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    D2012 Search Results

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    D2012 Price and Stock

    Kingbright APTD2012LSYCK

    LED YELLOW CLEAR 2012 SMD
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    DigiKey APTD2012LSYCK Reel 21,000 3,000
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    Mouser Electronics APTD2012LSYCK 6,163
    • 1 $0.41
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    • 100 $0.142
    • 1000 $0.111
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    TTI APTD2012LSYCK Reel 3,000
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    New Advantage Corporation APTD2012LSYCK 6,000 1
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    Sager APTD2012LSYCK 3,000
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    TDK Corporation MLD2012SR47TTD25

    FIXED IND 470NH 1.2A 120MOHM SMD
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    DigiKey MLD2012SR47TTD25 Reel 4,000 4,000
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    MLD2012SR47TTD25 Cut Tape 4,000 1
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    MLD2012SR47TTD25 Digi-Reel 4,000 1
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    Wolfspeed E4D20120A

    DIODE SIL CARB 1200V 54.5A TO220
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    DigiKey E4D20120A Tube 453 1
    • 1 $21.61
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    TME E4D20120A 1
    • 1 $9.47
    • 10 $7.53
    • 100 $6.77
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    Richardson RFPD E4D20120A 16 1
    • 1 $12.69
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    Wolfspeed C4D20120D

    DIODE ARR SIC 1200V 34A TO247-3
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    DigiKey C4D20120D Tube 448 1
    • 1 $15.88
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    Mouser Electronics C4D20120D 794
    • 1 $14.17
    • 10 $11.49
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    TME C4D20120D 1
    • 1 $15.4
    • 10 $12.2
    • 100 $11.4
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    Richardson RFPD C4D20120D 1
    • 1 $11.58
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    Chip One Stop C4D20120D Tube 1,082
    • 1 $13.6
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    • 1000 $6.96
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    Wolfspeed C4D20120H

    DIODE SIL CARB 1200V 54A TO2472
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    DigiKey C4D20120H Bulk 398 1
    • 1 $16.41
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    Mouser Electronics C4D20120H 368
    • 1 $9.85
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    TME C4D20120H 1
    • 1 $16.5
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    • 100 $11.8
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    Richardson RFPD C4D20120H 1
    • 1 $12.07
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    • 100 $11.45
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    Chip One Stop C4D20120H Tube 241
    • 1 $8.73
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    Find more D2012 price and stock on Findchips.com

    D2012 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    D 20 12 Gedore Torque SOCKET 1/4"" 12 MM Original PDF
    D2012 Unknown Si NPN TRANSISTOR Original PDF
    D 20 1/2AF Gedore Torque SOCKET 1/4"" 1/2"" Original PDF
    D2012UK Semelab Metal Gate RF Silicon FET Original PDF
    D2012UK Semelab GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 28V - 1GHz SINGLE ENDED Original PDF
    D2012UK Unknown Shortform Datasheet & Cross References Data Short Form PDF

    D2012 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    9507 marking

    Abstract: D2012 transistor d2012
    Text: SAW Bandpass Filter 203651B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		203651B D2012 04A001 NM3017-CS02 9507 marking D2012 transistor d2012 PDF

    D2012

    Abstract: No abstract text available
    Text: SAW Bandpass Filter 241904B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2


    Original     		241904B D2012 06A001 NM6002-CS01 D2012 PDF

    D2012

    Abstract: 88621
    Text: SAW Bandpass Filter 202174C 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1


    Original     		202174C D2012 05A001 NM5014-CS02 D2012 88621 PDF

    D2012

    Abstract: transistor d2012 T D2012 transistor d2012 T D2012 D2012
    Text: SAW Bandpass Filter 242002B 1. Features IF bandpass filter High attenuation Single-ended operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 Dimensions shown are nominal in millimeters


    Original     		242002B D2012 08A001 NM8047-CS01 D2012 transistor d2012 T D2012 transistor d2012 T D2012 D2012 PDF

    25160

    Abstract: D2012
    Text: SAW Bandpass Filter 251601B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		251601B D2012 04A001 NM3032-CS03 25160 D2012 PDF

    10840

    Abstract: D2012
    Text: SAW Bandpass Filter 252602B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 Dimensions shown are nominal in millimeters


    Original     		252602B D2012 06A001 NM6019-CS01 10840 D2012 PDF

    NM4002-CS01

    Abstract: D2012
    Text: SAW Bandpass Filter 270802B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		270802B D2012 04A001 NM4002-CS01 NM4002-CS01 D2012 PDF

    D2012

    Abstract: 11515DB
    Text: SAW Bandpass Filter 203629B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		203629B D2012 04A001 203SWR NI2029-CS03 D2012 11515DB PDF

    D2012

    Abstract: No abstract text available
    Text: SAW Bandpass Filter 253004B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -30℃ ~ 80℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		253004B D2012 06A001 NM6028-CS01 D2012 PDF

    20PF

    Abstract: D2012 252101
    Text: SAW Bandpass Filter 252101B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 Dimensions shown are nominal in millimeters


    Original     		252101B D2012 06A001 NM6018-CS01 20PF D2012 252101 PDF

    D2012

    Abstract: No abstract text available
    Text: SAW Bandpass Filter 201096B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		201096B D2012 04A001 NI0033-CS04 D2012 PDF

    09310

    Abstract: 7686 D2012
    Text: SAW Bandpass Filter 203608B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		203608B D2012 04A001 DS4018-CS02 09310 7686 D2012 PDF

    D2012

    Abstract: No abstract text available
    Text: SAW Bandpass Filter 253010B 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Base : Fe(SPCC), Au plating over Ni plated


    Original     		253010B D2012 09A001 CENTER125. NM9023-CS01 D2012 PDF

    D2012

    Abstract: 61M10
    Text: SAW Bandpass Filter 203649B G 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40ଇ ~ 85ଇ Electrostatics Sensitive Device ESD Package : D2012 ^U]•WUY 1 4 Base : Fe(SPCC), Au plating over Ni plated


    Original     		203649B D2012 421-809G 04A001 NW4012-CS01 D2012 61M10 PDF

    D2012

    Abstract: 593790
    Text: SAW Bandpass Filter 233004B 1. Features IF bandpass filter High attenuation Single-ended operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Dimensions shown are nominal in millimeters


    Original     		233004B D2012 08A001 NM8004-CS01 D2012 593790 PDF

    transistor d2012

    Abstract: D2012
    Text: SAW Bandpass Filter 242003B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2


    Original     		242003B D2012 06A001 NM6015-CS01 transistor d2012 D2012 PDF

    D2012

    Abstract: No abstract text available
    Text: SAW Bandpass Filter 221904B 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Base : Fe(SPCC), Au plating over Ni plated


    Original     		221904B D2012 07A001 NM7037-CS01 D2012 PDF

    D2012

    Abstract: No abstract text available
    Text: SAW Bandpass Filter 250506B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2


    Original     		250506B D2012 06A001 CENTER140. NW6001-CS01 D2012 PDF

    transistor D2012

    Abstract: No abstract text available
    Text: TetraFET D2012UK.04 METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 450mW Average 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		D2012UK 450mW transistor D2012 PDF

    transistor d2012

    Abstract: d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012
    Text: D2012 YOUDA TRANSISTOR Si NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


    Original     		D2012 TRANSISTOR--D2012 transistor d2012 d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012 PDF

    D2012

    Abstract: No abstract text available
    Text: D2012 YOUDA TRANSISTOR SI NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


    Original     		D2012 D2012 PDF

    D2012UK

    Abstract: No abstract text available
    Text: TetraFET D2012UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		D2012UK D2012UK PDF

    D2012

    Abstract: No abstract text available
    Text: SAW Bandpass Filter 201532B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		201532B D2012 04A001 201RT NM3009-CS02 D2012 PDF

    8930

    Abstract: D2012
    Text: SAW Bandpass Filter 203624B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		203624B D2012 04A001 203SWR NI1016-CS02 8930 D2012 PDF