CP394R
Abstract: CEDM7004
Contextual Info: PROCESS CP394R Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip PROCESS DETAILS Die Size 15.7 x 15.7 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 3.9 x 3.9 MILS Source Bonding Pad Area 9.1 x 8.1 MILS Top Side Metalization Al-Si - 35,000Å
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Original
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CP394R
CEDM7004
22-March
CP394R
CEDM7004
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PDF
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CP394R
Abstract: CEDM7004
Contextual Info: PROCESS CP394R Small Signal MOSFET Transistor N-Channel Enhancement-Mode Transistor Chip PROCESS DETAILS Die Size 15.7 x 15.7 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 3.9 x 3.9 MILS Source Bonding Pad Area 9.1 x 8.1 MILS Top Side Metalization Al-Si - 35,000Å
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Original
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CP394R
CEDM7004
25-November
2009S
CP394R
CEDM7004
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PDF
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