DMG6601LVT Search Results
DMG6601LVT Price and Stock
Diodes Incorporated DMG6601LVT-7Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.8 A, 3.8 A, 0.034 ohm - Product that comes on tape, but is not reeled (Alt: 82Y6568) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DMG6601LVT-7 | Ammo Pack | 111 Weeks | 5 |
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DMG6601LVT-7 | 333,564 |
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DMG6601LVT-7 | Cut Tape | 1,864 | 1 |
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DMG6601LVT-7 | Bulk | 50 |
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DMG6601LVT-7 | 170 | 15 |
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DMG6601LVT-7 | 136 |
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DMG6601LVT-7 | 2,584 | 1 |
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DMG6601LVT-7 | Reel | 24,000 | 3,000 |
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DMG6601LVT-7 | 20 Weeks | 6,000 |
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DMG6601LVT-7 | 138,000 | 10 Weeks | 3,000 |
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DMG6601LVT-7 | 93,000 | 1 |
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DMG6601LVT-7 | 478,841 |
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DMG6601LVT-7 | 78,000 |
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Zetex / Diodes Inc DMG6601LVT-7Trans MOSFET N/P-CH 30V 3.8A/2.5A 6-Pin TSOT-26 T/R |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DMG6601LVT-7 | 54,000 | 3,000 |
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Diodes Incorporated DMG6601LVT-7-01 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DMG6601LVT-7-01 | 3,000 |
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DMG6601LVT-7-01 | 1,362 |
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DMG6601LVT Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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DMG6601LVT |
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COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | Original | 392.17KB | 9 | |||
DMG6601LVT-7 |
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FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 26TSOT | Original | 9 |
DMG6601LVT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: DMG6601LVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Product Summary Q1 30V Q2 -30V RDS ON max • • • • • • ID max TA = +25°C Package 55mΩ @ VGS = 10V TSOT26 3.8A 65mΩ @ VGS = 4.5V TSOT26 3.6A 110mΩ @ VGS = -10V TSOT26 -2.5A 142mΩ @ VGS = -4.5V |
Original |
DMG6601LVT TSOT26 DS35405 | |
Contextual Info: DMG6601LVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Device V BR DSS Q1 30V Q2 -30V Features RDS(ON) max • • • • • • ID max TA = +25°C Package 55mΩ @ VGS = 10V TSOT26 3.8A 65mΩ @ VGS = 4.5V TSOT26 3.6A 110mΩ @ VGS = -10V TSOT26 -2.5A 142mΩ @ VGS = -4.5V |
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DMG6601LVT TSOT26 DS35405 | |
Contextual Info: DMG6601LVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Device V BR DSS Q1 30V Q2 -30V Features RDS(ON) max Package • ID max TA = +25°C 55mΩ @ VGS = 10V TSOT26 3.8A 65mΩ @ VGS = 4.5V TSOT26 3.6A 110mΩ @ VGS = -10V TSOT26 -2.5A |
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DMG6601LVT TSOT26 AEC-Q101 DS35405 | |
DMN63D8LContextual Info: DATE: 1st June, 2015 PCN #: 2156 PCN Title: Qualification of "Diodes Technology Cheng Du Company Limited" (CAT) as an Additional Assembly & Test Site for Discrete Products and Conversion to Copper Bond Wire on Select Discrete Products at |
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1N4448Wâ BZT52C2V4â BZT52C51â BZT52C13â BZT52B4V7â D1213Aâ DIC-034 DMN63D8L | |
AP3039AM
Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
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2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 |