DS052 Search Results

PC44

Abstract: VQ44 XAPP361 XC9500XV XC9572XV
Contextual Info: XC9572XV High-performance CPLD R DS052 v2.5 August 21, 2003 5 Features • • • • • • • • 72 macrocells with 1,600 usable gates Available in small footprint packages - 44-pin PLCC (34 user I/O pins) - 44-pin VQFP (34 user I/O pins) - 48-pin CSP (38 user I/O pins)

marking code f4 3 pin

Contextual Info: XC9572XV High-performance CPLD R DS052 v2.6 April 15, 2005 5 Product Specification Features • • • • • • • • PTOTAL = PINT + PIO = ICCINT x VCCINT + PIO 72 macrocells with 1,600 usable gates Available in small footprint packages - 44-pin PLCC (34 user I/O pins)

Contextual Info: XC9572XV High-performance CPLD R DS052 v2.3 May 31, 2002 5 Features • • • • • • • • 72 macrocells with 1,600 usable gates Available in small footprint packages - 44-pin PLCC (34 user I/O pins) - 44-pin VQFP (34 user I/O pins) - 48-pin CSP (38 user I/O pins)

PC44

Abstract: VQ44 XC9500XV XC9572XV
Contextual Info: XC9572XV High-performance CPLD R DS052 v2.2 August 27, 2001 5 Advance Product Specification Features Power Estimation • • Power dissipation in CPLDs can vary substantially depending on the system frequency, design application and output loading. To help reduce power dissipation, each macrocell

Contextual Info: XC9572XV High-performance CPLD R DS052 v2.4 June 18, 2003 5 Features • • • • • • • • 72 macrocells with 1,600 usable gates Available in small footprint packages - 44-pin PLCC (34 user I/O pins) - 44-pin VQFP (34 user I/O pins) - 48-pin CSP (38 user I/O pins)

Contextual Info: XC9572XV High-performance CPLD R DS052 v2.0 January 29, 2001 5 Advance Product Specification Features Power Estimation • • Power dissipation in CPLDs can vary substantially depending on the system frequency, design application and output loading. To help reduce power dissipation, each macrocell

DS052

Contextual Info: XC9572XV High-performance CPLD R DS052 v2.7 January 16, 2006 5 Features • • • • • • • • 72 macrocells with 1,600 usable gates Available in small footprint packages - 44-pin VQFP (34 user I/O pins) - 100-pin TQFP (72-user I/O pins) Optimized for high-performance 2.5V systems

Contextual Info: CP3UB17 www.ti.com SNOSCX6A – APRIL 2005 – REVISED DECEMBER 2013 CP3UB17 Reprogrammable Connectivity Processor with USB Interface Check for Samples: CP3UB17 1 GENERAL DESCRIPTION The CP3UB17 connectivity processor combines a powerful RISC core with on-chip SRAM and Flash

FPT-44P-M08

Abstract: MBM30LV0064 BGA-52P-M01
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20878-5E FLASH MEMORY CMOS 64M 8M x 8 BIT NAND-type MBM30LV0064 • DESCRIPTION The MBM30LV0064 device is a single 3.3 V 8M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to

FPT-48P-M19

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are

MBM29F040

Abstract: FPT-32P-M24 MBM29F040C R095
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20842-4E FLASH MEMORY CMOS 4M 512K x 8 BIT MBM29F040C-55/-70/-90 • FEATURES • • • • • • • • • • • • Single 5.0 V read, program and erase Minimizes system level power requirements Compatible with JEDEC-standard commands

FPT-48P-M19

Abstract: FPT-48P-M20 mbm28f800 MBM28F800TA 77ff
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20841-4E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

Contextual Info: ® INNOVATION and EXCELLENCE Single Output ULQ Models Low-Profile, Quarter-Brick 5-25 Amp DC/DC Converters Features • Standard quarter-brick package/pinout in through-hole or SMT version ■ Low cost; Low profile, 0.35" 8.9mm ■ 24V and 48V nominal inputs

MBM29BS64LF

Abstract: MBM29BS64LF-18 MBM29BT64LF-18
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20916-1E BURST MODE FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29BS/BT64LF-18/25 • GENERAL DESCRIPTION The MBM29BS/BT64LF is a 64M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 4M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20843-3E FLASH MEMORY CMOS 16M 2M X 8 BIT MBM29F017A-70/-90/-12 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash

29F400TC

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20851-4E FLASH MEMORY B lB 4M 512K X 8/256K x 16 BIT MBM29F400TC-55/-70/-90/MBM29F400BC-55/-70A90

FPT-48P-M19

Abstract: FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball

BGA-48P-M13

Abstract: FPT-48P-M19 FPT-48P-M20 MBM29LV160B-12PBT
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • GENERAL DESCRIPTION The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words

50REF

Abstract: FPT-48P-M19 FPT-48P-M20 MBM30LV0128
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20885-2E FLASH MEMORY CMOS 128 M 16 M x 8 BIT NAND-type MBM30LV0128 • DESCRIPTION The MBM30LV0128 device is a single 3.3 V 16 M × 8 bit NAND flash memory organized as 528 byte × 32 pages × 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are

FPT-48P-M19

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20906-1E FLASH MEMORY CMOS 16 M 2M x 8/1M × 16 BIT MirrorFlashTM* MBM29LV160TM/BM 90 • DESCRIPTION The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to

FPT-32P-M24

Abstract: MBM29F002BC MBM29F002TC
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20868-3E FLASH MEMORY CMOS 2M 256K x 8 BIT MBM29F002TC-55/-70/-90/MBM29F002BC-55/-70/-90 • FEATURES • • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20858-4E FLASH MEMORY CMOS 8M 1M x 8 BIT M B M29LV008TA-70/-90/-12/M BM29LV008B A-70/-90/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands