DS6001 Search Results

DRD2360X22

Contextual Info: DRD2360X22 Rectifier Diode DS6001 – 1 March 2011 LN28188 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VRRM IF(AV) IFSM 2200V 2360A 29800A VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VRRM V DRD2360X22 DRD2360X20

Contextual Info: DRD2360X22 Rectifier Diode DS6001 – 1 March 2011 LN28188 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VRRM IF(AV) IFSM 2200V 2360A 29800A VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VRRM V DRD2360X22 DRD2360X20

Contextual Info: DS5001FP DALLAS DS5001FP 128K Micro Chip s e m ic o n d u c t o r FEATURES PIN CONNECTIONS 8 • Enhanced CMOS microcontroller addresses up to 128K of NV SRAM for program/data & 8 ,«• Sfil £, w í o^ Ní ,*• £ ^ N u M < 9 U a < o U O U O J O 0aa.cLscLOZoa<fi

Contextual Info: 27C128 & Microchip _ 128K 16K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120ns Maximum access time • CMOS Technology for low power consumption The Microchip Technology Inc 27C 128 is a CMOS 128K bit (electrically) Programmable Read Only Memory. The

R098C64-25

Abstract: R098C64-20
Contextual Info: R098C64 SALES AND SUPPORT To order or to obtain information, e.g., on pricing or delivery, please use the listed part numbers, and refer to the factory or the listed sales offices. PART NUMBERS R098C64 - 25 I / P J K L P Package: Temperature Range: Access Time:

Contextual Info: MICROCHIP TECHNOLOGY INC ESE D blü3201 0DG47Ô1 4 • <3.-251 27C256 Microchip 256K 32K x 8 CMOS UV Erasable PROM FEATURES DESCRIPTION • High speed performance —150ns maximum access time. • CMOS Technoiogy for low power consumption —20mA Active current

Contextual Info: 27C256 & Microchip 256K 32K x 8 CMOS EPROM DESCRIPTION FEATURES The Microchip Technology Inc 27C256 is a CMOS 256K bit (electrically) Programmable Read Only Memory. The device is organized as 32K words by 8 bits (32K bytes). Accessing individual bytes from an address transition or

Contextual Info: MICROCHIP TECHNOL OGY INC E5E D bl032Gl OGG47fic| Tms-zPi 27C512 Microchip 512K 64K X 8 CMOS UV Erasable PROM FEATURES DESCRIPTION The Microchip Technology Inc 27C512 Is a CMOS 512K bit (ultraviolet light) Erasable (electrically) Program­ mable Read Only Memory. The device is organized into

OT 27C512

Abstract: 27c512 SOIC-28 27C512 microchip
Contextual Info: & 27C512 Microchip _ 512K 64K x 8 CMOS UV Erasable PROM FEATURES DESCRIPTION The Microchip Technology Inc 27C512 is a CMOS 512K • High speed performance bit (ultraviolet light) Erasable (electrically) Program­ — 120ns access time available • CMOS Technology for low power consumption

RF600E

Abstract: circuit diagram for simple IR receiver RF600E-SO RF encoder used in transmitter circuit diagram for simple IR transmitter circuit diagram of rf transmitter and receiver circuit diagram for simple RF transmitter RF MODULE CIRCUIT DIAGRAM Keyfob transmitter pin diagram of ic 4001
Contextual Info: RF / IR Encoder / Decoder Chipset RF Evaluation Boards, • • • • • • • • • • • • • • Highly Secure Protocol RF Encoder & Decoder IC’s Simple to Use Stand Alone Operation Achieves Maximum Range from RF Modules 1 – 4 Switch Options 15 states

maxim 27c64

Abstract: DS60011
Contextual Info: & 27C64 M ic r o c h ip 64K 8K x 8 CMOS UV Erasable PROM FEATURES DESCRIPTION • High speed performance The Microchip Technology Inc 27C64 is a CMOS 64K bit — 120ns maximum access time • CMOS Technology for low power consumption ultraviolet light Erasable (electrically) Programmable

DS60014

Contextual Info: & 27C512 M icro ch ip 512K 64K x 8 CMOS EPROM DESCRIPTION FEATURES The Microchip Technology Inc 27C512 is a CMOS 512K • High speed performance — 120ns access time available • CMOS Technology for low power consumption — 35mA Active current — 100p.A Standby current

Contextual Info: £ R09C256 M ic ro c h ip 256K 32K x 8 CMOS ROM FEATURES DESCRIPTION • High speed performance — 150ns maximum access time • CMOS technology for low power consumption The Microchip Technology Inc R 09C 256 is a CMOS 256K bit Read Only Memory. The device is organized as

diplexer 920

Contextual Info: P/N: C-13/15-FXXM-PX-XXXX/XXX-XX 1310nm Emitting, 1550nm Receiving PIN-TIA,5 pin-out, 3.3V Bi-directional Diplexer Optical Module Features z z z z z z z z z z z z z Single fiber bi-directional operation Laser diode with multi-quantum- well structure Low threshold current

decoder rf600d

Abstract: RF600D-SO8R6 High level Fm transmitter circuit diagram rf solutions DS600
Contextual Info: RF / IR Encoder / Decoder Chipset RF Evaluation Boards, • • • • • • • • • • • • Highly Secure • Compatible with RF Solutions Systems Protocol RF Encoder & Decoder IC’s Simple to Use Stand Alone Operation Achieves Maximum Range from RF Modules

Contextual Info: & 27C128 M icroch ip _ 128K 16K x 8 CMOS UV Erasable PROM FEATURES DESCRIPTION • High speed performance The Microchip Technology lnc27C 128 is a CMOS 128K bit ultraviolet light E rasable (electrically) Programmable — 120ns Maximum access time • CMOS Technology for low power consumption

27C512 eprom

Contextual Info: & R09C512 Microchip 512K 64K x 8 CMOS ROM FEATURES DESCRIPTION • High speed performance — 120ns maximum access time • CMOS technology for low power consumption — 20mA active current — 100nA standby current • Low-cost EPROM replacement • Auto-insertion-compatible plastic packages

Contextual Info: DS5001FP DALLAS SEMICONDUCTOR DS5001FP 128K Soft Micro Chip PIN ASSIGNMENT FEATURES • 8051 compatible uC adapts to its task - 8 8 £ Accesses up to 128K bytes of nonvolatile SRAM In-system programming via on-chip serial port Can modify its own program or data memory

Contextual Info: 27C64 & M icrochip 64K 8K x 8 CMOS EPROM DESCRIPTION FEATURES The Microchip Technology Inc 27C64 is a CMOS 64K bit (electrically) Programmable Read Only Memory. The device is organized as 8K words by 8 bits (8K bytes). Accessing individual bytes from an address transition or

27C128 eprom

Abstract: R09C128
Contextual Info: $ ' R09C128 M ic ro c h ip 128K 16K x 8 CMOS ROM FEATURES DESCRIPTION • High speed performance — 120ns maximum access time • CMOS technology for low power consumption —20mA active current —100|iA standby current • Low-cost EPROM replacement • Auto-insertion-compatible plastic packages