DS2120 Search Results

DS2118M

Abstract: DS2120A
Contextual Info: DS2120A Ultra3 LVD SCSI Terminator www.dalsemi.com FEATURES PIN ASSIGNMENT Fully compliant with Ultra2, Ultra3, and Ultra 160 LVD-only SCSI Provides Low Voltage Differential termination for 9 signal line pairs Auto-selection of LVD termination 5% tolerance on LVD termination resistance

AN3306

Abstract: LVDS scsi connector ultra3 scsi DS2120 DS2120E DS2125 EIA-644 APP3306
Contextual Info: Maxim > App Notes > INTERFACE CIRCUITS Aug 09, 2004 Keywords: SCSI terminators, termination, Low voltage differential, LVD, terminator APPLICATION NOTE 3306 The Advantages of the DS2120 Low Voltage Differential LVD Device in a SCSI Environment Abstract: This paper describes the differences between SCSI, FAST SCSI, and ULTRA SCSI. It also describes

M R9N

Abstract: transistor r3n DS2118M DS2119M DS2120 DS2120B DS2120E
Contextual Info: DS2120 Ultra3 LVD SCSI Terminator www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT Fully compliant with Ultra3, Ultra160, Ultra320, and Ultra2 LVD only SCSI Provides low-voltage differential (LVD) termination for nine signal line pairs

DS2118M

Abstract: DS2120 DS2120B DS2120E ds2120a
Contextual Info: DS2120 Ultra3 LVD SCSI Terminator www.maxim-ic.com FEATURES PIN CONFIGURATION Fully Compliant with Ultra3, Ultra160, Ultra320, and Ultra2 LVD only SCSI Provides Low-Voltage Differential (LVD) Termination for Nine Signal Line Pairs Zero Temperature Coefficient Termination

KBJ608G bridge rectifier

Abstract: KBJ608G KBJ6005G 608G 608-G bridge rectifier KBJ 606g 6005G E94661 KBJ610G
Contextual Info: KBJ6005G - KBJ610G 6.0A GLASS PASSIVATED BRIDGE RECTIFIER Features • · · · · · Glass Passivated Die Construction · Lead Free Finish, RoHS Compliant Note 4 High Case Dielectric Strength of 1500VRMS KBJ Low Reverse Leakage Current Dim Min Max A 24.80

KBP06G

Abstract: DS21203 E94661 KBP005G KBP01G KBP02G KBP04G KBP08G KBP10G KBP weight
Contextual Info: KBP005G - KBP10G 1.5A GLASS PASSIVATED BRIDGE RECTIFIER SPICE MODELS: KBP005G KBP01G KBP02G KBP04G KBP06G KBP08G KBP10G Features • · · · · · · Glass Passivated Die Construction High Case Dielectric Strength of 1500VRMS Low Reverse Leakage Current Surge Overload Rating to 40A Peak

93LC66A

Abstract: 93LC66B
Contextual Info: 93LC66A/B 4K 2.5V Microwire Serial EEPROM FEATURES BLOCK DIAGRAM • Single supply with operation down to 2.5V • Low power CMOS technology - 1 mA active current typical - 1 µA standby current (maximum) • 512 x 8 bit organization (93LC66A) • 256 x 16 bit organization (93LC66B)

4F256

Abstract: 24LC256 4L256 24lc256 datasheet 24AA256 24FC256 24XX256 G4AD
Contextual Info: 24AA256/24LC256/24FC256 256K I2C CMOS Serial EEPROM Device Selection Table Description Part Number VCC Range Max. Clock Frequency 24AA256 1.8-5.5V 400 kHz 1 I 24LC256 2.5-5.5V 400 kHz I, E 2.5-5.5V 1 MHz I 24FC256 Note 1: The Microchip Technology Inc. 24AA256/24LC256/

25A, 50V BRIDGE-RECTIFIER

Abstract: E94661 GBPC25
Contextual Info: GBPC25005/W - GBPC2510/W 25A GLASS PASSIVATED BRIDGE RECTIFIER Features • · · · · · · · GBPC Glass Passivated Die Construction Diffused Junction Low Reverse Leakage Current Low Power Loss, High Efficiency Surge Overload Rating to 300A Peak Electrically Isolated Metal Base for Maximum

Contextual Info: GBPC25005/W - GBPC2510/W 25A GLASS PASSIVATED BRIDGE RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • • GBPC Glass Passivated Die Construction Diffused Junction Low Reverse Leakage Current Low Power Loss, High Efficiency Surge Overload Rating to 300A Peak

Contextual Info: DF005M - DF10M 1.0A GLASS PASSIVATED BRIDGE RECTIFIERS POWER SEMICONDUCTOR Features • • • • • • • Glass Passivated Die Construction Diffused Junction Low Forward Voltage Drop, High Current Capability Surge Overload Rating to 50A Peak Designed for Printed Circuit Board Applications

Contextual Info: KBJ4005G - KBJ410G 4.0A GLASS PASSIVATED BRIDGE RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • Glass Passivated Die Construction High Case Dielectric Strength of 1500VRMS Low Reverse Leakage Current Surge Overload Rating to 120A Peak Ideal for Printed Circuit Board Applications

200B

Abstract: 24C01C RG41
Contextual Info: 24C01C 1K 5.0V I2C Serial EEPROM FEATURES PDIP/SOIC 1 A1 2 A2 3 Vss 4 8 Vcc 7 TEST 6 SCL 5 SDA TSSOP A0 A1 1 A2 VSS 3 4 24C01C DESCRIPTION The Microchip Technology Inc. 24C01C is a 1K bit Serial Electrically Erasable PROM with a voltage range of 4.5V to 5.5V. The device is organized as a single

606G

Abstract: 6005G 608G E94661 KBJ6005G KBJ610G 610G
Contextual Info: KBJ6005G - KBJ610G 6.0A GLASS PASSIVATED BRIDGE RECTIFIER Features • · · · · · · Glass Passivated Die Construction High Case Dielectric Strength of 1500VRMS Low Reverse Leakage Current Surge Overload Rating to 170A Peak Ideal for Printed Circuit Board Applications

Contextual Info: M 24C02C ic r o c h ip 2K 5.0V I2C Serial EEPROM FEATURES PACKAGETYPES • Single supply with operation from 4.5 to 5.5V • Low power CMOS technology - 1 mA active current typical - 10 nA standby current typical at 5.5V • Organized as a single block of 256 bytes 256 x 8

E94661

Abstract: GBPC15
Contextual Info: GBPC15005/W - GBPC1510/W 15A GLASS PASSIVATED BRIDGE RECTIFIER Features • · · · · · · · GBPC Glass Passivated Die Construction Diffused Junction Low Reverse Leakage Current Low Power Loss, High Efficiency Surge Overload Rating to 300A Peak Electrically Isolated Metal Base for Maximum

93C66A

Abstract: national 93c66A 200B 93C66B RG41
Contextual Info: M 93C66A/B 4K 5.0V Automotive Temperature Microwire Serial EEPROM FEATURES PACKAGE TYPE PDIP CS 1 CLK 2 DI 3 DO 4 93C66A/B • Single supply 5.0V operation • Low power CMOS technology - 1 mA active current typical - 1 µA standby current (maximum) • 512x 8 bit organization (93C66A)

MICROCHIP 93LC56B

Abstract: 93LC56A 93LC56B 93LC56BX
Contextual Info: M 93LC56A/B 2K 2.5V Microwire Serial EEPROM FEATURES BLOCK DIAGRAM • Single supply with operation down to 2.5V • Low power CMOS technology - 1 mA active current typical - 1 µA standby current (maximum) • 256 x 8 bit organization (93LC56A) • 128 x 16 bit organization (93LC56B)

Memory

Abstract: 24XX256 Data Sheet 24AA256 24FC256 24LC256 24XX256 24FC2561
Contextual Info: 24AA256/24LC256/24FC256 256K Bit I2C CMOS Serial EEPROM DEVICE SELECTION TABLE PACKAGE TYPE PDIP Part Number VCC Range Max Clock Frequency 24AA256 1.8-5.5V 400 kHz C 24LC256 2.5-5.5V 400 kHz‡ I, E 24FC256 2.5-5.5V 1 MHz I †100 ‡100 kHz for VCC < 2.5V.

24LC256

Abstract: Reply 21203M G4AD 4F256 4L256 4A256 G4LD 4Ld eeprom 24lc256 datasheet
Contextual Info: 24AA256/24LC256/24FC256 256K I2C CMOS Serial EEPROM Device Selection Table Description Part Number VCC Range Max. Clock Frequency 24AA256 1.8-5.5V 400 kHz 1 I 24LC256 2.5-5.5V 400 kHz I, E 24FC256 1.8-5.5V 1 MHz(2) I Note 1: 2: The Microchip Technology Inc. 24AA256/24LC256/

aa2c

Contextual Info: 24C02C 2K 5.0V I2C Serial EEPROM Features: Description: • Single-Supply with Operation from 4.5V to 5.5V • Low-Power CMOS Technology: - Read current 1 mA, max. - Standby current 5 A, max. • 2-Wire Serial Interface, I2C™ Compatible • Cascadable up to Eight Devices

Contextual Info: M 24C01C ic r o c h ip IK 5.0V I2C Serial EEPROM PACKAGE TYPES FEATURES • Single supply with operation from 4.5 to 5.5V • Low power CMOS technology - 1 mA active current typical - 10 standby current typical at 5.5V • Organized as a single block of 128 bytes 128 x 8

Contextual Info: M ic r o c h ip 93C66A/B 4K 5.0V Microwire Serial EEPROM BLOCK DIAGRAM FEATURES • Single supply 5.0V operation • Low power CMOS technology - 1 mA active current typical - 1 |jA standby current (maximum) 512x 8 bit organization (93C66A) 256x 16 bit organization (93C66B)

OS212

Abstract: national 93c66A
Contextual Info: 93C66A/B M ic r o c h ip 4K 5.0V Automotive Temperature Microwire Serial EEPROM FEATURES • Single supply 5.0V operation • Low power CMOS technology - 1 mA active current typical - 1 (iA standby current (maximum) • 512x8 bit organization (93C66A)