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    Rochester Electronics LLC CY7C1009B-15VC

    IC SRAM 1MBIT PARALLEL 32SOJ
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    Infineon Technologies AG CY7C1009B-15VC

    IC SRAM 1MBIT PARALLEL 32SOJ
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    DigiKey CY7C1009B-15VC Tube 2,300
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    Infineon Technologies AG CY7C1009B-12VC

    IC SRAM 1MBIT PARALLEL 32SOJ
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    DigiKey CY7C1009B-12VC Tube 2,300
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    Flip Electronics CY7C1009D-10VXI

    IC SRAM 1MBIT PARALLEL 32SOJ
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    Infineon Technologies AG CY7C1009D-10VXI

    IC SRAM 1MBIT PARALLEL 32SOJ
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    Arrow Electronics CY7C1009D-10VXI 220 98 Weeks 690
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    Rochester Electronics CY7C1009D-10VXI 66 1
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    CY7C1009 Datasheets (93)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY7C1009 Cypress Semiconductor 128K x 8 Static RAM Original PDF
    CY7C1009 Cypress Semiconductor 128K x 8 Static RAM Original PDF
    CY7C1009-10VC Cypress Semiconductor 128K x 8 Static RAM Original PDF
    CY7C1009-10VC Cypress Semiconductor 128K x 8 Static RAM, TTL-compatible, 10ns Original PDF
    CY7C1009-12PC Cypress Semiconductor 128K x 8 Static RAM Scan PDF
    CY7C1009-12VC Cypress Semiconductor 128K x 8 Static RAM Original PDF
    CY7C1009-12VC Cypress Semiconductor 128K x 8 Static RAM Original PDF
    CY7C1009-12VC Cypress Semiconductor 128K x 8 Static RAM, TTL-compatible, 12ns Original PDF
    CY7C1009-12VC Cypress Semiconductor 128K x 8 Static RAM Scan PDF
    CY7C1009-12VCT Cypress Semiconductor 128K x 8 Static RAM Original PDF
    CY7C1009-15DMB Cypress Semiconductor 128K x 8 Static RAM Original PDF
    CY7C1009-15DMB Cypress Semiconductor 128K x 8 Static RAM Scan PDF
    CY7C1009-15LMB Cypress Semiconductor 128K x 8 Static RAM Original PDF
    CY7C1009-15LMB Cypress Semiconductor 128K x 8 Static RAM Scan PDF
    CY7C1009-15PC Cypress Semiconductor 128K x 8 Static RAM Scan PDF
    CY7C1009-15VC Cypress Semiconductor 128K x 8 Static RAM Original PDF
    CY7C1009-15VC Cypress Semiconductor 128K x 8 Static RAM Original PDF
    CY7C1009-15VC Cypress Semiconductor 128K x 8 Static RAM, TTL-compatible, 15ns Original PDF
    CY7C1009-15VC Cypress Semiconductor 128K x 8 Static RAM Scan PDF
    CY7C1009-15VCT Cypress Semiconductor 128K x 8 Static RAM Original PDF

    CY7C1009 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cy7c109l-15vi

    Abstract: CY7C109L15VI CY7C109L CY7C1009 CY7C109 CY7C1009-15VI cy7c109-15zc CY7C109-15VI
    Text: CY7C109 CY7C1009 128K x 8 Static RAM Features • High speed — tAA = 10 ns • Low active power — 1017 mW max., 12 ns • Low CMOS standby power — 55 mW (max.), 4 mW (Low-power version) • 2.0V Data Retention (Low-power version) • Automatic power-down when deselected


    Original     		PDF CY7C109 CY7C1009 CY7C109 CY7C1009 cy7c109l-15vi CY7C109L15VI CY7C109L CY7C1009-15VI cy7c109-15zc CY7C109-15VI

    Untitled

    Abstract: No abstract text available
    Text: THIS SPEC IS OBSOLETE Spec No: 38-05038 Spec Title: CY7C109B, CY7C1009B 128K X 8 STATIC RAM Sunset Owner: Prashanth Jnanendra PRAS Replaced by: NONE CY7C109B CY7C1009B 128K x 8 Static RAM Functional Description[1] Features • High speed The CY7C109B/CY7C1009B is a high-performance CMOS


    Original     		PDF CY7C109B, CY7C1009B CY7C109B CY7C1009B 400-mil-wide 32-pin 300-mil-wide CY7C109B/CY7C1009B

    Untitled

    Abstract: No abstract text available
    Text: CY7C109D CY7C1009D 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features • Pin- and function-compatible with CY7C109B/CY7C1009B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 80 mA at 10 ns ■ Low CMOS standby power ❐ ISB2 = 3 mA


    Original     		PDF CY7C109D CY7C1009D CY7C109B/CY7C1009B CY7C109D 32-pin 400-Mil CY7C1009D 300-Mil

    CY7C1009

    Abstract: No abstract text available
    Text: 1CY 7C10 09 PRELIMINARY CY7C1009 128K x 8 Static RAM Features • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW • 2.0V data retention optional — 100 µW • Available in 450 x 550-mil LCC


    Original     		PDF CY7C1009 550-mil CY7C1009

    CY7C1009

    Abstract: CY7C109
    Text: fax id: 1047 CY7C109 CY7C1009 128K x 8 Static RAM Features • High speed — tAA = 10 ns • Low active power — 1017 mW max., 12 ns • Low CMOS standby power — 55 mW (max.), 4 mW (Low power version) • 2.0V Data Retention (Low power version) • Automatic power-down when deselected


    Original     		PDF CY7C109 CY7C1009 CY7C1009 CY7C109

    7C109A

    Abstract: CY7C109
    Text: Cypress Semiconductor Qualification Report QTP# 98064 VERSION 1.0 April, 1998 1 Meg SRAM, R42HD Technology, Fab 4 Qualification CY7C109/CY7C1009 128K x 8 SRAM 5V Operation Cypress Semiconductor, Inc. 128K x 8 SRAM - R42DH Technology - Fab 4 Device: CY7C109 (7C109H)


    Original     		PDF R42HD CY7C109/CY7C1009 R42DH CY7C109 7C109H) 32-pin, 400-mil CY7C109-VC 7C109A CY7C109

    Untitled

    Abstract: No abstract text available
    Text: CY7C109B CY7C1009B 128K x 8 Static RAM Features put Enable OE , and three-state drivers. Writing to the device is accomplished by taking Chip Enable One (CE1) and Write Enable (WE) inputs LOW and Chip Enable Two (CE2) input HIGH. Data on the eight I/O pins (I/O 0 through I/O 7) is then


    Original     		PDF CY7C109B CY7C1009B

    CY7C1009V33

    Abstract: CY7C109V33
    Text: 3 CY7C1009V33 CY7C109V33 PRELIMINARY 128K x 8 Static RAM Features memory expansion is provided by an active LOW chip enable CE1 , an active HIGH chip enable (CE2), an active LOW output enable (OE), and three-state drivers. Writing to the device is accomplished by taking chip enable one (CE1) and write


    Original     		PDF CY7C1009V33 CY7C109V33 CY7C1009V33 CY7C109V33

    Untitled

    Abstract: No abstract text available
    Text: CY7C109D CY7C1009D 1-Mbit 128K x 8 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C109B/CY7C1009B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power The CY7C109D/CY7C1009D is a high-performance CMOS


    Original     		PDF CY7C109D CY7C1009D CY7C109B/CY7C1009B 32-pin 400-Mil CY7C1009D 300-Mil

    cy7c109b-15vc

    Abstract: CY7C109B-15VI 109b1 cypress semiconductor cy7c109b-20zi
    Text: CY7C1009B CY7C109B CY7C1009B 128K x 8 Static RAM Features • High speed — tAA = 12 ns • Low active power — 495 mW max. 12 ns • Low CMOS standby power — 55 mW (max.) 4 mW • 2.0V Data Retention • Automatic power-down when deselected • TTL-compatible inputs and outputs


    Original     		PDF 1CY7C1009B CY7C109B CY7C1009B cy7c109b-15vc CY7C109B-15VI 109b1 cypress semiconductor cy7c109b-20zi

    SOJ package MSL

    Abstract: 7C109A CY7C109 JESD22 R42HD R42HD FAB4
    Text: Cypress Semiconductor Qualification Report QTP# 98085 VERSION 1.0 June, 1998 1 Meg SRAM, R42HD Technology, Hot Aluminum CY7C109/CY7C1009 128K x 8 SRAM 5V Operation Cypress Semiconductor, Inc. 1 Meg SRAM - R42HD Technology, Hot Al - Fab 4 Device: CY7C109 (7C109H)


    Original     		PDF R42HD CY7C109/CY7C1009 CY7C109 7C109H) R42HD 32-pin, 400-mil SOJ package MSL 7C109A CY7C109 JESD22 R42HD FAB4

    9200

    Abstract: cel 9200 hitachi mold cel 8361H JESD22 cel hitachi CEL-9200
    Text: Cypress Semiconductor Qualification Report QTP# 97174 VERSION 1.0 June, 1997 Hitachi CEL 9200/9200U Molding Compound Cypress Semiconductor Hitachi CEL 9200/9200U Moding Compound Device: CY7C1009/CY7C199 Package: SOJ/TSOP QTP# 97174, V. 1.0 Page 2 of 7 Jun, 1997


    Original     		PDF 9200/9200U CY7C1009/CY7C199 28-pins 8361H JESD22-A112 85C/85 CY7C1009-VC 9200 cel 9200 hitachi mold cel 8361H JESD22 cel hitachi CEL-9200

    CY7C1009D

    Abstract: CY7C109D TSOP 66 thermal resistance
    Text: CY7C109D CY7C1009D 1-Mbit 128 K x 8 Static RAM Features Functional Description [1] • Pin- and function-compatible with CY7C109B/CY7C1009B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 80 mA at 10 ns ■ Low CMOS standby power ❐ ISB2 = 3 mA


    Original     		PDF CY7C109D CY7C1009D CY7C109B/CY7C1009B CY7C109D/CY7C1009D CY7C1009D CY7C109D TSOP 66 thermal resistance

    cy7c109bnl

    Abstract: CY7C109BNL-15VC CY7C1009BN CY7C109BN
    Text: CY7C109BN CY7C1009BN 128K x 8 Static RAM Functional Description[1] Features • High speed The CY7C109BN/CY7C1009BN is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE1 , an active HIGH Chip Enable (CE2), an active LOW


    Original     		PDF CY7C109BN CY7C1009BN CY7C109BN/CY7C1009BN cy7c109bnl CY7C109BNL-15VC CY7C1009BN CY7C109BN

    CY7C1009

    Abstract: 7C1009 A14C
    Text: PRELIMINARY r y f|pPA RJL- lrP Anni I CY7C1009 128Kx 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW The CY7C1009 is a high-performance


    OCR Scan     		PDF CY7C1009 550-mil CY7C1009 7C1009 A14C

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1089 =mmmm rrm - CY7C1009V33 C Y7C109 V33 PRELIMINARY 128K x 8 Static RAM memory expansion is provided by an active LOW chip enable CE-| , an active HIGH chip enable (CE2), an active LOW out­ put enable (OE), and three-state drivers. Writing to the device


    OCR Scan     		PDF CY7C1009V33 Y7C109

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1047 CY7C109 CY7C1009 ^C YPR ESS 128K x 8 Static RAM active HIGH chip enable CE 2 , an active LOW output enable (OE), and three-state drivers. Writing to the device is accom plished by taking chip enable one (CE-|) and write enable (WE) inputs LOW and chip enable two (CE 2 ) input HIGH. Data on


    OCR Scan     		PDF CY7C109 CY7C1009

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY7C1009 128K x 8 Static R AM Features Functional Description • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW • 2.0V data retention optional — 100 ^iW • AvaUable in 450 x 550-mil LCC


    OCR Scan     		PDF CY7C1009 550-mil CY7C1009

    G 1009l

    Abstract: CY7C1009 CY7C109
    Text: fax id: 1047 CY7C109 CY7C1009 CYPRESS 128K x 8 Static RAM Features active HIG H chip enable C E 2 , an active LO W ou tput enable (OE), and three -state drivers. W riting to the device is a cco m ­ plished by takin g chip enable one (CE-|) and w rite enable (WE)


    OCR Scan     		PDF CY7C109 CY7C1009 CY7C1009 G 1009l

    V32 Package

    Abstract: CY7C1009V33 CY7C109V33
    Text: CY7C1009V33 CY7C109V33 iF c y p r e s s 128K x 8 Static RAM Features memory expansion is provided by an active LOW Chip Enable CE-| , an active HIGH Chip Enable (CE2), an active LOW Out­ put Enable (OE), and three-state drivers. Writing to the device is accomplished by taking Chip Enable one (CE-|) and Write


    OCR Scan     		PDF CY7C1009V33 CY7C109V33 128Kx CY7C109V33/CY7C1009V33 V32 Package CY7C1009V33 CY7C109V33

    CY7C1009

    Abstract: atc 11
    Text: BSö^bba aaati7Gt. 3 MbE D CY P R ES S S E M I C O N D U C T O R CY7C1009 ADVANCED INFORMATION “ CYPRESS SEMICONDUCTOR 128K x 8 Static R/W RAM Functional Description Features • Highspeed — tAA = 15 ns • CMOS for optimum speed/power • Low active power


    OCR Scan     		PDF CY7C1009 CY7C1009 300-mil-wideDIPs I/02E 7C1009-15 7C1009-20 7C1Q09â atc 11

    Untitled

    Abstract: No abstract text available
    Text: 7C1009: 1 1 -2 5 -9 1 Revision: Monday, January 11,1993 — ^ MAR S 3 1993 PRELIMINARY CYPRESS SEMICONDUCTOR CY7C1009 128Kx 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW


    OCR Scan     		PDF 7C1009: CY7C1009 128Kx 550-mil CY7C1009

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CYPRESS SEMICONDUCTOR Functional Description • High speed T he CY7C1009 is a high-perform ance CM O S static R A M organized as 131,072 w ords by 8 bits. Easy m em ory expansion is provided by an active L O W chip enable C E i , an active H IG H chip e n a ble ( C E 2),


    OCR Scan     		PDF CY7C1009 550-mil

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY ÌJS i CYPRESS 128Kx 8 Static RAM Features Functional Description • H igh speed The CY7C1009 is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CE] , an active HIGH chip enable (CE2),


    OCR Scan     		PDF 128Kx CY7C1009 550-m