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    DSGM33 Search Results

    DSGM33 Datasheets Context Search

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    Diode 5A

    Abstract: bkd marking TMPD4148 TMPD2835 TMPD2837 TMPD2838 TMPD4150 TMPD4153 TMPD4154 TMPD459
    Contextual Info: AL LE GR O M I C R O S Y S T E M S 8 5 1 4 0 1 9 SP RA GU E. INC T3 D • DSGM33Ô S E M I C O N D S / ICS 0GD3b5? 93 D 0 3 6 2 7 1 *ALGR V T'Q / ~ 9 0 SMALL-OUTLINE DIODES j ‘TMPD’ General-Purpose and Low-Leakage Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C


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    DSGM33Ã TMPD459 TMPD914 TMPD2835 TMP02836 TMPD2837 TMPD2838 TMPD4148 TMPD4153 TMPD4154 Diode 5A bkd marking TMPD4150 PDF

    Contextual Info: m ü M ► t . * - H ^ m * 1 f tm- r'h . r*-*«"* + • *■ + ■*•■- - * » » -. *-# ■ •*- -* 4 r ■■ *• v *■ * —■* r ,«i t. —.1^ * t m* t îd f^ +«•«T-* * j- : *■ r ■* -f * -r -r4' ■l" ^V*' '".’T r


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    A2919SB A2919SLB Q5G433Ã EP-008B 00Q77T5 PDF

    Contextual Info: 26185.50 9-BIT SERIAL-INPUT, LATCHED SINK DRIVER Intended primarily to drive high-current, dot matrix 9- and 24-wire printer solenoids, the UCN5829EB serial-input, latched sink driver provides a complete driver function with a minimum external parts count. Included on chip are constant-frequency PWM current control


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    24-wire UCN5829EB PDF

    A6275EA

    Contextual Info: 8-BIT SERIAL-INPUT, CONSTANTCURRENT LATCHED LED DRIVER The A6275EA and A6275ELW are specifically designed for LEDdisplay applications. Each BiCMOS device includes an 8-bit CMOS shift register, accompanying data latches, and eight npn constantcurrent sink drivers. Except for package style and allowable package


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    A6275EA A6275ELW A6275ELW S0433A 00Cn3bD PDF

    UCN4801

    Contextual Info: w Data Sheet 2 6180.10B 5800AND 5801 BiMOS n LATCHED DRIVERS The U CN5800A/L and U C N 5801A /E P/LW latched-input BiMOS ICs merge high-current, high-voltage outputs with C M O S logic. The C M O S input section consists of 4 or 8 data ‘D ’ type latches with


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    5800AND CN5800A/L UCN5800A 5800L UCN5801A, 5801E 5801L UCN5800L 5Cm33A UCN4801 PDF

    0/k 2897 transistor

    Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 ODOBbTS 3 ■ ALGR T-91-Û1 PROCESS FDB Process FDB PNP High-Power Transistor Process FDB is a PNP silicon double-diffused epi­ taxial planar device designed for use in high-power amplifier and switching circuits. Its NPN complement


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    T-91-Ã DSGM33Ã T-91-01 0/k 2897 transistor PDF