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    DFN2020 Search Results

    DFN2020 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    DFN2020-6
    		NXP Semiconductors AN11304 - MOSFET load switch PCB with thermal measurement Original PDF 909.42KB 21
    DFN2020MD-6
    		NXP Semiconductors AN11304 - MOSFET load switch PCB with thermal measurement Original PDF 909.42KB 21
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    DFN2020 Price and Stock

    Nexperia

    Nexperia BUK6D56-60EX

    MOSFETs SOT1220 N-CH 60V 4A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BUK6D56-60EX Reel 255,000 3,000
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    Nexperia BUK6D385-100EX

    MOSFETs SOT1220 100V 3.7A N-CH TRENCH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BUK6D385-100EX Reel 90,000 3,000
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    Nexperia PMCPB5530X,115

    MOSFETs SOT1118 NPCH 20V 4A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PMCPB5530X,115 Reel 57,000 3,000
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    Nexperia PMPB23XNE,115

    MOSFETs SOT1220 N-CH 20V 7A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PMPB23XNE,115 Reel 48,000 3,000
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    Nexperia PBSS5330PASX

    Bipolar Transistors - BJT SOT1061 30V 3A PNP BISS TRAN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PBSS5330PASX Reel 12,000 3,000
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    Find more DFN2020 price and stock on Findchips.com

    DFN2020 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PMPB15XP 12 V, single P-channel Trench MOSFET 19 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PMPB15XP DFN2020MD-6 OT1220) PDF

    Contextual Info: N3 PTVSxU1UPA series HU SO 300 W Transient Voltage Suppressor Rev. 1 — 6 March 2014 Product data sheet 1. Product profile 1.1 General description 300 W unidirectional Transient Voltage Suppressor TVS in a DFN2020-3 (SOT1061) leadless medium power Surface-Mounted Device (SMD) plastic package, designed for


    Original     		DFN2020-3 OT1061) AEC-Q101 PDF

    Contextual Info: DF N2 020 -6 PBSS4160PANP 60 V, 1 A NPN/PNP low VCEsat BISS transistor 14 January 2013 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS4160PANP DFN2020-6 OT1118) PBSS4160PAN. PBSS5160PAP. AEC-Q101 PDF

    DFN2020

    Abstract: DMS2120LFWB power diode package DFN3020 632 diode DMP2160UFDB
    Contextual Info: New Product Announcement MOSFET solutions save space and improve performance The DMS2220LFDB and DMS2120LFWB co-package a 20V P-channel enhancement mode MOSFET with a companion diode in a choice of 2mmx2mm DFN2020 and 3mmx2mm DFN3020 packages. The DMP2160UFDB, copackages two of the same


    Original     		DMS2220LFDB DMS2120LFWB DFN2020 DFN3020 DMP2160UFDB, DFN2020 DMP2160UFDB DMS2220LFDB power diode package DFN3020 632 diode DMP2160UFDB PDF

    DFN2020-6

    Contextual Info: 020 -6 PMDPB55XP DF N2 20 V, dual P-channel Trench MOSFET Rev. 3 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


    Original     		PMDPB55XP DFN2020-6 OT1118) DFN2020-6 PDF

    marking code 2Q

    Contextual Info: PBSS4260PANP 60 V, 2 A NPN/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS4260PANP DFN2020-6 OT1118) PBSS4260PAN. PBSS5260PAP. AEC-Q101 marking code 2Q PDF

    NXP SMD TRANSISTOR MARKING CODE s1

    Contextual Info: PMDPB55XP 20 V, dual P-channel Trench MOSFET Rev. 2 — 2 May 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


    Original     		PMDPB55XP DFN2020-6 OT1118) NXP SMD TRANSISTOR MARKING CODE s1 PDF

    SMD TRANSISTOR MARKING 2e

    Abstract: 2e SMD PNP TRANSISTOR
    Contextual Info: PBSS5130PAP 30 V, 1 A PNP/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS5130PAP DFN2020-6 OT1118) PBSS4130PANP. PBSS4130PAN. AEC-Q101 SMD TRANSISTOR MARKING 2e 2e SMD PNP TRANSISTOR PDF

    npn transistor footprint

    Contextual Info: PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS4260PAN DFN2020-6 OT1118) PBSS4260PANP. PBSS5260PAP. AEC-Q101 npn transistor footprint PDF

    smd diode marking 2U

    Abstract: smd diode marking codes 2U smd diode code marking 2U marking 2U 28 diode DIODE smd marking 2U diode SMD marking code 2u 2U marking code diode smd smd diode marking 2U 40 marking 2U diode smd
    Contextual Info: PMDPB95XNE 30 V dual N-channel Trench MOSFET 26 September 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


    Original     		PMDPB95XNE DFN2020-6 OT1118) smd diode marking 2U smd diode marking codes 2U smd diode code marking 2U marking 2U 28 diode DIODE smd marking 2U diode SMD marking code 2u 2U marking code diode smd smd diode marking 2U 40 marking 2U diode smd PDF

    Contextual Info: MSWSH-020-24-DFN2020 PIN DIODE SHUNT SWITCH ELEMENT 1 2 3 Molded Plastic DFN2020 Description Features • • • • A broadband, high linearity, medium power shunt switch element in a 2.0 X 2.0 mm DFN package. This device is designed for wireless telecommunications infrastructure


    Original     		MSWSH-020-24-DFN2020 DFN2020) A17162 PDF

    marking N7

    Contextual Info: DMN1019UFDE Green 12V N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) max 12V 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V Package ID max TA = +25°C U-DFN2020-6 Type E 11A 10 9A 8A 5A • •


    Original     		DMN1019UFDE AEC-Q101 U-DFN2020-6 DS35561 marking N7 PDF

    Contextual Info: DF N 20 20 MD -6 PMPB40SNA 60 V N-channel Trench MOSFET 2 July 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PMPB40SNA DFN2020MD-6 OT1220) AEC-Q101 PDF

    Contextual Info: DF N 20 20 MD -6 PMPB85ENEA 60 V, single N-channel Trench MOSFET 19 December 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PMPB85ENEA DFN2020MD-6 OT1220) AEC-Q101 PDF

    DMN2015UFDE

    Contextual Info: DMN2015UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) max Package 11.6mΩ @ VGS = 4.5V 20V 15mΩ @ VGS = 2.5V ID max TA = +25°C 10.5A U-DFN2020-6 Type E 9.4A Description Applications • • • 0.6mm profile – ideal for low profile applications


    Original     		DMN2015UFDE U-DFN2020-6 AEC-Q101 DS35560 DMN2015UFDE PDF

    PMDPB70EN

    Contextual Info: PMDPB70EN 30 V, dual N-channel Trench MOSFET Rev. 1 — 25 April 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


    Original     		PMDPB70EN DFN2020-6 OT1118) PMDPB70EN PDF

    marking code 1s

    Contextual Info: PMPB33XP 20 V, single P-channel Trench MOSFET 5 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PMPB33XP DFN2020MD-6 OT1220) marking code 1s PDF

    Contextual Info: DF N 20 20 MD -6 NX2020P1 30 V, single P-channel Trench MOSFET 22 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		NX2020P1 DFN2020MD-6 OT1220) PDF

    Contextual Info: DF N2 020 -6 PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat BISS transistor 23 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS5160PAP DFN2020-6 OT1118) PBSS4160PANP. PBSS4160PAN. AEC-Q101 PDF

    Contextual Info: 0'  SOT1220 ' 1   DFN2020MD-6; reel pack; standard product orientation; 12NC ending 115 Rev. 2 — 19 February 2013 Packing information 1. Packing method Printed plano box Barcode label Reel Tape QA Seal Preprinted ESD warning PQ-label permanent) Circular sprocket holes opposite the


    Original     		OT1220 DFN2020MD-6; 001aak603 DFN2020 OT1220 PDF

    marking n8

    Contextual Info: DMN6040SFDE 60V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary ID max TA = +25°C RDS ON max Package 38mΩ @ VGS = 10V U-DFN2020-6 Type E V(BR)DSS 60V Features and Benefits 47mΩ @ VGS = 4.5V 6.5A 5.2A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMN6040SFDE U-DFN2020-6 AEC-Q101 DS35792 marking n8 PDF

    Contextual Info: PMPB13XNE 30 V, single N-channel Trench MOSFET 30 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using


    Original     		PMPB13XNE DFN2020MD-6 OT1220) PDF

    Contextual Info: PBSS4130PANP 30 V, 1 A NPN/PNP low VCEsat BISS transistor 12 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS4130PANP DFN2020-6 OT1118) PBSS4130PAN. PBSS5130PAP. AEC-Q101 PDF

    NXP SMD TRANSISTOR MARKING CODE s1

    Contextual Info: 020 -6 PMDPB58UPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 19 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic


    Original     		PMDPB58UPE DFN2020-6 OT1118) NXP SMD TRANSISTOR MARKING CODE s1 PDF