DPDD16MX8RSBY5 Search Results

ddr 3 tsop

Abstract: TSOP 56 LAYOUT TSOP 66 Package
Contextual Info: 128 Megabit CMOS DDR SDRAM DPDD16MX8RSBY5 DESCRIPTION: The 128 Megabit LP-StackTM module DPDD16MX8RSBY5, based on 64 Mbit devices, has been designed to fit the same footprint as the 8 Meg x 8 DDR SDRAM TSOP monolithic. This allows for system upgrade without electrical or

Contextual Info: 128 Megabit C M O S D D R SDRAM DPDD16MX8RLBY5 DPDD16MX8RSBY5 DENSE-PAC MICROSYSTEMS ADVANCED INFORMATION DESCRIPTION: PIN-OUT DIAGRAM The PL-Sack series is a family of interchangeable memory devices The 128 Megabit Double Data Rate Synchronous D RAM isa member

Contextual Info: 128 Megabit CMOS DDR SDRAM DPDD16MX8RSBY5 PRELIMINARY PIN-OUT DIAGRAM DESCRIPTION: The LP-StackTM series is a family of interchangeable memory devices. The 128 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 128 Megabit CMOS DDR SDRAM DPDD16MX8RSBY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory modules. The 128 Megabit Double Data Rate Synchronous DRAM module is a member of this family which utilizes the space saving LP-Stack™ TSOP stacking technology. The devices are

TSOP 56 LAYOUT

Abstract: TSOP 48 LAYOUT
Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 128 Megabit CMOS DDR SDRAM DPDD16MX8RSBY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory modules. The 128 Megabit Double Data Rate Synchronous DRAM module is a member of this family which utilizes the space saving LP-Stack™ TSOP stacking technology. The devices are

LP SDRAM

Abstract: LP SDRAM solution 30A223-10
Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 128 Megabit CMOS DDR SDRAM DPDD16MX8RSBY5 DESCRIPTION: FEATURES: • Electrical characteristics meet semiconductor manufacturers’ datasheet • Memory organization: 2 64Mb memory devices. Each device arranged as 8M x 8 bits (2M x 8 bits x 4 banks)

Contextual Info: DENSE-PAC MICROSYSTEMS Mt n t »a /H-Dênsus dpddigmxsribys D 128 Megabit CM O S D D R SDRAM Aa "7\ ^ High Density Memory Device pd d 16m xsrsbys ADVANCED INFORMATION DESCRIPTION: The/U-'Datitu series is a family of interchangeable memory devices. The 128 Megabit Double Data Rate Synchronous DRAM is a member

Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 128 Megabit CMOS DDR SDRAM DPDD16MX8RSAY5 DESCRIPTION: FEATURES: • Electrical characteristics meet semiconductor manufacturers’ datasheet • Memory organization: 2 64Mb memory devices. Each device arranged as 16M x 4 bits (4M x 4 bits x 4 banks)

TSOP 48 LAYOUT

Abstract: TSOP 66 Package
Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 128 Megabit CMOS DDR SDRAM DPDD16MX8RSAY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory modules. The 128 Megabit Double Data Rate Synchronous DRAM module is a member of this family which utilizes the space saving LP-Stack™ TSOP stacking technology. The devices are