DDDD133 Search Results

C30902E

Abstract: C30904E avalanche photodiodes C30817 C30905E C30908E C30916E
Contextual Info: R C A INC/ ELECTRO OPTICS 10E D • 7484k7S DDDD133 3 | r- Vi-íi C30904E. C30905E. C30908E Silicon Avalanche Photodiodes Developmental Types Silicon Avalanche Photodiodes With Integral Light Pipes — Desigred Especially for Optical Communication Systems

Contextual Info: - METALIZED POLYCARBONATE TYPICAL CHARACTERISTICS: % CAPACITANCE CHANGE TEMPERATURE: RATED V O LT A G E FROM -5 5 °C TO +125°C. DIELECTRIC VOLTAGE TEST: W IL L W ITH STA N D THE APP LIC A TIO N OF 200% R ATED V O LT A G E , A T 25°C, FOR A PERIOD OF TIM E NOT TO EXCEED ONE