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    DMP1096UCB4 Price and Stock

    Diodes Incorporated DMP1096UCB4-7

    MOSFET P-CH 12V 2.6A U-WLB1010-4
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    DMP1096UCB4 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DMP1096UCB4 Diodes Incorporated P-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    DMP1096UCB4-7 Diodes Incorporated FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 2.6A 4-UFCSP Original PDF

    DMP1096UCB4 Datasheets Context Search

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    e 102m 3kV

    Abstract: No abstract text available
    Text: DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • • This new generation MOSFET has been designed to minimize the onstate resistance RDS(on and yet maintain superior switching performance, making it ideal for high efficiency power management


    Original     		PDF DMP1096UCB4 AEC-Q101 U-WLB1010-4 DS31954 e 102m 3kV

    Untitled

    Abstract: No abstract text available
    Text: DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 102mΩ @ VGS = -4.5V -2.6A 116mΩ @ VGS = -2.5V -2.4A V(BR)DSS • • • • • • • -12V Description and Applications • • • Low Qg & Qgd Small Footprint Low Profile 0.62mm height


    Original     		PDF DMP1096UCB4 AEC-Q101 WL-CSP1010H6-nd DS31954

    WL-CSP1010H6-4

    Abstract: No abstract text available
    Text: ` DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) -12V 102mΩ @ VGS = -4.5V 116mΩ @ VGS = -2.5V • • • • • • • ID TA = 25°C -2.6A -2.4A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMP1096UCB4 AEC-Q101 DS31954 WL-CSP1010H6-4

    Untitled

    Abstract: No abstract text available
    Text: ` DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) -12V 102mΩ @ VGS = -4.5V 116mΩ @ VGS = -2.5V • • • • • • • ID TA = 25°C -2.6A -2.4A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMP1096UCB4 DS31954

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original     		PDF 2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502