CY7C1021V30 Search Results

CY7C1021V30

Abstract: CY7C1021V30-15BAI
Contextual Info: CY7C1021V30 64K x 16 Static RAM Features W riting to the device is a cco m plished by takin g C hip Enable CE and W rite Enable (W E) inputs LOW. If Byte Low Enable (BLE) is LOW, then da ta from I/O pins (l/O-i throu gh l/Og), is w ritten into the location specified on th e address pins (A0

Contextual Info: fax id: 1083 C 'i- PRELIMINARY CY7C1021V30 64K Features X 16 Static RAM Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BEE) is LOW, then data from I/O pins (l/Oi through l/0 8), is written into the location specified on the address pins (A0

CY7C1021V30

Abstract: CY7C1021V30-15BSI
Contextual Info: fax id: 1083 1CY 7C10 21 V ADVANCED INFORMATION CY7C1021V30 64K x 16 Static RAM Features • 3.0V operation 2.7V–3.3V • High speed — tAA = 15 ns • CMOS for optimum speed/power • Low active power (L version) — 462 mW (max.) • Low CMOS Standby Power (L version)

b548

Abstract: CY7C1021V30 CY7C1021V30-15BSI CY7C1021V30L-15BSI
Contextual Info: fax id: 1083 ADVANCED INFORMATION ^;aaazgg s t CY7C1021V30 ; U I F lm ß b ö 64K Features X 16 Static RAM Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/O-i through l/0 8), is

Contextual Info: CY7C1021V30 64K x 16 Static RAM Features • 3.0V operation 2.7V–3.3V • High speed — tAA = 15 ns • CMOS for optimum speed/power • Low active power (L version) — 462 mW (max.) • Low CMOS Standby Power (L version) — 1.65 mW (max.) • Automatic power-down when deselected

CY7C1021V30

Contextual Info: fax id: 1083 PRELIMINARY CY7C1021V30 64K x 16 Static RAM Features • 3.0V operation 2.7V–3.3V • High speed — tAA = 15 ns • CMOS for optimum speed/power • Low active power (L version) — 462 mW (max.) • Low CMOS Standby Power (L version) — 1.08 mW (max.)

Contextual Info: fax id: 1083 PRELIMINARY CY7C1021V30 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/0-| through l/Og), is written into the location specified on the address pins (Aq

Contextual Info: fax id: 1083 C Y 7 C 1 0 2 1 V 3 0 64K X 16 Static RAM Writing to the device is accomplished by taking chip enable UE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins ( l/0 1 through l/0 8), is written into the location specified on the address pins (A0

Contextual Info: C Y 7 C 1021 V 30 CYPRESS 64K x 16 Static RAM Features W riting to the device is a c c o m plished by takin g C hip Enable CE and W rite Enable (W E) inputs LOW. If Byte Low Enable (BLE) is LOW, then da ta from I/O pins (l/0-| throu gh l/Og), is w ritten into the location spe cifie d on th e address pins (A0

verilog for SRAM 512k word 16bit

Abstract: CY62512V CYM74P436 192-Macrocell 62128 sram 7C1350 Triton P54C palce16v8 programming guide 7C168A intel 16k 8bit RAM chip
Contextual Info: Product Selector Guide Static RAMs Organization/Density Density X1 X4 4K X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195 7C199 7C1399/V 62256/V 62256V25 62256V18

Contextual Info: fax id: 1083 W CYPRESS ADVANCED INFORMATION C Y 7 C 10 2 1 V 30 64K x 16 Static RAM Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/0-| through l/0 8), is