CY10E470 Search Results

Contextual Info: _ _ CY10E470 CY100E470 s i CYPRESS ^S W SEMICONDUCTOR . 4K x l E C L Features Functional Description • 4096 x 1—bit organization • High speed/low power tAA —5 ns T h e Cypress CY 10E470 an d CY 100E470 are E C L R A M s designed fo r scratch pad,

Contextual Info: CY10E470 CY100E470 s s s s s js CYPRESS S S ' # ' SEMICONDUCTOR e 4096 x 1 ECL Static RAM Features Functional Description • 4096 x 1 - b it organization • High speed/low power — tAA = 5 ns — I e e = 200 mA • Both 10K- an d 100K-compatible ver­ sions

CY10E470

Abstract: CY10E470-7DC 013A4
Contextual Info: CY10E470 CY100E470 g CYPRESS SEMICONDUCTOR 4096 x 1 ECL Static RAM Features Functional Description • 40% x 1—bit organization • High speed/low power The Cypress CY10E470 and CY100E470 are ECL RAMs designed for scratch pad, control, and buffer storage applications.

Contextual Info: CY10E470 CY100E470 CYPRESS SEMICONDUCTOR 4096 x 1 ECL Static RAM Features Functional Description • 4096 x 1-b it organization T h e Cypress CY10E470 and CY100E470 are E C L R A M s designed for scratch pad, control, and buffer storage applications. B oth p arts are fully decoded random ac­

Contextual Info: CY10E470 _ CY100E470 SEMICONDUCTOR 4K x 1 ECL Static RAM Features Functional Description • 4096 x 1—bit organization T h e C ypress CY 10E470 and CY 100E470 are E C L R A M s designed for scratch pad, control, an d b u ffer storage applications.