DD323 Search Results

BGY60

Abstract: DIN45004B 386 amplifier philips vhf amplifier module BI 340
Contextual Info: bbSBTBl Philips Sem iconductors Hybrid VHF push-pull amplifier module DD32347 3ÖÖ N AMER PHILIPS / D I S C R E T E PIN CONFIGURATION • Extremely low noise 1 input pre-stage • Silicon nitride passivation 2 common • Rugged construction 3 common • TiPtAu metallized crystals ensure

BGD504

Abstract: BGD502 DIN45004B 550 mhz catv power doubler
Contextual Info: bbS3T31 Philips Semiconductors DD3231b 7Q4 CATV power doubler amplifier modules IAPX Product specification BGD502;BGD504 N AUER PH ILI PS/DISCRE TE PINNING -SO T 115C FE A T U R E S • Extremely low noise • Silicon nitride passivation • Rugged construction

TM-35

Abstract: BGD106 DIN45004B
Contextual Info: Philips Semiconductors bbS3^31 DD32312 DLT IAPX Product specification CATV power doubler amplifier module BGD106 N AMER PHILIPS/DISCRETE PINNING -SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation

Contextual Info: bbS3R31 Philips Semiconductors DD32351 B OR M l APX Product specification CATV amplifier module — — BGY65 — N AflER PHILIPS/DISCRETE PINNING -SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation

BGY581

Abstract: BGY580 DIN45004B
Contextual Info: Philips Semiconductors • LtiS3T31 DD323Û1 54b CATV amplifier modules ■ APX IProductspecification BGY580;BGY581 N AP1ER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING-SOT115C • Excellent linearity • Extremely low noise DESCRIPTION PIN 1 input

Contextual Info: bb53331 Philips Semiconductors DD32313 m 3 M l APX CATV amplifier module Product specification BGD506 — N AUER PHILIPS/DISCRETE PINNING-SOT115C FEATURES PIN CONFIGURATION DESCRIPTION PIN • Excellent linearity • Extremely low noise 1 input • Silicon nitride passivation

Contextual Info: bbS3^31 DD323bb 23T « A P X Philips Semiconductors Product specification BGY84A;BGY85A CATV amplifier modules N AnER PHILIPS/DISCRETE PINNING-SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation

BGY85A

Abstract: BGY84A DIN45004B philips hybrid amplifier modules
Contextual Info: Philips Semiconductors bbSa'iBl DD323bb 23T IAPX Product specification BGY84A;BGY85A CATV amplifier modules N AMER PHILIPS/] ISCRETE PINNING -SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION ♦ Extremely low noise 1 input • Silicon nitride passivation

BGE88

Abstract: philips hybrid amplifier modules
Contextual Info: Philips Sem iconductors DD3233b ST2 CATV amplifier module I APX Product specification BGE88;BGE88/01 N AMER PHILIPS/DISCRETE FEATURES PINNING -S O T 1 1 5 C PIN • Excellent linearity • Extremely low noise 1 PIN CONFIGURATION DESCRIPTION input • Silicon nitride passivation

ca555

Abstract: CA555C LIMING RELAY LM555C MC1555 harris SE555 CA555 DIP MC1455 NE555 SE555
Contextual Info: HA R R I S S E M I C O N D S E C T O R 4GE D • M 3 0 2 2 7 1 D D 3 S 3 3 4 7 ■ HAS T 1 } H a r r i s C A 5 5 5 , C L A M 5 5 5 5 C 5 5 C , * Timers For Timing Delays & Oscillator Applications in Commercial, Industrial & Military Equipment August 1991 Features

Contextual Info: TOSHIBA TLCS-900 Series TMP96C031N/F CMOS 16-bit Microcontrollers TMP96C031N/TMP96C031F 1. Outline and Device Characteristics The TMP96C031 are high-speed advanced 16-bit microcon­ trollers developed for controlling medium to large-scale equip­ ment. TMP96C031N comes in a 64-pin shrink DIP; the

Contextual Info: HM51W17800 Series 2,097,152-word x 8-bit Dynamic RAM HITACHI ADE-203-664C Z Rev. 3.0 Feb. 24,1997 Description The Hitachi HM51W17800 is a CMOS dynamic RAM organized 2,097,152-word x 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17800 offers Fast

BGY67

Abstract: DIN45004B
Contextual Info: bbSSTBl Philips Sem iconductors 0032353 bfll M A P X Product specification BGY67 CATV amplifier module N APER PHILIPS/DISCRETE P IN N IN G -S O T 1 1 5 C FEATURES PIN • Excellent linearity 1 input • Silicon nitride passivation 2 comm on • Rugged construction

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM300GA120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FZ400R12KE3_B1 IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values #F3BF2$32%132214DDD& F3F23326F4&3 ' 6*6+,- ./01 6 2 6 . #F3BF23432&32F

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS15R06VL4_B2 Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values C3 B2!"BB32#1322E14DDD F3FB23"BB326B43

Contextual Info: Technische Information / technical information FS30R06VE3 IGBT-Module IGBT-modules Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values C3 B2!"BB32#1322E14DDD F3FB23"BB326B43

Y6W 35

Contextual Info: Technische Information / technical information FP30R06YE3 IGBT-Module IGBT-modules Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values C3 B2!"BB32#1322E14DDD F3FB23"BB326B43

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DDB6U25N16VR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values A325EF36!F"#6$1B%3DE1322E14DDD &' 6 6*+,

3240B

Contextual Info: HM5241605C Series 131,072-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-381B Z Rev. 2.0 Jan. 7, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5241605C is offered in 2 banks for improved performance.

LTC4098-3.6

Abstract: SXA-01GW-P0.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS10R06VL4 B2 Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values C3!B2"#BB32$1322E14DDD F3FB23#BB326B43

amplifier 446 mhz

Abstract: BGY86 BGY87 DIN45004B
Contextual Info: 0032372 Philips Semiconductors 533 • APX Product specification BGY86;BGY87 CATV amplifier modules N AriER PHILIPS/ DI SCRE TE PINNING -SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation

LTC4098-3.6

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FZ2400R12KE3 IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values #F3BF2$%32&132214DDD' F3F23%326F4'3 *6+6, -./0 6 " 6 - #F3BF21432'32F%

BGD601

Contextual Info: bbiB'm Philips Semiconductors 0032323 lì44 I AP X Product specification BGD601 CATV amplifier module N AUER P H I L I P S / D I S C R E T E PINNING-SOT115C FEATURES DESCRIPTION PIN • Excellent linearity PIN CONFIGURATION input • Extremely low noise 1