DG151 Search Results

DG151BP

Contextual Info: designed for . • . S Silicanix B EN EFITS • Switching High Frequencies Switching in Satellite Applications DG151 DG153 2-Channel Drivers with SPST and DPST FET Switches Higher Signal Bandwidth Switching Capa­ bilities o OFF Isolation > 6 0 dB @ 1 MHz

Contextual Info: designed for . S Siliconix BENEFITS Switching High Frequencies Switching in Satellite Applications Portable, Battery Operated Circuits Low Signal Distortion Switching Circuits such as Audio Switching • Higher Signal Bandw idth DG151 DG153 2-Channel Drivers with SPST

Contextual Info: I Ordering number : EN% 50831 CMOS LSI LC321667BJ, BM, BT-70/80 1 MEG 65536 words x 16 bits DRAM EDO Page Mode, Byte Write Preliminary Overview Package Dimensions The LC321667B series is a CMOS dynam ic RAM operating on a single 5 V power source and having a

DG201

Abstract: DG180 DG181 DG200 DG200A DG281 DG300 DG300A DG187
Contextual Info: Analog Switches B ask P a rt N o. N o te 1} S w itc h T yp « A n a lo g V o lta g a R anga (V (N o t« 4) rD S(on) M ax (m (N o t« 4) 'D io ff) (n A I S w itc h in g T im « (/iS0C) *O N *OFF Logic L«v«ls <V> V IN L V IN H (+ } Sup. V + O p t. S u p p ly V o lta g e

SONY OPTICAL PICK-UP 313

Abstract: DA0601 CXA1372 CXD2510Q DA11 DA16 CXD251OQ 47latch 63A23
Contextual Info: SONY CXD2510Q CD Digital Signal Processor D escription The CXD2510Q is a digital signal processor LSI for CD players and is equipped with the following functions. • Wide frame jitter margin ±28 frames due to a builtin 32K RAM • Bit clock, which strobes the EFM signal, is

DG133

Abstract: DG140 DG129 DG141 DG126 DG151 DG151-154 dg129 -5.0 DG134
Contextual Info: Intersil Hlgh-Rellabllity Products DG 126, DG 129, DG 133, DG 134, DG 140, DG141, D G 151-154 High Reliability DUAL JFET Analog Switch GENERAL DESCRIPTION FEATURES These switching circuits contain two channels in one package, each channel consisting of a driver circuit control­

UHVP206

Abstract: UHVP202 UHVP204 UHVP208 UHVP209 UHVP210
Contextual Info: MI C R O S EM I CORP/ Ü1ATERTOÜIN 5DE D • Ü0121Î3 Tbfc « U N I T UHVP202-UHVP210 RECTIFIERS HIGH RELIABILITY, H l / W " S E R I E S 2.0 AMPS T FEATURES • Ultra Fast Recovery Time • Controlled Avalanche • High Temperature Operation with Low Loss

BF762

Contextual Info: S G S-THONSON 07C D I 7 “i2 5 3 7 OOlSlMt 0 I C O S / f f lO S V T f r , INTEGRATED |5 •- f hcc/hcf 40182B CIRCUIT 4 1C 09 167 7929225 S G S SEMICONDUCTOR CORP D J- ff-0 7 L O O K -A H E A D C A R R Y G E N E R A T O R • • • • • • • •

Contextual Info: S A M S U N G E L E C T R O N I C S INC b7E » • 7 ^ 1 4 1 4 2 GÜ1S170 flH2 I KMM5362000BH SP1GK DRAM MODULES 2M x36 DRAM SIMM Memory Module This SIMM is the x3 6 built on x 40 board FEATURES GENERAL DESCRIPTION • Performance range: ÍRAC • • •

UC1573

Contextual Info: UC1573 UC2573 UC3573 UNITRODE DESCRIPTION • Simple Single Inductor Buck PWM Stepdown Voltage Regulation • Drives External PMOS Switch • Contains UVLO Circuit The UC3573 is a Buck pulse width modulator which steps down and regu­ lates a positive input voltage. The chip is optimized for use in a single

2U30

Abstract: 40181B 40182B MC14582 UU15 HS07
Contextual Info: S G S-T HON SO N 07C D I COS/fflOS OOlSlMt V T f r , INTEGRATED |5 0 I •- f hcc/hcf 40182B CIRCUIT 4 1C 09 167 7929225 S G S SEMICONDUCTOR CORP D J- ff-0 7 LO O K -A H EA D C A R R Y G E N E R A T O R • • • • • • • • • • G E N E R A T E S H IG H -S P E E D C A R R Y A C R O S S F O U R A D D E R S O F A D D E R G R O U P S

3 DG 1000

Abstract: D0126 0G141 DG129 DG141 DG152 DG154 DG161 Analog FET Switch IDG140
Contextual Info: O M M L D 0 126, DG129, D 0 133, D G 134, D G 140, DG 141, DG151, D G 152,D G 153, D G 154 2-Channel D rivers w ith SPST and DPST F ET Sw itches FEATURES GENERAL DESCRIPTION • Each channel com plete—interfaces w ith m ost integrated logic These sw itching circu its contain tw o channels in one pack­

Contextual Info: LED READING LIGHT SOURCE B4 Size LNR314701 • ft A tz » -b 7 t 4 y ? • • l£l: fcij£ii 565nm ~660nm Î ^'M ltPT f^o • - f t ® 9 * ?m ik is jfc » ) v i, * „ ■Features • E asy setting due to wide condensing irradiation width and superior linearity.

Siliconix JFETs Dual

Abstract: DG151AP DG151 DG151A DG151BP DG153 DG153A DG153AL DG180 DG183
Contextual Info: designed fo r . . B S ili c o n ix B EN EFITS S w itchin g H igh F req u en cie s Sw itching in S a te llite A pplications P o rtab le, B a tte ry O p e ra te d Circuits • Low Sign al Distortion Sw itching Circuits such as A udio Sw itching • Higher Signal Bandwidth Switching Capa­

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

Siliconix JFET

Abstract: DG5040 DG133 DG134 DG141 DG151 DG152 DG180 DG181 DG182
Contextual Info: c o -A - Analog Switches Product Information ö £ Drive»rs and Gates 2c o d S lia CL «A <D £ à ? G 5 Basic Part No. Notes 1 & 2 Switch Type rDS(on) Max. (S) (Note 3) Analog Voltage Range (p-pV) (Note 3) Switching Time (ms) tON •o f f Logic Input for ON

e420 dual jfet

Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Contextual Info: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.