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TT Electronics plc D1011UKTR RF MOSFET Transistors DIODE-RF
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TTI	D1011UKTR	Bulk			500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TT Electronics Power and Hybrid / Semelab Limited D1011UK RF POWER TRANSISTOR
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Richardson RFPD	D1011UK				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
TT Electronics Power and Hybrid / Semelab Limited D1011UKT/R RF POWER TRANSISTOR
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Richardson RFPD	D1011UKT/R				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

D1011UK Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
D1011UK		Semelab	Metal Gate RF Silicon FET		Original	PDF	16.91KB	2

D1011UK Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
D1011UK Contextual Info: TetraFET D1011UK.01 METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 21W PEP – 28V – 150MHz H K FEATURES M L J • SIMPLIFIED AMPLIFIER DESIGN E F G • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D1011UK 150MHz	PDF
D1011UK Contextual Info: TetraFET D1011UK METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 500MHz SINGLE ENDED H K FEATURES M L J E F • SIMPLIFIED AMPLIFIER DESIGN G • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D1011UK 500MHz 24swg D1011UK	PDF
transistor mhz s-parameter low-noise VHF Abstract: D1011UK Contextual Info: TetraFET D1011UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 500MHz SINGLE ENDED H K FEATURES M L J E F • SIMPLIFIED AMPLIFIER DESIGN G • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D1011UK 500MHz 24swg transistor mhz s-parameter low-noise VHF D1011UK	PDF
Contextual Info: nil Vrrr= TetraFET mi D1011UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W-28V-1GHZ SINGLE ENDED I D f C A I FEATURES • SIMPLIFIED AMPLIFIER DESIGN G • SUITABLE FOR BROAD BAND APPLICATIONS S08PACKAGE	OCR Scan	D1011UK 0W-28V-1GHZ S08PACKAGE	PDF
Contextual Info: TetraFET D1011UK-DBC METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 A 3 6 F 5 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 500MHz SINGLE ENDED L I P H G FEATURES DBC1 Package PIN 1 Source PIN 5 Source • SIMPLIFIED AMPLIFIER DESIGN	Original	D1011UK-DBC 500MHz	PDF
VDB50 Contextual Info: PR EL IM INA RY TetraFET D1011UK-P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss	Original	D1011UK-P VDB50	PDF
Contextual Info: TetraFET D1011UK METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P H GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 500MHz SINGLE ENDED K FEATURES M L J E F • SIMPLIFIED AMPLIFIER DESIGN G • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D1011UK 500MHz 24swg	PDF
Contextual Info: Mil TetraFET Etti IMI SEME D1011UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 28V - 1GHz SINGLE ENDED 4. FEATURES • SIMPLIFIED AMPLIFIER DESIGN -Vj * • SUITABLE FOR BROAD BAND APPLICATIONS S08PACKAGE	OCR Scan	D1011UK S08PACKAGE 100mA	PDF
D1011UK Contextual Info: TetraFET D1011UK METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED H K FEATURES M L J • SIMPLIFIED AMPLIFIER DESIGN E F G • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D1011UK D1011UK	PDF
Contextual Info: TetraFET D1011UK-DBC METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 A 3 6 F 5 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 500MHz SINGLE ENDED L I P H G FEATURES DBC1 Package PIN 1 Source PIN 5 Source • SIMPLIFIED AMPLIFIER DESIGN	Original	D1011UK-DBC 500MHz 250SQ	PDF
Contextual Info: TetraFET D1011UK METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 500MHz SINGLE ENDED H K FEATURES M L J E F • SIMPLIFIED AMPLIFIER DESIGN G • SUITABLE FOR BROAD BAND APPLICATIONS	Original	D1011UK 500MHz 050All 24swg	PDF
transistor 5cw Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10 Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000	Original	CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10	PDF
Diode 400V 5A Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM	Original	2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN	PDF
D2030* equivalent Abstract: F0127 F-Q127 P0127 Contextual Info: Sem eiab is pleased to announce a new range o f surface-m ount RF^SOSFEFs in the F-0127 package to com plem ent its existing range in the fa m ilia r SO8 package, The F-Q127 package o ffe rs several benefits to users com pared w ith the SOB package: • Easter attachm ent to a PCB	OCR Scan	F-0127 F-Q127 D1011UK D1211UK D2019UK D2020UK D2219UK D2220UK D2221UK D1031UK D2030* equivalent F0127 P0127	PDF