CY62138V Search Results

CY62138V

Abstract: CY62138VL-70ZI CY62138VLL-70ZI
Contextual Info: CYPRESS PRELIMINARY CY62138V MoBL 256K x 8 Static RAM Features W riting to the device is acco m p lished by ta kin g chip enable one CS-| and w rite enable (W E) inputs LO W and chip enable tw o (C S 2) input HIG H. Data on th e eight I/O pins (I/Oq through

CY62138F

Abstract: CY62138FLL-45SXI CY62138FLL-45ZSXI CY62138V
Contextual Info: CY62138F MoBL 2-Mbit 256K x 8 Static RAM Functional Description [1] Features • • • • High speed: 45 ns Wide voltage range: 4.5 V – 5.5 V Pin compatible with CY62138V Ultra low standby power — Typical standby current: 1 µA — Maximum standby current: 5 µA

Contextual Info: CY62138F MoBL 2-Mbit 256K x 8 Static RAM Functional Description[1] Features • • • • High speed: 45 ns Wide voltage range: 4.5 V – 5.5 V Pin compatible with CY62138V Ultra low standby power The CY62138F is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features

Contextual Info: CY62138VN MoBL 256K x 8 Static RAM Features Functional Description • Temperature Ranges — Industrial: –40°C to 85°C • Low voltage range: — 2.7–3.6V • Ultra-low active power • Low standby power • Easy memory expansion with CS1/CS2 and OE features

CY62138V

Abstract: CY62138VLL-70BAI
Contextual Info: CY62138V MoBL 2-Mbit 256K x 8 Static RAM This is ideal for providing More Battery Life™ (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power-down feature that reduces power consumption by 99% when addresses are not toggling. The

CY62138V

Abstract: CY62138VL-70ZI
Contextual Info: PRELIMINARY CY62138V MoBL 256K x 8 Static RAM Features • Low voltage range: — 1.8−3.3V • Ultra-low active power • Low standby power • Easy memory expansion with CS1/CS2 and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected

62137A

Contextual Info: Cypress Semiconductor Qualification Report QTP# 99262/99261 VERSION 1.0 December, 1999 MoBL SRAM, R52LD Technology, Fab 4 Qualification CY62136V/CY62137V 128K x 16 Static RAM CY62138V 256K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell

Contextual Info: CY62138V MoBL 256K x 8 Static RAM Features • Low voltage range: — 1 .8 -3 .3V • Ultra-low active power • Low standby power • Easy memory expansion with C S i/C S 2 and OE features • TTL-com patible inputs and outputs • Automatic power-down when deselected

38-00729-A

Abstract: 10J1 CY62138V CY62138VL-70BAI fbga Substrate design guidelines
Contextual Info: CY62138V MoBL T M F/ CYPRESS 256K x 8 Static RAM sumption by 99% when addresses are not toggling. The device can be put into standby mode when deselected CS-| HIGH or CS2 LOW . Features • Low voltage range: -2 .7 -3 .6 V • • • • • • Ultra-low active power

CY62137V

Abstract: CY62138V
Contextual Info: Cypress Semiconductor Qualification Report QTP# 99075 VERSION 1.0 April, 1999 MoBL SRAM, R52LD Technology, Fab 4 Qualification CY62136V/CY62137V 128K x 16 Static RAM CY62138V 256K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Cypress Semiconductor

CY62138V

Abstract: CY62138VLL-70BAI CY62138VLL
Contextual Info: CY62138V MoBL 256K x 8 Static RAM Features • Low voltage range: — 2.7–3.6V • Ultra-low active power • Low standby power • Easy memory expansion with CS1/CS2 and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected

CY62138VN

Abstract: CY62138VNLL-70BAI
Contextual Info: CY62138VN MoBL 256K x 8 Static RAM Features Functional Description • Temperature Ranges — Industrial: –40°C to 85°C • Low voltage range: — 2.7–3.6V • Ultra-low active power • Low standby power • Easy memory expansion with CS1/CS2 and OE features

114936

Contextual Info: CY62138V MoBL 2-Mbit 256K x 8 Static RAM This is ideal for providing More Battery Life™ (MoBL ) in portable applications such as cellular telephones. The device also has an automatic power-down feature that reduces power consumption by 99% when addresses are not toggling. The

CY62138V

Abstract: CY62138VLL-70BAI
Contextual Info: CY62138V MoBL 256K x 8 Static RAM Features • Low voltage range: — 2.7–3.6V • Ultra-low active power • Low standby power • Easy memory expansion with CS1/CS2 and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected

CY62138F

Abstract: CY62138FLL-45SXI CY62138FLL-45ZSXI CY62138V
Contextual Info: CY62138F MoBL 2-Mbit 256K x 8 Static RAM Functional Description [1] Features • • • • High speed: 45 ns Wide voltage range: 4.5 V – 5.5 V Pin compatible with CY62138V Ultra low standby power — Typical standby current: 1 µA — Maximum standby current: 5 µA

CY62138V

Abstract: CY62138VLL-70BAI
Contextual Info: CY62138V MoBL 256K x 8 Static RAM Features • Low voltage range: — 2.7–3.6V • Ultra-low active power • Low standby power • Easy memory expansion with CS1/CS2 and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected

ecn1310

Contextual Info: CY62138F MoBL 2-Mbit 256K x 8 Static RAM Features • High speed: 45 ns ■ Wide voltage range: 4.5 V – 5.5 V ■ Pin compatible with CY62138V ■ Ultra low standby power Functional Description [1] The CY62138F is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features

CY62136V

Abstract: CY62138V
Contextual Info: PRESS RELEASE CYPRESS'S NEW MoBL SRAMS SET NEW BENCHMARK FOR LOW-POWER 0.25-Micron Devices Offer the Industry’s Lowest Power Consumption SAN JOSE, Calif., December 7, 1998 – Cypress Semiconductor Corp. [NYSE:CY] today introduced a new family of micropower SRAMs with the industry’s lowest power consumption.

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

Contextual Info: Press Release CYPRESS'S NEW MoBL SRAMS SET NEW BENCHMARK FOR LOW POWER 0.25-Micron Devices Offer the Industry’s Lowest Power Consumption SAN JOSE, Calif., December 7, 1998 – Cypress Semiconductor Corp. [NYSE:CY] today introduced a new family of micropower SRAMs with the industry’s lowest power consumption. Cypress’s MoBL™ More Battery Life™

Contextual Info: CY62138F MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • High speed: 45 ns The CY62138F is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

ecn1310

Contextual Info: CY62138F MoBL 2-Mbit 256 K x 8 Static RAM 2-Mbit (256 K × 8) Static RAM Features Functional Description • High speed: 45 ns The CY62138F is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This

CYPRESS SAMSUNG CROSS REFERENCE

Abstract: TC55V400-70 toshiba 32k*8 sram TC55257DI-L-70 tbb1458b BS62LV1024-70 BS62UV1024-15 BS62UV256-15 K6F8008S2M BS62LV4005-70
Contextual Info: 7700 Irvine Center Dr. STE: 420 Irvine, CA 92618 Contact: Lena Patel email: lena@brilliancesemi.com Phone Number: 949-789-6274 Fax Number: 949-789-6277 Website: www.brilliancesemi.com SRAM CROSS REFERENCE Memory Size Operating Voltage SAMSUNG 1.2 ~ 2.4V 1.8 ~ 3.6V