DFN1006 Search Results
DFN1006 Price and Stock
INPAQ Technology Co Ltd TVL9VB1S-DFN1006-2LDGTVS DIODE 9VWM 16VC DFN1006 |
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TVL9VB1S-DFN1006-2LDG | Digi-Reel | 49,941 | 1 |
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INPAQ Technology Co Ltd TVL7VB1S-DFN1006-2LDGTVS DIODE 7VWM 12.8VC DFN1006 |
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TVL7VB1S-DFN1006-2LDG | Cut Tape | 48,343 | 1 |
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INPAQ Technology Co Ltd TVW5VB1C-DFN1006-2LDGTVS DIODE 5VWM 18VC DFN1006 |
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TVW5VB1C-DFN1006-2LDG | Digi-Reel | 47,825 | 1 |
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INPAQ Technology Co Ltd TVL12VB1S-DFN1006-2LDGTVS DIODE 12VWM 19.5VC DFN1006 |
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TVL12VB1S-DFN1006-2LDG | Cut Tape | 43,263 | 1 |
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INPAQ Technology Co Ltd TVN3V3B1S-DFN1006-2LDGTVS DIODE 3.3VWM 6.6VC DFN1006 |
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TVN3V3B1S-DFN1006-2LDG | Digi-Reel | 24,651 | 1 |
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DFN1006 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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A12 diode
Abstract: diode 0450
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DFN1006) MIL-STD-750, C/10s IEC61000-4-2 IEC61000-4-4 5/50s) 8/20s A12 diode diode 0450 | |
Contextual Info: TESDQ5V0 Bi-directional ESD Protection Diode Small Signal Diode DFN1006 0402 Features Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) 100W Peak Pulse Power per Line (tp=8/20 s) Protects one birectional I/O line |
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DFN1006 IEC61000-4-2 IEC61000-4-4 5/50s) 8/20s) DFN1006 UL94V-0 MIL-STD-750, C/10s | |
Contextual Info: SO T8 83 B PESD5V0X2UAMB Ultra low capacitance unidirectional double ESD protection diode 10 April 2014 Product data sheet 1. General description Ultra low capacitance unidirectional double ElectroStatic Discharge ESD protection diode in a DFN1006B-3 (SOT883B) leadless ultra small Surface-Mounted Device (SMD) |
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DFN1006B-3 OT883B) IEC61000-4-2 AEC-Q101 | |
Contextual Info: SO T8 83 B PMZB950UPE 20 V, P-channel Trench MOSFET 28 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench |
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PMZB950UPE DFN1006B-3 OT883B) | |
SCS0240DF
Abstract: DFN1006-2
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SCS0240DF DFN1006-2 05REF 65TYP 08-Dec-2010 SCS0240DF DFN1006-2 | |
ds3-0505
Abstract: BAS16LP BAS16LP-7 DFN1006-2 A6 marking marking a6
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BAS16LP DFN1006-2 AEC-Q101 DS30505 ds3-0505 BAS16LP BAS16LP-7 DFN1006-2 A6 marking marking a6 | |
Contextual Info: 83B PDTA115TMB SO T8 PNP resistor-equipped transistor; R1 = 100 k , R2 = open Rev. 1 — 2 July 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. |
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PDTA115TMB DFN1006B-3 OT883B) PDTC115TMB. AEC-Q101 | |
DFN1006-2
Abstract: SDM10U45LP SDM10U45LP-7
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SDM10U45LP DFN1006-2 J-STD-020C MIL-STD-202, DS30588 DFN1006-2 SDM10U45LP SDM10U45LP-7 | |
PDTA123YMB
Abstract: PDTC123YMB
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PDTC123YMB DFN1006B-3 OT883B) PDTA123YMB. AEC-Q101 PDTA123YMB PDTC123YMB | |
PDTC123JMBContextual Info: 83B PDTA123JMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 k , R2 = 47 k Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. |
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PDTA123JMB DFN1006B-3 OT883B) PDTC123JMB. AEC-Q101 PDTC123JMB | |
PDTA123YMB
Abstract: PDTC123YMB
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PDTA123YMB DFN1006B-3 OT883B) PDTC123YMB AEC-Q101 PDTA123YMB PDTC123YMB | |
PDTA143Z
Abstract: PDTA143ZMB PDTC143ZMB PDTA143
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PDTA143ZMB DFN1006B-3 OT883B) PDTC143ZMB. AEC-Q101 PDTA143Z PDTA143ZMB PDTC143ZMB PDTA143 | |
Contextual Info: 83B PDTA143TMB SO T8 PNP resistor-equipped transistor; R1 = 4.7 k , R2 = open Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. |
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PDTA143TMB DFN1006B-3 OT883B) PDTC143TMB. AEC-Q101 | |
PDTC144WMBContextual Info: 83B PDTA144WMB SO T8 PNP resistor-equipped transistor; R1 = 47 k , R2 = 22 k Rev. 1 — 2 July 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. |
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PDTA144WMB DFN1006B-3 OT883B) PDTC144WMB. AEC-Q101 PDTC144WMB | |
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Contextual Info: D5V0L1B2LP4 ADVANCE INFORMATION LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Features Mechanical Data • Provides ESD Protection per IEC 61000-4-2 Standard: • Air – ±30kV, Contact – ±30kV • • Case: X2-DFN1006-2 Case Material: Molded Plastic, “Green” Molding Compound. UL |
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X2-DFN1006-2 IEC61000-4-4 5/50ns) IEC61000-4-5 J-STD-020 MILSTD-202, DS35586 | |
Contextual Info: 83B PDTC123EMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 1 — 3 April 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. |
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PDTC123EMB DFN1006B-3 OT883B) PDTA123EMB. AEC-Q101 | |
NXP SMD ic MARKING CODE
Abstract: smd code marking ft sot23 marking 41 sot23 nxp
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2PA1774xMB DFN1006B-3 OT883B) 2PA1774QMB 2PA1774RMB 2PA1774SMB OT883B 2PC4617QMB NXP SMD ic MARKING CODE smd code marking ft sot23 marking 41 sot23 nxp | |
TRANSISTOR SMD MARKING CODE 57
Abstract: PDTC114YMB PDTA114YMB
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PDTC114YMB DFN1006B-3 OT883B) PDTA114YMB. AEC-Q101 TRANSISTOR SMD MARKING CODE 57 PDTC114YMB PDTA114YMB | |
SMD TRANSISTOR MARKING 2X
Abstract: PDTA143
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PDTC143TMB DFN1006B-3 OT883B) PDTA143TMB. AEC-Q101 SMD TRANSISTOR MARKING 2X PDTA143 | |
transistor smd code marking 102
Abstract: TRANSISTOR SMD 2X K
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PDTC124TMB DFN1006B-3 OT883B) PDTA124TMB. AEC-Q101 transistor smd code marking 102 TRANSISTOR SMD 2X K | |
Contextual Info: 83B 2N7002BKMB SO T8 60 V, single N-channel Trench MOSFET Rev. 1 — 11 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench |
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2N7002BKMB DFN1006B-3 OT883B) | |
PDTA144
Abstract: nxp MARKING CC PDTC144V
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PDTA144VMB DFN1006B-3 OT883B) PDTC144VMB. AEC-Q101 PDTA144 nxp MARKING CC PDTC144V | |
Contextual Info: 83B PMBT3906MB SO T8 40 V, 200 mA PNP switching transistor Rev. 1 — 2 April 2012 Product data sheet 1. Product profile 1.1 General description PNP single switching transistor in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package. |
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PMBT3906MB DFN1006B-3 OT883B) PMBT3904MB. AEC-Q101 | |
transistor smd code marking 101Contextual Info: 83B PDTC115EMB SO T8 NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ Rev. 1 — 1 June 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. |
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PDTC115EMB DFN1006B-3 OT883B) PDTA115EMB. AEC-Q101 transistor smd code marking 101 |