLIN E DETAILS A LL DIM EN SION S IN mm 3.0 0.14 0.70 0.50 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter

Contextual Info: CMBT3906 SILICON EPITAXIAL TRANSISTOR P -N -P transistor M arking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIM EN SION S IN mm CU4 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 110 hFE ÍT max. max. max. max. max. k-i o ~VcB0 ~VcE0 -V eb O -Ic ptot

CMBT3906

Contextual Info: CMBT3906 SILICON EPITAXIAL TRANSISTOR P -N -P transistor M arking CMBT3906 : 2A P A C K A G E O U TLIN E D ETA ILS ALL D IM EN SIO N S IN m m _3.0_ 2.8 0.14 0.09 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _L02_ 0.60 0.40 0.89

CMBT3906

Contextual Info: CMBT3906 SILICON EPITAXIAL TRANSISTOR P -N -P transistor Marking CMBT3906 ; 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1,02_ 0.89 2.00 1.80 0.60 0.40 ABSOLUTE MAXIMUM RATINGS

SMD TRANSISTOR MARKING 2A pnp

Abstract: MARKING SMD TRANSISTOR P CMBT3906 MARKING SMD PNP TRANSISTOR 2a
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE

diac D30

Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
Contextual Info: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED

Contextual Info: 微型低 VCE SAT 晶体管 机械规格 尺寸 英寸 毫米 符号 引线代码： 1) 基极 2) 发射极 3) 集电极 标识代码： CET3904E： C CET3906E： D 顶视图 侧视图 安装垫几何构型 (尺寸单位 mm) 底视图 安装垫几何构型

SOT-923

Abstract: SOT923 CET3906E SOT-883L SOT883L 3904 sot-923
Contextual Info: 发布 微型低 VCE SAT 晶体管 顶视图 如有需要 可提供样品 底视图 1.05mm x 0.65mm x 0.4mm (高度) 1.1mm x 0.65mm x 0.41mm (高度) 特点 增强电气性能，包括在 10mA 下最大 VCE(SAT) 值仅为 0.1V SOT-883L 和 SOT-923 封装

DIAC DB2

Abstract: BD469 C2N3904 pin configuration transistor BC547 smd packaging C2N5551 cbc337 D1 DB2 Diac SMD SOT23 transistor MARK Y2 A1941 1N4007 MINI MELF
Contextual Info: Quick Reference Data Wafer Fabrication Surface Mounted Devices Leaded Semiconductor Devices Electronic Manufacturing Services Switching Diodes & Arrays Schottky Barrier Diodes Zener Diodes Rectifiers Small Signal Transistors Medium Power Transistors Power Transistors

12v dc full wave bridge rectifier

Abstract: Schottky Diode 40V 5A bridge SCR 12V battery charging Schottky Diode 40V 5A dual Schottky Diode 40V 5A Schottky Bridge 20V 2A bridge rectifier 100A 100V Dual N-Channel MOSFET dip package DIODE RECTIFIER BRIDGE SINGLE 200A P-Channel mosfet 400v
Contextual Info: Dual, Schottky Diodes CMRD6263DO 70V, 15mA Dual, Schottky Diodes Features: Benefits: Applications: SOT-963 Actual Size in mm 1.05 x 1.05 x 0.5 • Dual, isolated, 70V, 15mA Schottky diodes • Low reverse current 98nA @ 50V • High total energy efficiency

SOD-923 zener

Abstract: 8002A Package Details SOT-28 NPN PNP sot-563 scr SOT-23 VF 0.1v CMXDM7002A Schottky Diode SOT-89 laptop battery pinout CMKTC825A
Contextual Info: ’ new what’s what’s new keep up to date with the latest devices from CentralTM.visit our website at: www.centralsemi.com/product/whatsnew Tiny Low VCE SAT Transistors 60V, 200mA cEt3904E (NPN) cEt3906E (PNP) features SOt-923 SOt-883L Top View • Enhanced Specification including an improved maximum VCE(SAT) of 0.1V @ 10mA

SOT923

Contextual Info: News Release Released – August 11, 2009 145 Adams Avenue Hauppauge, NY 11788 USA Tel: 631 435-1110 Fax: (631) 435-1824 Contact: Tom Donofrio Email: tdonofrio@centralsemi.com www.centralsemi.com For Immediate Release Central Semiconductor’s Low VCE(SAT) Transistors