DCR1673SZ Search Results

5088A

Abstract: DCR1673SZ DCR1673SZ24 DCR1673SZ25 DCR1673SZ26 DCR1673SZ27 DCR1673SZ28
Contextual Info: DCR1673SZ DCR1673SZ Phase Control Thyristor Supersedes October 2000 version, DS4650-6.0 DS4650-7.0 July 2001 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 2800V ■ High Surge Capability IT AV 5088A ITSM 83000A dVdt* 1000V/µs dI/dt 250A/µs ■ High Mean Current

JIS Z 1522

Abstract: jis z 1522 CT
Contextual Info: M ITEL DCR1673SZ Phase Control Thyristor SEMICONDUCTOR Supersedes March 1998 version, DS4650 - 3.3 DS4650 - 4.0 April 199 Features • Double Side Cooling. • High Surge Capability. • High Mean Current. • Fatigue Free. Key Parameters 2800V DRM 3600A

Contextual Info: DCR1673SZ DCR1673SZ Phase Control Thyristor Supersedes July 2001 version, DS4650-7.0 DS4650-8.0 February 2004 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 2800V IT AV 5088A ITSM 83000A dVdt* 1000V/µs dI/dt 250A/µs ■ High Surge Capability ■ High Mean Current

DCR1673SA27

Contextual Info: DCR1673SA DCR1673SA Phase Control Thyristor Replaces DCR1673SZ issue July 2001 version, DS4650-7.0 FDS5646-1.0 August 2003 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 2800V IT AV 5088A ITSM 83000A dVdt* 1000V/µs dI/dt 250A/µs ■ High Surge Capability

Contextual Info: DCR1673SZ DCR1673SZ Phase Control Thyristor Supersedes July 2001 version, DS4650-7.0 DS4650-8.0 February 2004 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 2800V IT AV 5088A ITSM 83000A dVdt* 1000V/µs dI/dt 250A/µs ■ High Surge Capability ■ High Mean Current

AV38

Contextual Info: M ITEL DCR1673SZ Phase Control Thyristor SEMICONDUCTOR Supersedes June 1997 version, DS4650 - 3.2 DS4650 - 3.3 APPLICATIONS • High Pow er Drives. ■ High V oltage Pow er Supplies. ■ DC M otor C ontrol. March 1998 KEY PARAMETERS 2800V DRM 3600A Jt AV

Thyristor 1000v

Contextual Info: DCR1673SZ DCR1673SZ Phase Control Thyristor Supersedes October 2000 version, DS4650-6.0 DS4650-7.0 July 2001 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 2800V ■ High Surge Capability IT AV 5088A ITSM 83000A dVdt* 1000V/µs dI/dt 250A/µs ■ High Mean Current

5088A

Abstract: DCR1673SZ DCR1673SZ24 DCR1673SZ25 DCR1673SZ26 DCR1673SZ27 DCR1673SZ28
Contextual Info: DCR1673SZ DCR1673SZ Phase Control Thyristor Supersedes July 2001 version, DS4650-7.0 DS4650-8.0 February 2004 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 2800V IT AV 5088A ITSM 83000A dVdt* 1000V/µs dI/dt 250A/µs ■ High Surge Capability ■ High Mean Current

5088A

Abstract: DCR1673SZ DCR1673SZ24 DCR1673SZ25 DCR1673SZ26 DCR1673SZ27 DCR1673SZ28
Contextual Info: DCR1673SZ DCR1673SZ Phase Control Thyristor Supersedes October 2000 version, DS4650-6.0 DS4650-7.0 July 2001 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 2800V ■ High Surge Capability IT AV 5088A ITSM 83000A dVdt* 1000V/µs dI/dt 250A/µs ■ High Mean Current

AN4506

Abstract: 75000A AN4870 Turn-on performance of thyristors in parallel AN4840
Contextual Info: DCR1673SZ MITEL Phase Control Thyristor S E M IC O N D U C T O R Supersedes March 1998 version, DS4650 - 3.3 DS4650 - 4.0 April 199 Key Parameters 2800V DRM 3600A Jt AV 75000A TSM dVdt 1000V/(is d l/d t 250A/(is Features • Double Side Cooling. • High Surge Capability.

Contextual Info: G E C S i P L E S S E Y j u n e i 997 SEMI CO NDUC TOR S DS4650-3.2 DCR1673SZ PHASE CONTROL THYRISTOR APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. KEY PARAMETERS VDRM 2800V 't ,a v , 3600A Itsm 75000A dVdt* 1000V/ is

DCR504ST

Abstract: DCR604SE DCR720E DCR803SG DCR806SG DCR818SG DCR820SG DCR504
Contextual Info: AN5001 Application Note AN5001 Use Of The VTO, rT On-state Characteristic Model Application Note Replaces July 2002 version, AN5001-4.1 AN5001-5.0 October 2002 The use of the VTO, rT on-state characteristic model and a more accurate alternative. where A, B, C and D are constants with values specific to the

DIODE GE

Abstract: DCR604SE DCR504S GE brand thyristor thyristor Vtm 6.5 DCR504ST DCR720E DCR803SG DCR806SG DCR818SG
Contextual Info: AN5001 Application Note AN5001 Use Of The VTO, rT On-state Characteristic Model Application Note Replaces February 2003 version, AN5001-6.0 AN5001-7.0 February 2004 The use of the VTO, rT on-state characteristic model and a more accurate alternative. where A, B, C and D are constants with values specific to the

ln 4871

Abstract: DCR504S
Contextual Info: AN5001 Use Of The VTO, rT On-state Characteristic Model Application Note AN5001-1.1 June 1998 The use of the VTO, rT on-state characteristic model and a more accurate alternative. The inclusion of the theoretical terms VTO and rT in power semiconductor data sheets allows a simple means of calculating power

BST45

Abstract: DCR806 DCR604SE
Contextual Info: phase control th y ris to rs discs 1 Pt D isc D evices l2t @ T v| V IT TO @ T v) @ T vl (kA) (A2sx103) (V) (mil) 717 6.8 231 1.05 1850 1045 1511 2694 3600 2900 1641 2374 4230 5655 32.5 14 26.25 50 61.2 5280 975 3440 12500 18750 100-2100 100-2800 100-2800

MP02X

Abstract: DCR10 DYNEX DG648 DCR1596SW DIM200PHM33
Contextual Info: a lp h a n u m e r ic p a r t lis t Part No. ACR300SG ACR400SE ACR44U DCR1002SF DCR1003SF DCR1006SF DCR1008SF DCR1020SF DCR1021SF DCR1374SBA DCR1375SBA DCR1376SBA DCR1474SY DCR1475SY DCR1476SY DCR1478SY DCR1574SY DCR1575SY DCR1576SY DCR1594SW DCR1595SW DCR1596SW