CP759R Search Results
CP759R Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
Small Signal MOSFETContextual Info: PROCESS CP759R Small Signal MOSFET P-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 9.1 x 9.1 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 2.5 MILS DIAMETER Source Bonding Pad Area 3.9 x 3.9 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization |
Original |
CP759R CMRDM7590 13-May Small Signal MOSFET |