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    CY7C109 Price and Stock

    Infineon Technologies AG CY7C109D-10ZXIT

    IC SRAM 1MBIT PARALLEL 32TSOP I
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    DigiKey CY7C109D-10ZXIT Cut Tape 2,980 1
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    CY7C109D-10ZXIT Digi-Reel 2,980 1
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    CY7C109D-10ZXIT Reel 1,500 1,500
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    Mouser Electronics CY7C109D-10ZXIT 550
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    Infineon Technologies AG CY7C109D-10ZXI

    IC SRAM 1MBIT PARALLEL 32TSOP I
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    DigiKey CY7C109D-10ZXI Tray 2,763 1
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    Avnet Americas CY7C109D-10ZXI Tray 8 Weeks 780
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    Mouser Electronics CY7C109D-10ZXI 1,109
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    Verical CY7C109D-10ZXI 4,231 6
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    CY7C109D-10ZXI 770 16
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    Arrow Electronics CY7C109D-10ZXI 4,231 8 Weeks 1
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    Rochester Electronics CY7C109D-10ZXI 917 1
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    Infineon Technologies AG CY7C109D-10VXIT

    IC SRAM 1MBIT PARALLEL 32SOJ
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    DigiKey CY7C109D-10VXIT Digi-Reel 1,813 1
    • 1 $4.44
    • 10 $3.942
    • 100 $3.4985
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    CY7C109D-10VXIT Cut Tape 1,813 1
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    CY7C109D-10VXIT Reel 1,500 750
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    Mouser Electronics CY7C109D-10VXIT 580
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    Infineon Technologies AG CY7C109D-10VXI

    IC SRAM 1MBIT PARALLEL 32SOJ
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    DigiKey CY7C109D-10VXI Tube 417 1
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    Mouser Electronics CY7C109D-10VXI 1,737
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    • 10 $3.51
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    Verical CY7C109D-10VXI 1,103 10
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    CY7C109D-10VXI 1,045 5
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    Arrow Electronics CY7C109D-10VXI 1,045 8 Weeks 1
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    TME CY7C109D-10VXI 1
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    Chip1Stop CY7C109D-10VXI Tube 1,103
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    Flip Electronics CY7C109D-10ZXI

    IC SRAM 1MBIT PARALLEL 32TSOP I
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    DigiKey CY7C109D-10ZXI Tray 416
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    CY7C109 Datasheets (171)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY7C109 Cypress Semiconductor 128Kb x8 Static RAM Original PDF
    CY7C109 Cypress Semiconductor 128K x 8 Static RAM Original PDF
    CY7C109 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    CY7C109-10VC Cypress Semiconductor 128K x 8 Static RAM, TTL-compatible, 10ns Original PDF
    CY7C109-10VC Cypress Semiconductor 128K x 8 Static RAM Original PDF
    CY7C109-12VC Cypress Semiconductor 128K x 8 Static RAM Original PDF
    CY7C109-12VC Cypress Semiconductor 128K x 8 Static RAM, TTL-compatible, 12ns Original PDF
    CY7C109-12VC Cypress Semiconductor 128K x 8 Static RAM Original PDF
    CY7C109-12VCT Cypress Semiconductor 128K x 8 Static RAM Original PDF
    CY7C109-12ZC Cypress Semiconductor 128K x 8 Static RAM Original PDF
    CY7C109-12ZC Cypress Semiconductor 128K x 8 Static RAM, TTL-compatible, 12ns Original PDF
    CY7C109-15PC Cypress Semiconductor 128K x 8 Static RAM Scan PDF
    CY7C109-15VC Cypress Semiconductor 128K x 8 Static RAM, TTL-compatible, 15ns Original PDF
    CY7C109-15VC Cypress Semiconductor 128K x 8 Static RAM Original PDF
    CY7C109-15VC Cypress Semiconductor 128K x 8 Static RAM Original PDF
    CY7C109-15VC Cypress Semiconductor 128K x 8 Static RAM Scan PDF
    CY7C109-15VCT Cypress Semiconductor 128K x 8 Static RAM Original PDF
    CY7C109-15VI Cypress Semiconductor 128K x 8 Static RAM Original PDF
    CY7C109-15VIT Cypress Semiconductor 128K x 8 Static RAM Original PDF
    CY7C109-15ZC Cypress Semiconductor 128K x 8 Static RAM Original PDF
    ...

    CY7C109 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cy7c109l-15vi

    Abstract: CY7C109L15VI CY7C109L CY7C1009 CY7C109 CY7C1009-15VI cy7c109-15zc CY7C109-15VI
    Text: CY7C109 CY7C1009 128K x 8 Static RAM Features • High speed — tAA = 10 ns • Low active power — 1017 mW max., 12 ns • Low CMOS standby power — 55 mW (max.), 4 mW (Low-power version) • 2.0V Data Retention (Low-power version) • Automatic power-down when deselected


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    PDF CY7C109 CY7C1009 CY7C109 CY7C1009 cy7c109l-15vi CY7C109L15VI CY7C109L CY7C1009-15VI cy7c109-15zc CY7C109-15VI

    Untitled

    Abstract: No abstract text available
    Text: THIS SPEC IS OBSOLETE Spec No: 38-05038 Spec Title: CY7C109B, CY7C1009B 128K X 8 STATIC RAM Sunset Owner: Prashanth Jnanendra PRAS Replaced by: NONE CY7C109B CY7C1009B 128K x 8 Static RAM Functional Description[1] Features • High speed The CY7C109B/CY7C1009B is a high-performance CMOS


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    PDF CY7C109B, CY7C1009B CY7C109B CY7C1009B 400-mil-wide 32-pin 300-mil-wide CY7C109B/CY7C1009B

    Untitled

    Abstract: No abstract text available
    Text: CY7C109D CY7C1009D 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features • Pin- and function-compatible with CY7C109B/CY7C1009B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 80 mA at 10 ns ■ Low CMOS standby power ❐ ISB2 = 3 mA


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    PDF CY7C109D CY7C1009D CY7C109B/CY7C1009B CY7C109D 32-pin 400-Mil CY7C1009D 300-Mil

    CY7C1009

    Abstract: CY7C109
    Text: fax id: 1047 CY7C109 CY7C1009 128K x 8 Static RAM Features • High speed — tAA = 10 ns • Low active power — 1017 mW max., 12 ns • Low CMOS standby power — 55 mW (max.), 4 mW (Low power version) • 2.0V Data Retention (Low power version) • Automatic power-down when deselected


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    PDF CY7C109 CY7C1009 CY7C1009 CY7C109

    7C109A

    Abstract: CY7C106A CY7C109 JESD22
    Text: Qualification Report December 1996 QTP# 96053/96081, Version 1.2 1 Meg SRAM - R28 Technology CY7C106A 256K x 4 Static RAM CY7C109 128K x 8 Static RAM PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part


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    PDF CY7C106A CY7C109 32-pin, 400-mil 7C109A 85C/85 CY7C109-VCB CY7C109-VC 7C109A CY7C106A CY7C109 JESD22

    7C109A

    Abstract: CY7C109
    Text: Cypress Semiconductor Qualification Report QTP# 98064 VERSION 1.0 April, 1998 1 Meg SRAM, R42HD Technology, Fab 4 Qualification CY7C109/CY7C1009 128K x 8 SRAM 5V Operation Cypress Semiconductor, Inc. 128K x 8 SRAM - R42DH Technology - Fab 4 Device: CY7C109 (7C109H)


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    PDF R42HD CY7C109/CY7C1009 R42DH CY7C109 7C109H) 32-pin, 400-mil CY7C109-VC 7C109A CY7C109

    Untitled

    Abstract: No abstract text available
    Text: CY7C109B CY7C1009B 128K x 8 Static RAM Features put Enable OE , and three-state drivers. Writing to the device is accomplished by taking Chip Enable One (CE1) and Write Enable (WE) inputs LOW and Chip Enable Two (CE2) input HIGH. Data on the eight I/O pins (I/O 0 through I/O 7) is then


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    PDF CY7C109B CY7C1009B

    CY7C1009V33

    Abstract: CY7C109V33
    Text: 3 CY7C1009V33 CY7C109V33 PRELIMINARY 128K x 8 Static RAM Features memory expansion is provided by an active LOW chip enable CE1 , an active HIGH chip enable (CE2), an active LOW output enable (OE), and three-state drivers. Writing to the device is accomplished by taking chip enable one (CE1) and write


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    PDF CY7C1009V33 CY7C109V33 CY7C1009V33 CY7C109V33

    Untitled

    Abstract: No abstract text available
    Text: CY7C109D CY7C1009D 1-Mbit 128K x 8 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C109B/CY7C1009B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power The CY7C109D/CY7C1009D is a high-performance CMOS


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    PDF CY7C109D CY7C1009D CY7C109B/CY7C1009B 32-pin 400-Mil CY7C1009D 300-Mil

    cy7c109b-15vc

    Abstract: CY7C109B-15VI 109b1 cypress semiconductor cy7c109b-20zi
    Text: 1CY7C1009B CY7C109B CY7C1009B 128K x 8 Static RAM Features • High speed — tAA = 12 ns • Low active power — 495 mW max. 12 ns • Low CMOS standby power — 55 mW (max.) 4 mW • 2.0V Data Retention • Automatic power-down when deselected • TTL-compatible inputs and outputs


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    PDF 1CY7C1009B CY7C109B CY7C1009B cy7c109b-15vc CY7C109B-15VI 109b1 cypress semiconductor cy7c109b-20zi

    SOJ package MSL

    Abstract: 7C109A CY7C109 JESD22 R42HD R42HD FAB4
    Text: Cypress Semiconductor Qualification Report QTP# 98085 VERSION 1.0 June, 1998 1 Meg SRAM, R42HD Technology, Hot Aluminum CY7C109/CY7C1009 128K x 8 SRAM 5V Operation Cypress Semiconductor, Inc. 1 Meg SRAM - R42HD Technology, Hot Al - Fab 4 Device: CY7C109 (7C109H)


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    PDF R42HD CY7C109/CY7C1009 CY7C109 7C109H) R42HD 32-pin, 400-mil SOJ package MSL 7C109A CY7C109 JESD22 R42HD FAB4

    CY7C1009D

    Abstract: CY7C109D TSOP 66 thermal resistance
    Text: CY7C109D CY7C1009D 1-Mbit 128 K x 8 Static RAM Features Functional Description [1] • Pin- and function-compatible with CY7C109B/CY7C1009B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 80 mA at 10 ns ■ Low CMOS standby power ❐ ISB2 = 3 mA


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    PDF CY7C109D CY7C1009D CY7C109B/CY7C1009B CY7C109D/CY7C1009D CY7C1009D CY7C109D TSOP 66 thermal resistance

    cy7c109bnl

    Abstract: CY7C109BNL-15VC CY7C1009BN CY7C109BN
    Text: CY7C109BN CY7C1009BN 128K x 8 Static RAM Functional Description[1] Features • High speed The CY7C109BN/CY7C1009BN is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE1 , an active HIGH Chip Enable (CE2), an active LOW


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    PDF CY7C109BN CY7C1009BN CY7C109BN/CY7C1009BN cy7c109bnl CY7C109BNL-15VC CY7C1009BN CY7C109BN

    CY7C1009

    Abstract: CY7C109 7C109-25 cypress cy7c109-20zi
    Text: CY7C109 CY7C1009 128K x 8 Static RAM Features • High speed — tAA = 10 ns • Low active power — 1017 mW max., 12 ns • Low CMOS standby power — 55 mW (max.), 4 mW (Low power version) • 2.0V Data Retention (Low power version) • Automatic power-down when deselected


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    PDF CY7C109 CY7C1009 CY7C1009 CY7C109 7C109-25 cypress cy7c109-20zi

    CY7C1009D-10VXI

    Abstract: CY7C109D-10VXI a5 gnd
    Text: CY7C109D CY7C1009D 1-Mbit 128K x 8 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C109B/CY7C1009B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power The CY7C109D/CY7C1009D is a high-performance CMOS


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    PDF CY7C109D CY7C1009D CY7C109B/CY7C1009B 32-pin 400-Mil CY7C1009D 300-Mil CY7C1009D-10VXI CY7C109D-10VXI a5 gnd

    CY7C1009B

    Abstract: CY7C109B
    Text: CY7C109B CY7C1009B 128K x 8 Static RAM Features put Enable OE , and three-state drivers. Writing to the device is accomplished by taking Chip Enable One (CE1) and Write Enable (WE) inputs LOW and Chip Enable Two (CE2) input HIGH. Data on the eight I/O pins (I/O 0 through I/O 7) is then


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    PDF CY7C109B CY7C1009B CY7C1009B CY7C109B

    7C109A

    Abstract: CY7C106A CY7C109 JESD22
    Text: Qualification Report December 1996, QTP# 96313, Version 1.1 1 Meg SRAM - R28 Technology CY7C106A 256K x 4 Static RAM CY7C109 128K x 8 Static RAM PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part


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    PDF CY7C106A CY7C109 32-pin, 400-mil 7C109A CY7C109-VC 85C/85 7C109A CY7C106A CY7C109 JESD22

    AB26S

    Abstract: 7C109A CY7C109 CY7C109A
    Text: CY7C109A PRELIMINARY l ^wSSQBBSf S S ySSt Ì p YJe JkP XRI- XjiïJF ^ 128KX 8 Static RAM Features Functional Description • H ighspeed The CY7C109A is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable


    OCR Scan
    PDF CY7C109A 128Kx CY7C109A AB26S 7C109A CY7C109

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1047 CY7C109 CY7C1009 ^C YPR ESS 128K x 8 Static RAM active HIGH chip enable CE 2 , an active LOW output enable (OE), and three-state drivers. Writing to the device is accom plished by taking chip enable one (CE-|) and write enable (WE) inputs LOW and chip enable two (CE 2 ) input HIGH. Data on


    OCR Scan
    PDF CY7C109 CY7C1009

    Untitled

    Abstract: No abstract text available
    Text: CY7C109 CYPRESS F u n c tio n a l D escrip tio n F e a tu re s • High speed — tAA = 20 ns • • C M O S for optim um speed/pow er Low active power — 770 mW • Low standby power — 165 mW • A utom atic power-down when deselected • T T L -com patible inputs and outputs


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    PDF CY7C109 --20P --25P --25V --35V 400-M

    G 1009l

    Abstract: CY7C1009 CY7C109
    Text: fax id: 1047 CY7C109 CY7C1009 CYPRESS 128K x 8 Static RAM Features active HIG H chip enable C E 2 , an active LO W ou tput enable (OE), and three -state drivers. W riting to the device is a cco m ­ plished by takin g chip enable one (CE-|) and w rite enable (WE)


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    PDF CY7C109 CY7C1009 CY7C1009 G 1009l

    V32 Package

    Abstract: CY7C1009V33 CY7C109V33
    Text: CY7C1009V33 CY7C109V33 iF c y p r e s s 128K x 8 Static RAM Features memory expansion is provided by an active LOW Chip Enable CE-| , an active HIGH Chip Enable (CE2), an active LOW Out­ put Enable (OE), and three-state drivers. Writing to the device is accomplished by taking Chip Enable one (CE-|) and Write


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    PDF CY7C1009V33 CY7C109V33 128Kx CY7C109V33/CY7C1009V33 V32 Package CY7C1009V33 CY7C109V33

    7C109A-20

    Abstract: 7C109A
    Text: CY7C109A PRELIMINARY S F # SEMICONDUCTOR 128K x 8 Static RAM Features Functional Description • High speed — tAA = 12 ns • CMOS for optimum speed/power The CY7C109A is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is


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    PDF CY7C109A CY7C109A 32-Lead 400-Mil) 32-Pin 7C109A-20 7C109A

    CY7C109L

    Abstract: CY7C109L-15VI 7C1009 A15C CY7C1009 CY7C109
    Text: CY7C109 CY7C1009 CYPRESS 128K Features 8 Static RAM able OE , and th re e -sta te drivers. W ritin g to the device is ac­ com p lish ed by takin g C hip Enable O ne (CE-|) and W rite En­ able (W E) inputs LO W and C hip Enable Two (CEg) input HIGH. D ata on the eigh t I/O pins (l/O 0 throu gh l/ 0 7) is then w ritten


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    PDF CY7C109 CY7C1009 1017mW CY7C109 CY7C1009 128Kx CY7C109L CY7C109L-15VI 7C1009 A15C