CQ223 Search Results

Contextual Info: CQ223-4M CQ223-4N w w w. c e n t r a l s e m i . c o m SURFACE MOUNT 4 AMP SILICON TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223-4M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in

Contextual Info: CQ223-2M CQ223-2N w w w. c e n t r a l s e m i . c o m SURFACE MOUNT 2 AMP SILICON TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223-2M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering

CQ202-4BS

Abstract: 2N6073 CQ220-16 CQ89D CQ89M CQ89N CQ92B CQ92BT CQD-4N CQ92DT
Contextual Info: Triacs Metal/Plastic IT AMPS 1.0 2.0 @ TC (oC) 50 50 80 80 50 ITSM (AMPS) 20 20 10 10 20 TO-92 CASE RY INA LIM E PR SOT-89 RY INA LIM E PR SOT-223 SOT-89 VDRM,VRRM (VOLTS) 200 CQ92B* CQ92BT* 400 CQ92D* CQ92DT* CQ89D* 600 CQ92M* CQ92MT* CQ89M* CQ223M* CQ89-2M

marking 4n

Abstract: CQ223-4M CQ223-4N TRIAC 60A WA200
Contextual Info: CQ223-4M CQ223-4N SURFACE MOUNT 4 AMP SILICON TRIAC 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223-4M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in

CQ220-8B

Abstract: Triacs equivalent CQ202-4M CQ92NT CQ89D CQ89M CQ89N CQ92B CQ92BT CQ92D
Contextual Info: Triacs Metal/Plastic IT AMPS 1.0 2.0 @ TC (oC) 50 50 80 80 80 ITSM (AMPS) 20 20 10 10 10 E PR TO-92 CASE LIM INA RY SOT-89 PR EL IMI NA RY SOT-223 SOT-89 VRRM (VOLTS) 200 CQ92B CQ92BT 400 CQ92D CQ92DT CQ89D* 600 CQ92M CQ92MT CQ89M* CQ223M* CQ89-2M 800 CQ92N*

Contextual Info: Central" CQ223-4M CQ223-4N Semiconductor Corp. 4.0 AMP TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223-4M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four 4 quadrants.

marking code 4n

Abstract: 6 amp 600 volt triac marking 4n CQ223-4M CQ223-4N triac 40 amp
Contextual Info: Central CQ223-4M CQ223-4N TM Semiconductor Corp. 4.0 AMP TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223-4M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four 4 quadrants.

CQ223-2M

Abstract: CQ223-2N
Contextual Info: Central CQ223-2M CQ223-2N TM Semiconductor Corp. 2.0 AMP TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223-2M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four 4 quadrants.

20 amp 800 volt triac

Abstract: 40 amp 800 volt triac CQ223-2M CQ223-2N CQ223-4M CQ223-4N CQ223M CQ223N TR13
Contextual Info: PRODUCT announcement 1 Amp, 2 Amp and 4 Amp TRIACs in a SOT-223 CQ223 Series features • 600 and 800 Volts • Low 1.8mm profile 23% lower than DPAK • Utilizes 28% less board space than an industry standard DPAK description Sample Devices available upon request.

SEM 2004

Contextual Info: Central“ CQ223-2M CQ223-2N Sem iconductor Corp. 2.0 AMP TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223-2M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four 4 quadrants.

Contextual Info: Central CQ223M CQ223N Semiconductor Corp. 1.0 AMP TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223M series types are epoxy molded silicon triacs designed for full wave AC control applications featuring gate triggering in all four 4 quadrants.

10 amp triac

Abstract: CQ223M marking code TC TC-25 amp 600 volt triac CQ223N
Contextual Info: RY A IN IM L RE Central CQ223M CQ223N P TM Semiconductor Corp. 1.0 AMP TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223M series types are epoxy molded silicon triacs designed for full wave AC control applications featuring gate triggering in all four 4 quadrants.

triac 30a

Abstract: 2n triac CQ223-2M CQ223-2N Itm-20A triac 800 v 20a
Contextual Info: CQ223-2M CQ223-2N SURFACE MOUNT 2 AMP SILICON TRIAC 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223-2M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering

CQ223-4M

Abstract: CQ223-4N marking code 4M
Contextual Info: Central CQ223-4M CQ223-4N TM Semiconductor Corp. 4.0 AMP TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223-4M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four 4 quadrants.

Contextual Info: [CQ-2233] CQ-2233 High-Speed Small Current Sensor 1. 概 要 CQ-2233は電流値に比例したアナログ電圧を出力する、磁気式のオープン型電流センサです。高感度 の量子井戸構造InAsホール素子を採用しており、直流、交流のいずれも高精度で高速に検出できること

Contextual Info: Thyristor Selection Guide SELECT GUIDE 15 Metal/Plastic lT AMPS 0.2 @ TC (°C) 25 60 60 60 60 25 25 lTSM (AMPS) 7.5 10 10 10 10 10 10 0.8 * % CASE TO-92 SOT-23 SOT-89 TO-92 SOT-223 VDRM,VRRM (VOLTS) 30 2N5060 BRX44I 60 2N5061 BRX45t 2N5062 BRX46t 100 CMPS5061

Triac

Abstract: triac datasheet 6 amp 600 volt triac triac 4 amp 600 volt CQ223-2M CPQ057 CQ89-2M CQ92-2M R029
Contextual Info: PROCESS CPQ057 TRIAC 2.0 Amp, 600 Volt TRIAC Chip PROCESS DETAILS Process Glass Passivated Mesa Die Size 57 x 57 MILS Die Thickness 8.6 MILS ± 0.6 MILS MT1 Bonding Pad Area 28 x 16 MILS Gate Bonding Pad Area 10 x 9 MILS Top Side Metalization Al - 45,000Å

Contextual Info: [CQ-2234] CQ-2234 High-Speed Small Current Sensor 1. 概 要 CQ-2234は電流値に比例したアナログ電圧を出力する、磁気式のオープン型電流センサです。高感度 の量子井戸構造InAsホール素子を採用しており、直流、交流のいずれも高精度で高速に検出できること

BT131 equivalent

Abstract: BRX49 equivalent S6015L equivalent BTA16-600B equivalent BT134 equivalent BTA12-600B equivalent X0405MF equivalent equivalent mcr22 2N5064 equivalent BT131 600 equivalent
Contextual Info: index/cross Reference Industry Part Number Central Part Number Code 2N5060 2N5061 2N5062 2N5063 2N5064 2N6071 2N6071A 2N6071B 2N6072 2N6072A 2N6072B 2N6073 2N6073A 2N6073B 2N6074 2N6074A 2N6074B 2N6075 2N6075A 2N6075B 2N6342 2N6342A 2N6343 2N6343A 2N6344 2N6344A

Contextual Info: PROCESS TRIAC CPQ057 2 Amp, 600 Volt TRIAC Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 57 x 57 MILS Die Thickness 9.1 MILS MT1 Bonding Pad Area 29 x 17 MILS Gate Bonding Pad Area 8 x 8 MILS Top Side Metalization Al - 45,000Å Back Side Metalization

EIAJ ED-4701/101

Contextual Info: [CQ-2234] CQ-2234 High-Speed Small Current Sensor 1. Genaral Description CQ-2234 is an open-type current sensor using a Hall sensor which outputs the analog voltage proportional to the AC/DC current. Quantum well ultra-thin film InAs Indium Arsenide is used as the Hall sensor,

Contextual Info: PROCESS CPQ090 TRIAC 4.0 Amp, 600 Volt TRIAC Chip PROCESS DETAILS Process Glass Passivated Mesa Die Size 90 x 90 MILS Die Thickness 8.6 MILS ± 0.6 MILS MT1 Bonding Pad Area 61 x 48 MILS Gate Bonding Pad Area 11 x 9.8 MILS Top Side Metalization Al - 45,000Å

Contextual Info: [CQ-2232] CQ-2232 High-Speed Small Current Sensor 1. Genaral Description CQ-2232 is an open-type current sensor using a Hall sensor which outputs the analog voltage proportional to the AC/DC current. Quantum well ultra-thin film InAs Indium Arsenide is used as the Hall sensor,

Contextual Info: [CQ-2233] CQ-2233 High-Speed Small Current Sensor 1. Genaral Description CQ-2233 is an open-type current sensor using a Hall sensor which outputs the analog voltage proportional to the AC/DC current. Quantum well ultra-thin film InAs Indium Arsenide is used as the Hall sensor,