DS1225 Search Results

IC 2864 eeprom

Abstract: 2764 EEPROM DS1225-200 EEPROM 2864 2764 eprom PINOUT ram DS1225 ds1225 DS1225-100 2864 eeprom EEPROM 2864 CMOS
Contextual Info: DALLAS SEMICONDUCTOR CORP 3=iE D at.14130 0003364 4 Hi DAL DS1225AB/AD ' 'C ^ i b 3 7 DS1225AB/AD D A LLA S 64K Nonvolatile SRAM SEM ICONDUCTOR FEATURES A PIN DESCRIPTION • Data retention in the absence of Vco • Data Is automatically protected during power

DS1225Y

Contextual Info: DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc NC 1 1 • Data is automatically protected during power loss 28 g VCC A12 I 2 27 § WE • Directly replaces 8K x 8 volatile static RAM or EEPROM

DS1225Y

Contextual Info: DALLAS DS1225Y 64K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is autom atically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EEPROM

DS1225Y

Contextual Info: DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc NC 1 • Data is automatically protected during power loss • Low-power CMOS VCC A12 | 2 27 1 WE A7 1 3 26 1 NC A6 1 4 25 1 A8 A5 1 5 « A9

DS1225Y

Contextual Info: DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM

DS1225Y

Contextual Info: DALLAS SEMICONDUCTOR FEATURES DS1225Y 64K Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Datais automatically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EEPROM • Unlimited write cycles

DS1225AD-200

Abstract: DS1225 DS1225AB DS1225AB-70 DS1225AB-85 DS1225AD DS1225AD-85 ICC01
Contextual Info: DS1225AB/AD 64k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM

lot code

Abstract: DS1225 date code
Contextual Info: RELIABILITY MONITOR DS1225AB-200 MAY '98 MONITOR-DALLAS DEVICE REVISION DATE CODE LOT NUMBER PACKAGE ASSEMBLY SITE DS1225 S 9806 100539 28 PIN MODULE DALLAS JOB_NO DESCRIPTION P22069 P22070 CONDITION SOLDERABILITY MIL-STD-883-2003 TOTAL: PHYSICAL DIMENSIONS MIL-STD-883-2016

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1225AB May-97 9707 S DALLAS DA091356 N/A 28 MODULE STRESS/JOB NO. READPOINT Sample Size/No. of Fails Storage Life 85°C, No Bias P-19652 48 Hr

Contextual Info: RELIABILITY MONITOR DS1225AB-200 FEB '98 MONITOR-DALLAS DEVICE REVISION DATE CODE LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1225A A1 Module w/PCB 720 Dallas 9840 106494 28 JOB_NO DESCRIPTION CONDITION 23259 SOLDERABILITY MIL-STD-883-2003 TOTAL: 3 1 DAYS

Contextual Info: RELIABILITY MONITOR STRESS TESTS MODULES DEVICE STRESS All Modules* Hi Temp Storage Life DURATION SAMPLE/C CONDITIONS NOTE 48 hours 200/0 85°C / No Bias Split Lots After Stress DS1225/30/DS12887 only Hi Temp Storage Life 1000 hours 20/0 70°C / No Bias DS1643/DS5000T only

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1225AB Feb-97 9703 S DALLAS DA088517 N/A 28 MODULE STRESS/JOB NO. READPOINT Sample Size/No. of Fails Storage Life 85°C, No Bias P-19039 48 Hr

DS1225Y

Abstract: DS1225Y-200 225Y DS1225Y-150 DS1225Y-170 DS122SY
Contextual Info: 6 0 DS1225Y DALLAS SEMICONDUCTOR 64K Nonvolatile SRAM PIN ASSIGNMENT • Directly replaces 8K x 8 volatile static RAM or EEPROM . NC 1 1 28 1 VCC À12 | 2 27 1 WE A7 0 • Data is automatically protected during power loss CO • Data retention in the absence of Vcc

DS1225Y

Abstract: eeprom 2764 DS1225Y-150 DS1225Y-170 DS1225Y-200 EEPROM 2864
Contextual Info: Not Recommended for New Design DS1225Y 64k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM

EEPROM 2864

Abstract: 2864 eeprom 2764 eprom PINOUT Ram 2864 EPROM 2764 pRoM 2764 2764 EEPROM DS1225Y EEPROM 2864 CMOS DS1225
Contextual Info: DS1225Y DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of NC 1 28 VCC A12 2 27 WE A7 3 26 NC A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE • Full ±10% operating range A0 10 19

M48128Y

Abstract: ds1245y DS1225Y
Contextual Info: De usili • - S i1 ! i : i ; : í ; í ! u c í í : n 31 fVlb ro e :e o h i ■¡î i c ■. ;î.f i .1 o - DS1225AB M48Z08 DS1225AD M48Z18 bq4010Y M48Z58 bq4010/4823Y M48Z58Y bq4010Y bq4010

Ram 2864

Abstract: 2764 EEPROM 2864 EEPROM DS12250
Contextual Info: DALLAS SEMICONDUCTOR CORP BTE D B 5 b I M I 30 O Q G B B T l 1 • DAL DS1225D/E T '< i ,- 2 V V 7 D A L L A DS1225D/E 64K Nonvolatile SRAM S SEMICONDUCTOR FEATURES PIN DESCRIPTION • Data retention in the absence of V co 2 8 1 VCC 2 7 1 WE\ NC • Data is automatically write protected during

EEPROM 2864 CMOS

Contextual Info: DS1225AB/AD 64k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM

Contextual Info: DS1225AB/AD DALLAS SEMICONDUCTOR FEATURES DS1225AB/AD 64K Nonvolatile SR A M PIN ASSIGNMENT • Data retention in the absence of V c c • Data is automatically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EEPROM NC I 1 2* 1

DS1225Y

Contextual Info: DALLAS DS1225Y 64K Nonvolatile SRAM SEMICONDUCTOR PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss NC f i 1 28 g VCC A12 1 2 27 § WE A7 1 3 26 g NC A6 1 25 g

2864 eeprom

Abstract: DS1225Y-150 DS1225Y DS1225Y-200 EEPROM 2864 CMOS DS1225Y-150IND DS1225Y-170 DS1225Y-200IND EEPROM 2864 2764 eprom PINOUT
Contextual Info: DS1225Y 64k Nonvolatile SRAM FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles

2864 eeprom

Abstract: 2764 EEPROM EEPROM 2864 CMOS 2764 eprom PINOUT A2A1G
Contextual Info: D S 1225AB/AD DALLAS SEMICONDUCTOR FEATURES DS1225AB/AD 64K Nonvolatile SRAM PIN ASSIGNMENT • 10 years m inim um data retention in the absence of external power NC 1 Al2 • Data is autom atically protected during power loss • Directly replaces 8K x 8 volatile static RAM or

2864 eeprom

Abstract: EEPROM 2864 Ram 2864 2764 EPROM 2864 EPROM 2764 EEPROM 2864 RAM nv sram 8 pin 2764 eprom PINOUT EEPROM 2864 CMOS
Contextual Info: DS1225Y DALLAS DS1225Y SEMICONDUCTOR 6 4 K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 - 1 A12 1 • Data is automatically protected during power loss A7 • Directly replaces 8K x 8 volatile static RAM or EEPROM

Contextual Info: DS1225AB/AD DALLAS SEMICONDUCTOR DS1225AB/AD 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of V cc • Data is automatically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EEPROM NC 1 1 28 1